公开(公告)号：US12054425B2

公开(公告)日：2024-08-06

申请号：US18099460

申请日：2023-01-20

申请人： SIKA TECHNOLOGY AG

发明人： Dario Caviezel ,  Wolf-Rüdiger Huck ,  Herbert Ackermann

IPC分类号： C04B24/26 ,  B28B3/22 ,  B29C43/24 ,  B29K23/00 ,  C04B28/04 ,  C04B41/00 ,  C04B41/53 ,  C04B41/72 ,  C04B103/40 ,  C04B111/27

CPC分类号： C04B24/2635 ,  B28B3/22 ,  C04B28/04 ,  C04B41/009 ,  C04B41/5346 ,  C04B41/72 ,  B29C43/24 ,  B29C2793/009 ,  B29K2023/0625 ,  B29K2023/083 ,  C04B2103/40 ,  C04B2111/27

摘要： A waterproofing system including a functional layer S1 including 10-80 wt.-% of at least one thermoplastic polymer P1 and 10-80 wt.-% of at least one solid particulate filler F, wherein the surface of the functional layer S1 has an Auto-correlation length of waviness W(Sal) of at least 50 μm. Further, a method for producing a waterproofing system and to the use of a mechanical surface treatment step to increase the waviness factor, determined as the ratio of the Root mean square roughness of waviness W(Sq) to the square of the Auto-correlation length of waviness W(Sal), of a surface of a functional layer S1.

公开(公告)号：US20240092702A1

公开(公告)日：2024-03-21

申请号：US18039474

申请日：2021-11-25

申请人： BEIHANG UNIVERSITY

发明人： Shubin Yang ,  Zhiguo Du

IPC分类号： C04B41/53 ,  H01J37/32

CPC分类号： C04B41/5346 ,  H01J37/3244 ,  H01J2237/3341

摘要： Provided are a method and system for preparing a two-dimensional material by means of a gas-phase method. The method comprises a gas-phase etching step: reacting gas having an etching effect with an MAX phase material at a first predetermined temperature, and etching a component A in the MAX phase material to obtain a two-dimensional material containing MX. The method avoids requiring the steps such as repeated cleaning, ultrasonic and centrifugal separation, and drying in preparing MXene in a liquid-phase method, greatly simplifies a preparation process, reduces the preparation cost, can achieve industrial macro preparation of MXene, and lays a foundation for application of MXene in different fields.

公开(公告)号：US20230150875A1

公开(公告)日：2023-05-18

申请号：US18099460

申请日：2023-01-20

申请人： SIKA TECHNOLOGY AG

发明人： Dario CAVIEZEL ,  Wolf-Rüdiger HUCK ,  Herbert ACKERMANN

IPC分类号： C04B24/26 ,  B28B3/22 ,  C04B28/04 ,  C04B41/00 ,  C04B41/53 ,  C04B41/72

CPC分类号： C04B24/2635 ,  B28B3/22 ,  C04B28/04 ,  C04B41/009 ,  C04B41/5346 ,  C04B41/72 ,  B29C43/24

摘要： A waterproofing system including a functional layer S1 including 10-80 wt.-% of at least one thermoplastic polymer P1 and 10-80 wt.-% of at least one solid particulate filler F, wherein the surface of the functional layer S1 has an Auto-correlation length of waviness W(Sal) of at least 50 μm. Further, a method for producing a waterproofing system and to the use of a mechanical surface treatment step to increase the waviness factor, determined as the ratio of the Root mean square roughness of waviness W(Sq) to the square of the Auto-correlation length of waviness W(Sal), of a surface of a functional layer S1.

公开(公告)号：US20150321966A1

公开(公告)日：2015-11-12

申请号：US14652210

申请日：2014-01-28

申请人： TOYO TANSO CO., LTD.

发明人： Masato Shinohara

IPC分类号： C04B41/89 ,  C04B35/52 ,  C04B41/50

CPC分类号： C04B41/89 ,  C04B35/522 ,  C04B41/00 ,  C04B41/009 ,  C04B41/4529 ,  C04B41/5059 ,  C04B41/5061 ,  C04B41/52 ,  C04B41/53 ,  C23C16/4581 ,  C30B29/36 ,  C30B35/00 ,  H01L21/683 ,  H01L21/68757 ,  Y10T428/24612 ,  Y10T428/265 ,  Y10T428/30 ,  C04B41/4531 ,  C04B41/4519 ,  C04B41/5001 ,  C04B41/5346 ,  C04B41/455 ,  C04B41/5057

摘要： Provided is a silicon carbide-tantalum carbide composite having excellent durability. A silicon carbide-tantalum carbide composite (1) includes: a body (10) whose surface layer is at least partly formed of a first silicon carbide layer (12); a tantalum carbide layer (20); and a second silicon carbide layer (13). The tantalum carbide layer (20) is disposed over the first silicon carbide layer (12). The second silicon carbide layer (13) is interposed between the tantalum carbide layer (20) and the first silicon carbide layer (12). The second silicon carbide layer (13) has a C/Si composition ratio of not less than 1.2 as measured by X-ray photoelectron spectroscopy. The second silicon carbide layer (13) has a peak intensity ratio G/D of not less than 1.0 between the G-band and D-band of carbon as measured by Raman spectroscopy.

摘要翻译： 提供了具有优异的耐久性的碳化硅 - 碳化钽复合材料。 碳化硅 - 碳化钽复合材料（1）包括：其表面层至少部分地由第一碳化硅层（12）形成的主体（10）; 碳化钽层（20）; 和第二碳化硅层（13）。 碳化钽层（20）设置在第一碳化硅层（12）的上方。 第二碳化硅层（13）介于碳化钽层（20）和第一碳化硅层（12）之间。 通过X射线光电子能谱测定，第二碳化硅层（13）的C / Si组成比不小于1.2。 通过拉曼光谱测定，第二碳化硅层（13）的G带和D带之间的峰值强度比G / D不小于1.0。

公开(公告)号：US08569175B2

公开(公告)日：2013-10-29

申请号：US12096271

申请日：2006-12-06

申请人： Stefan Reber ,  Gerhard Willeke

发明人： Stefan Reber ,  Gerhard Willeke

IPC分类号： H01L21/302

CPC分类号： C04B41/91 ,  C03C15/00 ,  C04B41/009 ,  C04B41/5346 ,  H01L21/02046 ,  H01L21/3221 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521 ,  Y10T428/24479 ,  C04B35/00 ,  C04B35/16 ,  C04B35/185 ,  C04B35/58 ,  C04B35/56

摘要： The invention relates to a method for dry chemical treatment of substrates selected from the group comprising silicon, ceramic, glass, and quartz glass, in which the substrate is treated in a heated reaction chamber with a gas which contains hydrogen chloride as etching agent, and also to a substrate which can be produced in this way. The invention likewise relates to uses of the previously mentioned method.

摘要翻译： 本发明涉及一种用于干燥化学处理的方法，所述方法选自硅，陶瓷，玻璃和石英玻璃，其中基板在加热的反应室中用含有氯化氢作为蚀刻剂的气体进行处理，以及 也可以以这种方式生产的基底。 本发明同样涉及前述方法的用途。

公开(公告)号：US20090011065A1

公开(公告)日：2009-01-08

申请号：US11659109

申请日：2006-05-23

申请人： Hideo Nakagawa ,  Masaru Sasago ,  Tomoyasu Murakami

发明人： Hideo Nakagawa ,  Masaru Sasago ,  Tomoyasu Murakami

IPC分类号： B23K10/00 ,  B44C1/22

CPC分类号： C03B11/082 ,  B81C1/00531 ,  B81C2201/0143 ,  C03B11/084 ,  C03B2215/07 ,  C03B2215/412 ,  C04B41/009 ,  C04B41/5346 ,  C04B41/91 ,  C23F4/00 ,  G02B6/136 ,  Y02P40/57 ,  C04B41/0054 ,  C04B35/56

摘要： A WC substrate 7 is etched by using plasma 50 generated from a gas including a chlorine atom.

摘要翻译： 通过使用由包括氯原子的气体产生的等离子体50来蚀刻WC衬底7。

公开(公告)号：US06830780B2

公开(公告)日：2004-12-14

申请号：US09965478

申请日：2001-09-27

申请人： Ronald Petkie

发明人： Ronald Petkie

IPC分类号： C23C1606

CPC分类号： C04B41/89 ,  B23K35/001 ,  B32B2311/12 ,  B32B2311/30 ,  C04B35/52 ,  C04B37/006 ,  C04B37/026 ,  C04B41/009 ,  C04B41/52 ,  C04B2111/00844 ,  C04B2235/427 ,  C04B2237/122 ,  C04B2237/124 ,  C04B2237/125 ,  C04B2237/363 ,  C04B2237/403 ,  C04B2237/406 ,  C04B2237/407 ,  C04B2237/72 ,  H01L23/3732 ,  H01L24/29 ,  H01L24/83 ,  H01L2224/29111 ,  H01L2224/8319 ,  H01L2224/8385 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01011 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01018 ,  H01L2924/01019 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01041 ,  H01L2924/01042 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/0132 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/07802 ,  H01L2924/10329 ,  H01L2924/12042 ,  H01L2924/351 ,  Y10T428/265 ,  Y10T428/30 ,  C04B41/4529 ,  C04B41/5133 ,  C04B41/524 ,  C04B41/5127 ,  C04B41/5116 ,  C04B41/522 ,  C04B41/4501 ,  C04B41/4523 ,  C04B41/0072 ,  C04B41/5346 ,  C04B41/5105 ,  H01L2924/01022 ,  H01L2924/01026 ,  H01L2924/01028 ,  H01L2924/3512 ,  H01L2924/00 ,  H01L2924/00015

摘要： A multilayer brazeable metallization structure for diamond components and method for producing it are described. The brazeable metallization finds particular application for the attachment of diamond components such as heat spreaders in electronic packages that incorporate high power semiconductor devices. In the present invention, a diamond component is provided with a multilayer coating of metals including depositing a first layer of chromium for adhesion onto at least a portion of the diamond component, depositing a second barrier layer of a refractory metal for a barrier onto at least portion of the chromium layer, and a top layer of copper, silver or gold for wetting. This top layer is thick (greater than 5 microns), without sacrificing resistance to delamination, particularly at brazing conditions. It is obtained by depositing a layer of a first metal onto at least a portion of the refractory metal layer, and depositing a layer of a second metal onto at least a portion of the first metal layer. The refractory metals for the barrier layer include tungsten, molybdenum, tantalum, niobium, or tungsten-chromium alloy. This multilayer metallization structure provides a robust interface between diamond and standard brazing alloys which are used to join the diamond to electrical leads or a flange made of metals such as copper-tungsten. The interfacial adhesion between the metallization and the diamond is sufficient to withstand exposure to brazing at temperatures less than or equal to 1,100° C. in inert gas atmospheres that may contain hydrogen.

摘要翻译： 描述了用于金刚石组件的多层可钎焊金属化结构及其制造方法。 可钎焊金属化特别适用于将金属部件如散热器安装在并入大功率半导体器件的电子封装中。 在本发明中，金刚石组件设置有金属的多层涂层，包括沉积第一层铬以粘附在至少一部分金刚石组件上，至少将至少一层阻挡层的难熔金属的第二阻挡层沉积 铬层的一部分，以及用于润湿的铜，银或金的顶层。 该顶层是厚的（大于5微米），而不会牺牲耐分层性，特别是在钎焊条件下。 通过在第一金属层的至少一部分上沉积第一金属层并在第一金属层的至少一部分上沉积第二金属层而获得。 用于阻挡层的难熔金属包括钨，钼，钽，铌或钨 - 铬合金。 这种多层金属化结构提供了金刚石和标准钎焊合金之间的牢固界面，这些钎焊合金用于将金刚石连接到电引线或由诸如铜 - 钨的金属制成的凸缘。 金属化和金刚石之间的界面粘合足以在低于或等于1100℃的温度下耐受暴露于可能含有氢的惰性气体气氛中的钎焊。

公开(公告)号：US20040057153A1

公开(公告)日：2004-03-25

申请号：US10444133

申请日：2003-05-23

发明人： Taisuke Hirooka

IPC分类号： G11B005/127

CPC分类号： G11B5/3173 ,  C04B35/117 ,  C04B41/009 ,  C04B41/5346 ,  C04B41/91 ,  C04B2235/3843 ,  C04B2235/5436 ,  C04B2235/5445 ,  C04B2235/945 ,  C04B2235/963 ,  G11B5/102 ,  G11B5/3106 ,  G11B5/3166 ,  C04B35/10 ,  C04B35/5611 ,  C04B41/0054

摘要： A method of marking a sintered body includes the step of preparing the sintered body by sintering a mixture of first and second types of powder particles. The first type of powder particles is made of a first material and the second type of powder particles is made of a second material that has a different etch susceptibility from the first material. The method further includes the step of writing ID information on the surface of the sintered body by forming a first concave region to a depth of at least about 10 nm under the surface of the sintered body and a second concave region under the first concave region, respectively. The first concave region is formed by etching away both the first and second types of powder particles, while the second concave region is formed by etching away only the first type of powder particles.

摘要翻译： 标记烧结体的方法包括通过烧结第一种和第二种粉末颗粒的混合物来制备烧结体的步骤。 第一种类型的粉末颗粒由第一种材料制成，第二类型的粉末颗粒由与第一种材料具有不同蚀刻敏感性的第二种材料制成。 该方法还包括通过在烧结体的表面上形成至少约10nm的深度的第一凹部区域和在第一凹部区域下方的第二凹部区域，在烧结体的表面上书写ID信息的步骤， 分别。 通过蚀刻掉第一和第二类型的粉末颗粒而形成第一凹入区域，而通过仅蚀刻掉第一类型的粉末颗粒来形成第二凹入区域。

公开(公告)号：US06599461B1

公开(公告)日：2003-07-29

申请号：US09403325

申请日：1999-12-07

申请人： Thomas Sievers ,  Günter Wiedemann

发明人： Thomas Sievers ,  Günter Wiedemann

IPC分类号： B23K2600

CPC分类号： B28D1/00 ,  B23K26/0006 ,  B23K26/352 ,  B23K26/354 ,  B23K2103/50 ,  B23K2103/52 ,  B28B11/04 ,  B28B11/0818 ,  B28B11/0872 ,  C04B41/009 ,  C04B41/53 ,  C04B41/91 ,  C04B2111/00362 ,  C04B2111/60 ,  E04F15/02 ,  C04B41/0036 ,  C04B41/5346 ,  C04B41/5353 ,  C04B33/00 ,  C04B14/00 ,  C04B14/048

摘要： The invention relates to a method of manufacturing non-slip floor coverings made of mineral materials, such as, for example, natural stone, fine stoneware, artificial stone or ceramics. This method is carried out in a two-stage process, there being produced on the surface of the floor coverings or slabs, in a first process stage by means of pulsed laser bombardment, statistically distributed microcraters invisible to the human eye. The surface of the floor coverings or slabs obtained in this way is then, according to the invention, subjected to hydromechanical aftertreatment.

摘要翻译： 本发明涉及一种制造由矿物材料制成的防滑地板覆盖物的方法，例如天然石，细st石，人造石或陶瓷。 该方法是通过脉冲激光轰击，对人眼不可见的统计分布的微观层，在第一工艺阶段中在地板覆盖物或板坯的表面上产生的两阶段工艺。 然后按照本发明获得的地板覆盖物或板坯的表面进行液压机械后处理。

公开(公告)号：US06579833B1

公开(公告)日：2003-06-17

申请号：US09568312

申请日：2000-05-09

申请人： Michael J. McNallan ,  Daniel Ersoy ,  Yury Gogotsi

发明人： Michael J. McNallan ,  Daniel Ersoy ,  Yury Gogotsi

IPC分类号： C10M10302

CPC分类号： C04B35/62839 ,  A61F2/30767 ,  A61F2/32 ,  A61F2/34 ,  A61F2/36 ,  A61F2/38 ,  A61F2/3804 ,  A61F2/3845 ,  A61F2/3859 ,  A61F2/3877 ,  A61F2/389 ,  A61F2/40 ,  A61F2/4059 ,  A61F2/4081 ,  A61F2/4241 ,  A61F2/4261 ,  A61F2002/30253 ,  A61F2002/30301 ,  A61F2002/30626 ,  A61F2002/30649 ,  A61F2002/30685 ,  A61F2002/30878 ,  A61F2002/30892 ,  A61F2002/30925 ,  A61F2002/30957 ,  A61F2002/3611 ,  A61F2002/4018 ,  A61F2002/4258 ,  A61F2002/4271 ,  A61F2002/4631 ,  A61F2230/0076 ,  A61F2230/0095 ,  A61F2310/00269 ,  A61F2310/00281 ,  A61F2310/00574 ,  A61F2310/0058 ,  A61F2310/00586 ,  A61L27/303 ,  B01J3/065 ,  B01J21/18 ,  B01J27/22 ,  B01J37/24 ,  B01J2203/0655 ,  C04B35/62884 ,  C04B35/62897 ,  C04B41/009 ,  C04B41/5001 ,  C04B41/5002 ,  C04B41/5346 ,  C04B41/85 ,  C04B41/91 ,  C04B2111/00353 ,  C04B2111/0081 ,  C04B2111/00836 ,  C04B2111/94 ,  C04B2235/3826 ,  C04B2235/383 ,  C04B2235/3834 ,  F16C11/0619 ,  F16C33/043 ,  F16C33/16 ,  F16C33/30 ,  C04B41/4519 ,  C04B41/4556 ,  C04B35/565

摘要： A process for the synthesis of carbon coatings on the surface of metal carbides, preferably SiC, by etching in a halogen-containing gaseous etchant, and optionally hydrogen gas, leading to (he formation of a carbon layer on the metal carbide. The reaction is performed in gas mixtures containing about 0% (trace) amounts to 100% halogen-containing gaseous etchant, e.g., Cl2, and about 0% to 99.9% H2 (hydrogen gas) at temperatures from about 100° C. to about 4,000° C., preferably about 800° C. to about 1,200° C., over any time range, maintaining a pressure of preferably about one atmosphere, to about 100 atmospheres.

摘要翻译： 通过在含卤素的气体蚀刻剂和任选的氢气中蚀刻，在金属碳化物，优选SiC的表面上合成碳涂层的方法，导致（在金属碳化物上形成碳层，反应是 在约100℃至约4,000℃的温度下，含有约0％（痕量）至100％含卤素气体蚀刻剂（例如Cl 2）和约0％至99.9％H 2（氢气）的气体混合物 优选约800℃至约1200℃，在任何时间范围内，保持优选约一个大气压至约100个大气压。