公开(公告)号：US20120012556A1

公开(公告)日：2012-01-19

申请号：US12919293

申请日：2009-02-26

申请人： Naoki Matsumoto ,  Kazuto Takai ,  Reika Ko ,  Nobuyuki Okayama

发明人： Naoki Matsumoto ,  Kazuto Takai ,  Reika Ko ,  Nobuyuki Okayama

IPC分类号： C23F1/00 ,  C23F1/08

CPC分类号： H01L21/32137 ,  H01J37/32192 ,  H01J37/32935 ,  H01J2237/2001 ,  H01L21/67109 ,  H01L21/67248

摘要： A plasma etching apparatus 11 includes a mounting table that holds a semiconductor substrate W thereon; a first heater 18a that heats a central region of the semiconductor substrate W held on the mounting table 14; a second heater 18b that heats an edge region around the central region of the semiconductor substrate W held on the mounting table 14; a reactant gas supply unit 13 that supplies a reactant gas for a plasma process toward the central region of the semiconductor substrate W held on the mounting table 14; and a control unit 20 that performs a plasma etching process on the semiconductor substrate W while controlling the first heater 18a and the second heater 18b to heat the central region and the edge region of the processing target substrate W held on the mounting table 14 to different temperatures.

摘要翻译： 等离子体蚀刻装置11包括在其上保持半导体衬底W的安装台; 第一加热器18a，其加热保持在安装台14上的半导体基板W的中心区域; 第二加热器18b，其加热保持在安装台14上的半导体基板W的中心区域周围的边缘区域; 向保持在安装台14上的半导体基板W的中心区域供给等离子体处理用反应气体的反应气体供给部13; 以及控制单元20，其在控制第一加热器18a和第二加热器18b的同时对半导体基板W进行等离子体蚀刻处理，以将保持在安装台14上的处理对象基板W的中心区域和边缘区域加热到不同 温度。

公开(公告)号：US09263298B2

公开(公告)日：2016-02-16

申请号：US12919293

申请日：2009-02-26

申请人： Naoki Matsumoto ,  Kazuto Takai ,  Reika Ko ,  Nobuyuki Okayama

发明人： Naoki Matsumoto ,  Kazuto Takai ,  Reika Ko ,  Nobuyuki Okayama

IPC分类号： C23C16/00 ,  C23F1/00 ,  H01L21/306 ,  H01L21/3213 ,  H01J37/32 ,  H01L21/67

CPC分类号： H01L21/32137 ,  H01J37/32192 ,  H01J37/32935 ,  H01J2237/2001 ,  H01L21/67109 ,  H01L21/67248

摘要： A plasma etching apparatus 11 includes a mounting table that holds a semiconductor substrate W thereon; a first heater 18a that heats a central region of the semiconductor substrate W held on the mounting table 14; a second heater 18b that heats an edge region around the central region of the semiconductor substrate W held on the mounting table 14; a reactant gas supply unit 13 that supplies a reactant gas for a plasma process toward the central region of the semiconductor substrate W held on the mounting table 14; and a control unit 20 that performs a plasma etching process on the semiconductor substrate W while controlling the first heater 18a and the second heater 18b to heat the central region and the edge region of the processing target substrate W held on the mounting table 14 to different temperatures.

摘要翻译： 等离子体蚀刻装置11包括在其上保持半导体衬底W的安装台; 第一加热器18a，其加热保持在安装台14上的半导体基板W的中心区域; 第二加热器18b，其加热保持在安装台14上的半导体基板W的中心区域周围的边缘区域; 向保持在安装台14上的半导体基板W的中心区域供给等离子体处理用反应气体的反应气体供给部13; 以及控制单元20，其在控制第一加热器18a和第二加热器18b的同时对半导体基板W进行等离子体蚀刻处理，以将保持在安装台14上的处理对象基板W的中心区域和边缘区域加热到不同 温度。