摘要:
An amplifier includes a negative gain amplifier, a load element, and a transconductance device. The negative gain amplifier has an input and an output. The load element has a first terminal coupled to a power supply voltage terminal, and a second terminal. The transconductance device has a first current electrode coupled to the second terminal of the load element, a control electrode coupled to the output of the negative gain amplifier, and a second current electrode coupled to the input of the negative gain amplifier.
摘要:
Techniques are disclosed relating to radio frequency (RF) power detection. In one embodiment, a power detection unit is disclosed that includes a multiplier circuit configured to receive a first voltage of a voltage differential signal at gates of a first transistor pair and a second voltage of the voltage differential signal at gates of a second transistor pair. The first multiplier is configured to output a current that varies proportionally to a square of a voltage difference between the first and second voltages. In some embodiments, sources of the first transistor pair are coupled to sources of the second transistor pair, and the sources of the second transistor pair are coupled together. In some embodiments, the power detection unit is configured to compensate for mismatched transistors by applying offset voltages to bodies of transistors in the first and second transistor pairs.
摘要:
In one form, a power converter for a power detector or the like includes first and third transistors of a first conductivity type, and second and fourth transistors of a second conductivity type. A control electrode of the first transistor receives a first bias voltage plus a positive component of a differential input signal. The second transistor is coupled in series with the first transistor and has a control electrode receiving a second bias voltage plus a negative component of the differential input signal. The third transistor is biased using the first bias voltage plus the negative component. The fourth transistor is coupled in series with the third transistor and is biased using the second bias voltage plus the positive component. A common interconnection point of the first and third transistors forms an output node.
摘要:
A demodulator can include first data and clock pads to couple the demodulator to a host device via a first bus, and second data and clock pads to couple the demodulator to a radio frequency (RF) tuner via a second bus. The device may further include passthrough logic to couple host data and a host clock from the first bus to the second bus and to couple tuner data from the second bus to the first bus during a passthrough mode. During this mode, however, the two buses may remain electrically decoupled. When the passthrough mode is disabled, the RF tuner is thus shielded from noise present on the first bus.
摘要:
In one form, a power detector includes first and third transistors of a first conductivity type, and second and fourth transistors of a second conductivity type. A control electrode of the first transistor receives a first bias voltage plus a positive component of a differential input signal. The second transistor is coupled in series with the first transistor and has a control electrode receiving a second bias voltage plus a negative component of the differential input signal. The third transistor is biased using the first bias voltage plus the negative component. The fourth transistor is coupled in series with the third transistor and is biased using the second bias voltage plus the positive component. A common interconnection point of the first and third transistors forms an output node. In another form, a power detector compares an output of a power detector core to multiple threshold voltages in corresponding comparators.
摘要:
A demodulator can include first data and clock pads to couple the demodulator to a host device via a first bus, and second data and clock pads to couple the demodulator to a radio frequency (RF) tuner via a second bus. The device may further include passthrough logic to couple host data and a host clock from the first bus to the second bus and to couple tuner data from the second bus to the first bus during a passthrough mode. During this mode, however, the two buses may remain electrically decoupled. When the passthrough mode is disabled, the RF tuner is thus shielded from noise present on the first bus.
摘要:
In one form, a power detector includes first and third transistors of a first conductivity type, and second and fourth transistors of a second conductivity type. A control electrode of the first transistor receives a first bias voltage plus a positive component of a differential input signal. The second transistor is coupled in series with the first transistor and has a control electrode receiving a second bias voltage plus a negative component of the differential input signal. The third transistor is biased using the first bias voltage plus the negative component. The fourth transistor is coupled in series with the third transistor and is biased using the second bias voltage plus the positive component. A common interconnection point of the first and third transistors forms an output node. In another form, a power detector compares an output of a power detector core to multiple threshold voltages in corresponding comparators.
摘要:
A demodulator can include first data and clock pads to couple the demodulator to a host device via a first bus, and second data and clock pads to couple the demodulator to a radio frequency (RF) tuner via a second bus. The device may further include passthrough logic to couple host data and a host clock from the first bus to the second bus and to couple tuner data from the second bus to the first bus during a passthrough mode. During this mode, however, the two buses may remain electrically decoupled. When the passthrough mode is disabled, the RF tuner is thus shielded from noise present on the first bus.
摘要:
The present invention provides an anti-snoring device based on an expansion type silencer, and proposes the technical solution from the respective of eliminating the “effect” in the causality of snoring. The anti-snoring device comprises an expansion chamber, a tube, and an active noise elimination module. The expansion chamber is connected to the active noise elimination module. The active noise elimination module further comprises a secondary sound source, a microphone, and a control module. The expansion chamber further comprises an opening for sealing and shielding the mouth and nose organ and forming an acoustic system of the expansion type silencer together with the sealed and shielded face skin. The tube is a respiratory airflow channel, and is an acoustic device having acoustic impedance different from that of the expansion chamber. In this way, the anti-snoring device provided in the utility model has the beneficial effects of being wide in applicability, large in noise elimination amount, wide in noise elimination bandwidth, small in size, light in weight, and low in electric energy consumption.
摘要:
In one example, a semiconductor die includes multi-standard, multi-channel expandable television/satellite receiver that can be flexibly implemented in a number of different configurations to enable incorporation into a plurality of different systems. The semiconductor die may include multiple tuners to receive and tune a terrestrial radio frequency (RF) signal and a satellite RF signal. These tuners may include different frequency synthesizers including voltage controlled oscillators (VCOs) to generate VCO signals at different frequencies, mixers to downconvert the RF signals to baseband signals using the VCO signals. In an implementation, the semiconductor die may further include shared circuitry coupled to the tuners to digitize, process and demodulate the baseband signals.