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公开(公告)号：US20130082780A1
公开(公告)日：2013-04-04
申请号：US13250340
申请日：2011-09-30
申请人： Ravi K. Kummaraguntla , Ruifeng Sun
发明人： Ravi K. Kummaraguntla , Ruifeng Sun
CPC分类号： H03G3/30
摘要： Techniques are disclosed relating to radio frequency (RF) power detection. In one embodiment, a power detection unit is disclosed that includes a multiplier circuit configured to receive a first voltage of a voltage differential signal at gates of a first transistor pair and a second voltage of the voltage differential signal at gates of a second transistor pair. The first multiplier is configured to output a current that varies proportionally to a square of a voltage difference between the first and second voltages. In some embodiments, sources of the first transistor pair are coupled to sources of the second transistor pair, and the sources of the second transistor pair are coupled together. In some embodiments, the power detection unit is configured to compensate for mismatched transistors by applying offset voltages to bodies of transistors in the first and second transistor pairs.
摘要翻译： 公开了与射频（RF）功率检测有关的技术。 在一个实施例中，公开了一种功率检测单元，其包括乘法器电路，其被配置为在第二晶体管对的栅极处接收第一晶体管对的栅极处的电压差分信号的第一电压和电压差分信号的第二电压。 第一乘法器被配置为输出与第一和第二电压之间的电压差的平方成比例地变化的电流。 在一些实施例中，第一晶体管对的源极耦合到第二晶体管对的源极，并且第二晶体管对的源极耦合在一起。 在一些实施例中，功率检测单元被配置为通过向第一和第二晶体管对中的晶体管的主体施加偏移电压来补偿失配的晶体管。
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公开(公告)号：US06642503B2
公开(公告)日：2003-11-04
申请号：US10064132
申请日：2002-06-13
IPC分类号： H01L3100
CPC分类号： H04N5/37455 , G01J1/44 , H01L27/14643 , H04N5/355 , H04N5/37457
摘要： A photodiode sensor (25) has a photodiode (30) with an associated capacitance (34), which may be a parasitic capacitance of the photodiode (30). A switch (36) is provided for charging the capacitance (34) to a predetermined reset voltage (Vreset), such that when light impinges upon the photodiode (30), the voltage on the capacitance (34) discharges in a time proportional to an intensity of the light. A circuit (42) is also provided for measuring the time for the capacitance (34) to discharge to a predetermined threshold value (33), which may be a function of time. The voltage on the output (38) of the comparator (28) may be sampled, with the sampling period also being variable as a function of time. The image may be reconstructed from time data indicating the relative times that discharge voltage of the pixels in an array cross the reference voltage (33).
摘要翻译： 光电二极管传感器（25）具有具有相关电容（34）的光电二极管（30），其可以是光电二极管（30）的寄生电容。 提供开关（36）用于将电容（34）充电到预定的复位电压（Vreset），使得当光照射在光电二极管（30）上时，电容（34）上的电压在与 光的强度。 还提供电路（42），用于测量电容（34）放电到预定阈值（33）的时间，其可以是时间的函数。 可以对比较器（28）的输出（38）上的电压进行采样，采样周期也随着时间的变化而变化。 可以从指示阵列中的像素的放电电压与参考电压（33）相交的相对时间的时间数据重建图像。
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公开(公告)号：US08428534B1
公开(公告)日：2013-04-23
申请号：US13250340
申请日：2011-09-30
申请人： Ravi K. Kummaraguntla , Ruifeng Sun
发明人： Ravi K. Kummaraguntla , Ruifeng Sun
CPC分类号： H03G3/30
摘要： Techniques are disclosed relating to radio frequency (RF) power detection. In one embodiment, a power detection unit is disclosed that includes a multiplier circuit configured to receive a first voltage of a voltage differential signal at gates of a first transistor pair and a second voltage of the voltage differential signal at gates of a second transistor pair. The first multiplier is configured to output a current that varies proportionally to a square of a voltage difference between the first and second voltages. In some embodiments, sources of the first transistor pair are coupled to sources of the second transistor pair, and the sources of the second transistor pair are coupled together. In some embodiments, the power detection unit is configured to compensate for mismatched transistors by applying offset voltages to bodies of transistors in the first and second transistor pairs.
摘要翻译： 公开了与射频（RF）功率检测有关的技术。 在一个实施例中，公开了一种功率检测单元，其包括乘法器电路，其被配置为在第二晶体管对的栅极处接收第一晶体管对的栅极处的电压差分信号的第一电压和电压差分信号的第二电压。 第一乘法器被配置为输出与第一和第二电压之间的电压差的平方成比例地变化的电流。 在一些实施例中，第一晶体管对的源极耦合到第二晶体管对的源极，并且第二晶体管对的源极耦合在一起。 在一些实施例中，功率检测单元被配置为通过向第一和第二晶体管对中的晶体管的主体施加偏移电压来补偿失配的晶体管。
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