公开(公告)号：US06383933B1

公开(公告)日：2002-05-07

申请号：US09534147

申请日：2000-03-23

申请人： Jen Shu ,  Michael E. Thomas ,  Prochy Sethna

发明人： Jen Shu ,  Michael E. Thomas ,  Prochy Sethna

IPC分类号： H01L2100

CPC分类号： H01L21/76819 ,  H01L21/31053 ,  H01L21/31056 ,  H01L21/76229

摘要： A planarization process in which an organic film prevents oxide dishing during the chemical mechanical polishing step. In the planarization process an organic film having high CMP selectivity to silicon dioxide is spun over silicon dioxide. A patterned mask is then placed over the organic film and the exposed portions of the organic film are etched away. The remaining portions of the organic film prevent oxide dishing during chemical mechanical polishing because the high CMP selectivity of the organic film to silicon dioxide stops the etching before oxide dishing occurs. The organic film may then be oxygen ashed off the planarized surface if so desired.

摘要翻译： 在化学机械抛光步骤中有机膜防止氧化物凹陷的平坦化工艺。 在平坦化工艺中，在二氧化硅上旋转对二氧化硅具有高CMP选择性的有机膜。 然后将有图案的掩模放置在有机膜上，并且有机膜的暴露部分被蚀刻掉。 有机膜的剩余部分在化学机械抛光期间防止氧化物凹陷，因为有机膜对二氧化硅的高CMP选择性在氧化物发生脱色之前停止蚀刻。 如果需要，有机膜然后可以是从平坦化表面脱落的氧。