公开(公告)号：US06879469B2

公开(公告)日：2005-04-12

申请号：US10342293

申请日：2003-01-15

申请人： Tzong-Shi Liu ,  Po-Ching Liu ,  Hsing-Cheng Yu

发明人： Tzong-Shi Liu ,  Po-Ching Liu ,  Hsing-Cheng Yu

IPC分类号： G11B5/48 ,  G11B5/56 ,  G11B5/60 ,  G11B21/24 ,  G11B7/08 ,  G11B7/085 ,  G11B7/09 ,  G11B17/00 ,  G11B21/16

CPC分类号： G11B5/6005 ,  G11B5/4833 ,  G11B5/56

摘要： The present invention provides a tuning mechanism for flying pickup heads in data storage devices. The pickup device includes a coil, a pivot, a suspension, and a piezoelectric bender. The piezoelectric bender made by a bi-layer or a multi-layer piezoelectric material is formed on one end of the suspension, and proper voltages applied to the piezoelectric bender via wires enable the piezoelectric bender to undergo both neutral axis displacement and bending deflection. A pickup head is attached to the free end of the piezoelectric bender opposite to the coil, and via the piezoelectric bender, focusing and tracking motion of the pickup head can be tuned at the same time. Furthermore, since the characteristic of the piezoelectric bender is similar to bimetallic elements, the bender can undergo large bending deflection to compensate large deformation of rotating optical disks, so that the flying height of the pickup head can be tuned to maintain a constant focusing distance in reading/writing data.

摘要翻译： 本发明提供一种用于在数据存储装置中飞行拾取头的调谐机构。 拾取装置包括线圈，枢轴，悬架和压电弯曲机。 通过双层或多层压电材料制成的压电弯曲器形成在悬架的一端，并且经由导线施加到压电弯曲机的适当电压使得压电弯曲机能够承受中性轴位移和弯曲偏转。 拾音头连接到与线圈相对的压电弯曲机的自由端，并且通过压电弯曲机可以同时调节拾音头的聚焦和跟踪运动。 此外，由于压电弯曲机的特性类似于双金属元件，所以弯曲机可以经受大的弯曲偏转以补偿旋转光盘的大变形，从而可以调节拾取头的飞行高度以保持恒定的聚焦距离 读/写数据。

公开(公告)号：US5856225A

公开(公告)日：1999-01-05

申请号：US976941

申请日：1997-11-24

申请人： Teck Koon Lee ,  Lap Chan ,  Chock H. Gan ,  Po-Ching Liu

发明人： Teck Koon Lee ,  Lap Chan ,  Chock H. Gan ,  Po-Ching Liu

IPC分类号： H01L21/28 ,  H01L21/336 ,  H01L21/3205 ,  H01L21/4763

CPC分类号： H01L29/66537 ,  H01L29/66545 ,  H01L29/6659 ,  H01L21/28052

摘要： A method of fabricating a MOSFET device, in which a source and drain region has been formed, prior to the formation of an ion implanted channel region, has been developed. The early creation of source and drain region allows a high temperature anneal to be performed, removing damage resulting from the source and drain ion implantation procedures, however without redistribution of channel dopants. The method features creating an opening in an insulator layer, after the source and drain formation, and then forming the channel region in the semiconductor substrate, directly underlying the opening in the insulator layer. A polysilicon gate structure is next formed in the opening, resulting in self-alignment to the underlying channel region.

摘要翻译： 已经开发了在形成离子注入沟道区之前制造其中形成源区和漏区的MOSFET器件的方法。 源极和漏极区域的早期创建允许执行高温退火，消除源极和漏极离子注入过程造成的损伤，然而不会重新分布沟道掺杂剂。 该方法在源极和漏极形成之后在绝缘体层中产生开口，然后在半导体衬底中形成直接位于绝缘体层中的开口下方的沟道区。 随后在开口中形成多晶硅栅结构，导致与底层沟道区的自对准。