公开(公告)号：US20180362726A1

公开(公告)日：2018-12-20

申请号：US15736920

申请日：2016-06-16

Applicant: SAINT-GOBAIN CENTRE DE RECHERCHES ET D'ETUDES EUROPEEN

Inventor： Nabil NAHAS ,  Elodie BAHON ,  Yves BOUSSANT-ROUX

IPC: C08K3/38 ,  C01B21/064 ,  C08K9/08 ,  C09K5/14

CPC classification number: C08K3/38 ,  C01B21/064 ,  C01B21/0648 ,  C01P2002/76 ,  C01P2004/32 ,  C01P2004/50 ,  C01P2004/60 ,  C01P2006/10 ,  C01P2006/16 ,  C01P2006/80 ,  C01P2006/90 ,  C04B26/04 ,  C04B26/08 ,  C04B26/10 ,  C04B26/32 ,  C04B35/583 ,  C04B35/6261 ,  C04B35/6262 ,  C04B35/6268 ,  C04B35/62695 ,  C04B38/009 ,  C04B2111/00465 ,  C04B2111/00844 ,  C04B2235/386 ,  C04B2235/528 ,  C04B2235/5427 ,  C04B2235/5436 ,  C04B2235/608 ,  C04B2235/72 ,  C04B2235/728 ,  C04B2235/767 ,  C08K9/08 ,  C08K2003/385 ,  C08K2201/001 ,  C08K2201/002 ,  C09K5/14 ,  C04B14/327 ,  C04B20/002 ,  C04B2103/0041 ,  C04B38/0054 ,  C04B38/0058

Abstract: A powder essentially composed of aggregates based on boron nitride, the powder exhibiting an overall chemical composition, as percentages by weight, including between 40 and 45% of boron, between 53 and 57% of nitrogen, less than 400 ppm by weight of calcium, less than 5%, in total, of other elements and more than 90% of boron nitride, limit included, as percentage by weight and on the basis of the combined crystalline phases, a mean circularity of greater than or equal to 0.90, a median pore size of less than or equal to 1.5 μm and an apparent porosity of less than or equal to 55%.

公开(公告)号：US20180148623A1

公开(公告)日：2018-05-31

申请号：US15824158

申请日：2017-11-28

Applicant: Infineon Technologies AG

Inventor： Alexander Roth

IPC: C09K5/14 ,  C08K3/38 ,  C08J5/24 ,  B29C71/02

CPC classification number: C09K5/14 ,  C04B41/009 ,  C04B41/4853 ,  C04B41/4961 ,  C04B41/83 ,  C04B41/84 ,  C04B2111/00844 ,  C08J5/24 ,  C08J7/08 ,  C08J2363/00 ,  C08J2383/04 ,  C08K3/38 ,  C08K2003/385 ,  C08K2201/001 ,  H01L23/3737 ,  C04B35/583 ,  C04B38/06

Abstract: A resin-impregnated boron nitride body includes a polymer-derived boron nitride and a resin. A process for manufacturing such a resin-impregnated boron nitride body includes: polymerizing a boron nitride molecular precursor into a preceramic polymer shaping the preceramic polymer to form an infusible polymer body; submitting the polymer body to a thermal treatment to obtain a boron nitride body; impregnating the boron nitride body with a resin; and curing the resin.

公开(公告)号：US20180025919A1

公开(公告)日：2018-01-25

申请号：US15535627

申请日：2015-12-10

Applicant: DENKA COMPANY LIMITED

Inventor： Takeshi MIYAKAWA ,  Daisuke GOTO

IPC: H01L21/48 ,  B28B11/24 ,  H01L23/373 ,  C04B38/06 ,  C04B41/88 ,  B28B1/14 ,  C04B35/565

CPC classification number: H01L21/4807 ,  B22D19/16 ,  B22D21/007 ,  B22F2999/00 ,  B28B1/14 ,  B28B11/243 ,  C04B35/565 ,  C04B35/6263 ,  C04B35/63432 ,  C04B35/63488 ,  C04B38/06 ,  C04B41/009 ,  C04B41/5155 ,  C04B41/88 ,  C04B2111/00844 ,  C04B2235/3418 ,  C04B2235/3826 ,  C04B2235/402 ,  C04B2235/5436 ,  C04B2235/5472 ,  C04B2235/602 ,  C04B2235/6027 ,  C04B2235/606 ,  C04B2235/61 ,  C04B2235/616 ,  C04B2235/9607 ,  C22C1/1015 ,  C22C29/065 ,  H01L23/3731 ,  H01L2924/0002 ,  H01L2924/00 ,  C04B38/00 ,  C04B41/4521 ,  C04B41/4523 ,  C22C2001/1021 ,  B22F3/26

Abstract: A silicon carbide composite that is lightweight and has high thermal conductivity as well as a low thermal expansion coefficient close to that of a ceramic substrate, particularly a silicon carbide composite material suitable for heat dissipating components that are required to be particularly free of warping, such as heat sinks. A method for manufacturing a silicon carbide composite obtained by impregnating a porous silicon carbide molded body with a metal having aluminum as a main component, wherein the method for manufacturing a silicon carbide composite material is characterized in that the porous silicon carbide molded article is formed by a wet molding method, and preferably the wet molding method is a wet press method or is a wet casting method.

公开(公告)号：US20170043423A1

公开(公告)日：2017-02-16

申请号：US15304101

申请日：2015-04-01

Applicant: TOYO TANSO CO., LTD.

Inventor： Masao Kanda ,  Naoto Ohta ,  Kiyoshi Saito ,  Masaki Okada ,  Motoki Onishi ,  Takeyuki Namiki

IPC: B23H1/06 ,  B23H9/00 ,  C04B41/51 ,  C04B41/53 ,  C04B41/00

CPC classification number: B23H1/06 ,  B23H9/006 ,  C04B41/009 ,  C04B41/5127 ,  C04B41/5384 ,  C04B41/88 ,  C04B2111/00844 ,  C04B2111/94 ,  C04B35/522 ,  C04B38/00 ,  C04B41/4521 ,  C04B41/4523

Abstract: An object is to provide a graphite-copper composite electrode material that is capable of reducing electrode wear to a practically usable level and to provide an electrical discharge machining electrode using the material. A graphite-copper composite electrode material includes a substrate comprising a graphite material and having pores, and copper impregnated in the pores of the substrate, the electrode material having an electrical resistivity of 2.5 μΩm or less, preferably 1.5 μΩm or less, more preferably 1.0 μΩm or less. It is desirable that the substrate comprising the graphite material have an anisotropy ratio of 1.2 or less. It is desirable that an impregnation rate φ of the copper in the electrode material is 13% or greater. It is desirable that the substrate comprising the graphite material have a bulk density of from 1.40 Mg/m3 to 1.85 Mg/m3.

Abstract translation: 本发明的目的是提供一种能够将电极磨损降低到实际可用水平并提供使用该材料的放电加工电极的石墨 - 铜复合电极材料。 石墨 - 铜复合电极材料包括包含石墨材料并具有孔隙的基底和浸渍在基底孔中的铜，所述电极材料的电阻率为2.5μΩm以下，优选为1.5μΩm以下，更优选为1.0 μΩm以下。 希望包含石墨材料的基材的各向异性比为1.2以下。 希望电极材料中的铜的浸渍率φ为13％以上。 希望包含石墨材料的基材的堆积密度为1.40Mg / m 3至1.85Mg / m 3。

公开(公告)号：US09424968B2

公开(公告)日：2016-08-23

申请号：US13351722

申请日：2012-01-17

Applicant: Tomokazu Ishikura ,  Michihiro Muramoto ,  Akihiro Harada ,  Katsumi Kawasaki ,  Tomofumi Kuroda

Inventor： Tomokazu Ishikura ,  Michihiro Muramoto ,  Akihiro Harada ,  Katsumi Kawasaki ,  Tomofumi Kuroda

IPC: H01Q13/00 ,  C04B35/00 ,  B05D5/12 ,  H01F1/10 ,  H01Q1/24 ,  H01Q1/36 ,  H01Q5/00 ,  H01Q9/42 ,  C04B35/26 ,  C04B35/626 ,  C04B38/00 ,  C04B111/00

CPC classification number: H01F1/10 ,  C04B35/2633 ,  C04B35/2641 ,  C04B35/2683 ,  C04B35/62685 ,  C04B38/00 ,  C04B2111/00844 ,  C04B2235/3206 ,  C04B2235/3208 ,  C04B2235/3213 ,  C04B2235/3215 ,  C04B2235/3217 ,  C04B2235/3224 ,  C04B2235/3232 ,  C04B2235/3241 ,  C04B2235/3244 ,  C04B2235/3263 ,  C04B2235/3272 ,  C04B2235/3275 ,  C04B2235/3279 ,  C04B2235/3281 ,  C04B2235/3284 ,  C04B2235/3286 ,  C04B2235/3293 ,  C04B2235/3298 ,  C04B2235/3418 ,  C04B2235/767 ,  C04B2235/786 ,  H01Q1/243 ,  H01Q1/364 ,  H01Q5/00 ,  H01Q9/42 ,  C04B35/26

Abstract: A magnetic material for antennas including: an M-type hexagonal ferrite represented by the following general formula (1) as a main phase, MA.Fe12-x.MBx.O19 (wherein MA is at least one kind selected from the group consisting of Sr and Ba, MB is MC or MD, MC is at least one kind selected from the group consisting of Al, Cr, Sc and In, MD is an equivalent mixture of at least one kind selected from the group consisting of Ti, Sn and Zr and at least one kind selected from the group consisting of Ni, Zn, Mn, Mg, Cu and Co, X is a number from 1 to 5), and an average crystal particle diameter is equal to or greater than 5 μm.

Abstract translation: 一种用于天线的磁性材料，包括：作为主相的由以下通式（1）表示的M型六方晶系铁氧体：MA.Fe12-x.MBx.O19（其中MA是选自以下的至少一种： Sr和Ba，MB是MC或MD，MC是选自Al，Cr，Sc和In中的至少一种，MD是选自Ti，Sn和 Zr和选自Ni，Zn，Mn，Mg，Cu和Co中的至少一种，X为1至5的数），平均晶体粒径等于或大于5μm。

公开(公告)号：US20160190420A1

公开(公告)日：2016-06-30

申请号：US14971337

申请日：2015-12-16

Applicant: Alphabet Energy, Inc.

Inventor： Lindsay Miller ,  John P. Reifenberg ,  Douglas Crane ,  Adam Lorimer ,  Mario Aguirre ,  Jordan Chase ,  Matthew L. Scullin

IPC: H01L35/32 ,  H01L35/16

CPC classification number: H01L35/32 ,  C04B35/547 ,  C04B41/009 ,  C04B41/52 ,  C04B41/90 ,  C04B2111/00844 ,  C04B2235/3279 ,  C04B2235/3281 ,  C04B2235/3284 ,  C04B2235/3294 ,  C04B2235/446 ,  H01L35/04 ,  H01L35/16 ,  C04B41/5133 ,  C04B41/5144 ,  C04B41/5116

Abstract: Under one aspect, a structure includes a tetrahedrite substrate; a first contact metal layer disposed over and in direct contact with the tetrahedrite substrate; and a second contact metal layer disposed over the first contact metal layer. A thermoelectric device can include such a structure. Under another aspect, a method includes providing a tetrahedrite substrate; disposing a first contact metal layer over and in direct contact with the tetrahedrite substrate; and disposing a second contact metal layer over the first contact metal layer. A method of making a thermoelectric device can include such a method.

Abstract translation: 在一个方面，一种结构包括四面体衬底; 设置在所述四面体基板上并与所述四面体基板直接接触的第一接触金属层; 以及设置在所述第一接触金属层上的第二接触金属层。 热电装置可以包括这种结构。 另一方面，一种方法包括提供四面体衬底; 将第一接触金属层设置在四面体衬底上并与其直接接触; 以及在所述第一接触金属层上设置第二接触金属层。 制造热电装置的方法可以包括这种方法。

公开(公告)号：US20160130187A1

公开(公告)日：2016-05-12

申请号：US14895469

申请日：2014-06-02

Applicant: DENKA COMPANY LIMITED

Inventor： Koki Ikarashi ,  Shuhei Nonaka ,  Toshikatsu Mitsunaga ,  Hideki Hirotsuru ,  Mitsuru Shiiba

IPC: C04B35/583 ,  C04B41/00 ,  C04B41/49 ,  C04B41/48

CPC classification number: C04B41/84 ,  C04B35/583 ,  C04B41/009 ,  C04B41/48 ,  C04B41/4853 ,  C04B41/4905 ,  C04B41/4961 ,  C04B41/83 ,  C04B2111/00844 ,  C04B2235/3208 ,  C04B2235/386 ,  C04B2235/3895 ,  C04B2235/5292 ,  C04B2235/5436 ,  C04B2235/5472 ,  C04B2235/787 ,  C04B2235/9607 ,  H01L23/145 ,  H01L23/3737 ,  H01L2924/0002 ,  H05K1/0373 ,  H05K2201/0209 ,  H01L2924/00 ,  C04B38/00

Abstract: A resin-impregnated boron nitride sintered body having superior thermal conductivity and superior strength, and a resin-impregnated boron nitride sintered body having superior conductivity and small anisotropy of thermal conductivity are provided. A resin-impregnated boron nitride sintered body, including: 30 to 90 volume % of a boron nitride sintered body having boron nitride particles bonded three-dimensionally; and 10 to 70 volume % of a resin; wherein the boron nitride sintered body has a porosity of 10 to 70%; the boron nitride particles of the boron nitride sintered body has an average long diameter of 10 μm or more; the boron nitride sintered body has a graphitization index by powder X-ray diffractometry is 4.0 or less; and an orientation degree of the boron nitride particles of the boron nitride sintered body by I.O.P is 0.01 to 0.05 or 20 to 100; and a resin-impregnated boron nitride sintered body, including: 30 to 90 volume % of a boron nitride sintered body having boron nitride particles bonded three-dimensionally is provided.

Abstract translation: 提供具有优良导热性和优异强度的树脂浸渍氮化硼烧结体，以及具有优异导电性和小导热性各向异性的树脂浸渍氮化硼烧结体。 一种树脂浸渍氮化硼烧结体，其包括：三维结合氮化硼颗粒的氮化硼烧结体的30〜90体积％ 和10〜70体积％的树脂; 其中，所述氮化硼烧结体的孔隙率为10〜70％。 氮化硼烧结体的氮化硼粒子的平均长径为10μm以上， 氮化硼烧结体的粉末X射线衍射法的石墨化指数为4.0以下; 氮化硼烧结体的氮化硼粒子的取向度为0.01〜0.05或20〜100; 和树脂浸渍的氮化硼烧结体，其包括：三维结合氮化硼颗粒的氮化硼烧结体的30〜90体积％。

公开(公告)号：US09301390B2

公开(公告)日：2016-03-29

申请号：US13258185

申请日：2010-03-29

Applicant: Naoto Takahashi ,  Yuichiro Minabe

Inventor： Naoto Takahashi ,  Yuichiro Minabe

IPC: H05K1/09 ,  C23C18/06 ,  C23C18/08 ,  C04B41/52 ,  H01L23/498 ,  C04B41/00 ,  C04B41/90 ,  C04B111/00

CPC classification number: H05K1/092 ,  C04B41/009 ,  C04B41/52 ,  C04B41/90 ,  C04B2111/00844 ,  C23C18/06 ,  C23C18/08 ,  H01L23/498 ,  H01L23/49883 ,  H01L2924/0002 ,  Y10T428/24612 ,  C04B41/4556 ,  C04B41/5068 ,  C04B41/4539 ,  C04B41/4547 ,  C04B41/5116 ,  C04B41/5127 ,  C04B41/5133 ,  C04B35/58 ,  C04B35/581 ,  H01L2924/00

Abstract: The present invention provides a process for producing a metalized substrate in which a predetermined metal paste composition is applied onto a sintered nitride ceramic substrate (10); the resultant is fired in a heat-resistant container at a predetermined condition; and the substrate (10) and a metal layer (30) are bonded together to each other through a titanium nitride layer (20).

Abstract translation: 本发明提供一种金属化基板的制造方法，其中将预定的金属浆料组合物施加到氮化物烧结陶瓷基板（10）上; 将所得物在预定条件下在耐热容器中烧制; 并且基板（10）和金属层（30）通过氮化钛层（20）彼此结合在一起。

公开(公告)号：US09107308B2

公开(公告)日：2015-08-11

申请号：US14380981

申请日：2013-02-26

Applicant: Nan Jiang ,  Zvi Yaniv

Inventor： Nan Jiang ,  Zvi Yaniv

IPC: H05K1/03 ,  H05K1/05 ,  C04B41/90 ,  C04B41/00 ,  C04B41/52 ,  H05K1/02 ,  H05K1/09 ,  H05K3/12 ,  H01L23/373 ,  H05K1/18 ,  C04B111/00

CPC classification number: H05K1/053 ,  C04B41/009 ,  C04B41/52 ,  C04B41/90 ,  C04B2111/00844 ,  H01L23/373 ,  H01L2924/0002 ,  H05K1/0284 ,  H05K1/09 ,  H05K1/181 ,  H05K3/12 ,  H05K2201/0104 ,  H05K2201/0137 ,  H05K2201/0195 ,  H05K2201/0323 ,  H05K2201/06 ,  H05K2201/10106 ,  H01L2924/00 ,  C04B35/522 ,  C04B41/4539 ,  C04B41/5001 ,  C04B41/5031 ,  C04B41/5089 ,  C04B41/5059 ,  C04B41/5092 ,  C04B41/522 ,  C04B41/5063 ,  C04B41/5064 ,  C04B41/4535 ,  C04B41/4572 ,  C04B41/5127

Abstract: Different kinds of printing pastes or inks are utilized in various combinations to develop multiple ceramic dielectric layers on graphitic substrates in order to create effective dielectric ceramic layers that combine good adhesion to both graphitic substrates and printed copper traces, and strong insulating capability. The pastes or inks may comprise a high thermal conductivity powder.

Abstract translation: 不同种类的印刷浆料或油墨被用于各种组合以在石墨基材上形成多个陶瓷电介质层，以便产生有效的介电陶瓷层，其与石墨基材和印刷的铜迹线具有良好的粘合性，并具有很强的绝缘性能。 糊剂或油墨可以包含高导热性粉末。

公开(公告)号：US08937020B2

公开(公告)日：2015-01-20

申请号：US13922323

申请日：2013-06-20

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Toru Takayama ,  Keiji Sato

IPC: H01L21/302 ,  H01L21/461 ,  C04B41/00 ,  H01L29/786 ,  C04B35/453 ,  C23C14/34 ,  H01L21/02 ,  H01L29/423 ,  C04B35/01 ,  C23C14/56 ,  C04B35/645 ,  C23C14/10 ,  B29C31/00 ,  H01L29/417 ,  H01L29/66 ,  C04B41/80 ,  H01L29/45 ,  C04B111/00

CPC classification number: H01J37/3429 ,  B29C31/008 ,  C04B35/01 ,  C04B35/453 ,  C04B35/645 ,  C04B35/6455 ,  C04B41/0072 ,  C04B41/009 ,  C04B41/80 ,  C04B2111/00844 ,  C04B2235/3284 ,  C04B2235/3286 ,  C04B2235/3418 ,  C04B2235/658 ,  C04B2235/662 ,  C04B2235/666 ,  C04B2235/77 ,  C23C14/10 ,  C23C14/3414 ,  C23C14/564 ,  H01J2237/332 ,  H01L21/0242 ,  H01L21/02422 ,  H01L21/02488 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02631 ,  H01L29/41733 ,  H01L29/42384 ,  H01L29/45 ,  H01L29/66742 ,  H01L29/66969 ,  H01L29/78618 ,  H01L29/7869 ,  C04B35/04 ,  C04B35/10 ,  C04B35/457 ,  C04B41/4517 ,  C04B41/53

Abstract: One object is to provide a deposition technique for forming an oxide semiconductor film. By forming an oxide semiconductor film using a sputtering target including a sintered body of a metal oxide whose concentration of hydrogen contained is low, for example, lower than 1×1016 atoms/cm3, the oxide semiconductor film contains a small amount of impurities such as a compound containing hydrogen typified by H2O or a hydrogen atom. In addition, this oxide semiconductor film is used as an active layer of a transistor.

Abstract translation: 一个目的是提供一种用于形成氧化物半导体膜的沉积技术。 通过使用包含含氢浓度低的金属氧化物的烧结体（例如低于1×1016原子/ cm3）的溅射靶形成氧化物半导体膜，氧化物半导体膜含有少量的杂质如 含有以H 2 O或氢原子为代表的氢的化合物。 此外，该氧化物半导体膜用作晶体管的有源层。