公开(公告)号：US5443863A

公开(公告)日：1995-08-22

申请号：US214795

申请日：1994-03-16

Applicant: William C. Neely ,  William F. Welch ,  Raymond F. Askew

Inventor： William C. Neely ,  William F. Welch ,  Raymond F. Askew

IPC: C04B41/85 ,  C01B13/02 ,  C01B33/12 ,  C04B41/50 ,  C04B41/53 ,  C04B41/87 ,  C04B41/91 ,  C23C8/12 ,  H01L21/316 ,  H01L21/473 ,  B05D3/06

CPC classification number: C04B41/009 ,  C01B13/0203 ,  C04B41/5035 ,  C04B41/5346 ,  C04B41/87 ,  C04B41/91 ,  C23C8/12 ,  H01L21/02164 ,  H01L21/02236 ,  H01L21/02238 ,  H01L21/02252 ,  H01L21/31654 ,  H01L21/473 ,  C04B2111/00844

Abstract: Decomposition of ozone in a microwave discharge cavity leads to formation of highly energetic excited states of atomic oxygen which can efficiently oxidize materials at a temperature far less than that needed for purely thermal oxidation. This technique can be applied to formation of films of silica at the surface of silicon and silicon carbide while maintaining quite moderate surface temperatures, often under 100.degree. C. The technique can be used generally in a process to oxidize materials whose oxidation requires a standard free energy change of less than about +636 kJ/mol.

Abstract translation: 在微波放电腔中分解臭氧导致原子氧的高能激发态的形成，其可以在远低于纯热氧化所需的温度下有效氧化材料。 该技术可用于在硅和碳化硅的表面形成二氧化硅膜，同时保持相当适度的表面温度，通常在100℃以下。该技术通常可用于氧化氧化需要标准自由的材料 能量变化小于约+636 kJ / mol。

公开(公告)号：US3551720A

公开(公告)日：1970-12-29

申请号：US3551720D

申请日：1969-01-28

Applicant: DORWIN K KILBOURN ,  TEDDY J PEACHER ,  RAYMOND F ASKEW ,  WILLIAM D FOSTER

Inventor： KILBOURN DORWIN K ,  PEACHER TEDDY J ,  ASKEW RAYMOND F ,  FOSTER WILLIAM D

IPC: H01J5/30 ,  H01J61/36 ,  H05B31/00

CPC classification number: H05B31/0021 ,  H01J5/30 ,  H01J61/36 ,  H01J2893/0045