公开(公告)号：US09263298B2

公开(公告)日：2016-02-16

申请号：US12919293

申请日：2009-02-26

申请人： Naoki Matsumoto ,  Kazuto Takai ,  Reika Ko ,  Nobuyuki Okayama

发明人： Naoki Matsumoto ,  Kazuto Takai ,  Reika Ko ,  Nobuyuki Okayama

IPC分类号： C23C16/00 ,  C23F1/00 ,  H01L21/306 ,  H01L21/3213 ,  H01J37/32 ,  H01L21/67

CPC分类号： H01L21/32137 ,  H01J37/32192 ,  H01J37/32935 ,  H01J2237/2001 ,  H01L21/67109 ,  H01L21/67248

摘要： A plasma etching apparatus 11 includes a mounting table that holds a semiconductor substrate W thereon; a first heater 18a that heats a central region of the semiconductor substrate W held on the mounting table 14; a second heater 18b that heats an edge region around the central region of the semiconductor substrate W held on the mounting table 14; a reactant gas supply unit 13 that supplies a reactant gas for a plasma process toward the central region of the semiconductor substrate W held on the mounting table 14; and a control unit 20 that performs a plasma etching process on the semiconductor substrate W while controlling the first heater 18a and the second heater 18b to heat the central region and the edge region of the processing target substrate W held on the mounting table 14 to different temperatures.

摘要翻译： 等离子体蚀刻装置11包括在其上保持半导体衬底W的安装台; 第一加热器18a，其加热保持在安装台14上的半导体基板W的中心区域; 第二加热器18b，其加热保持在安装台14上的半导体基板W的中心区域周围的边缘区域; 向保持在安装台14上的半导体基板W的中心区域供给等离子体处理用反应气体的反应气体供给部13; 以及控制单元20，其在控制第一加热器18a和第二加热器18b的同时对半导体基板W进行等离子体蚀刻处理，以将保持在安装台14上的处理对象基板W的中心区域和边缘区域加热到不同 温度。

公开(公告)号：US20120012556A1

公开(公告)日：2012-01-19

申请号：US12919293

申请日：2009-02-26

申请人： Naoki Matsumoto ,  Kazuto Takai ,  Reika Ko ,  Nobuyuki Okayama

发明人： Naoki Matsumoto ,  Kazuto Takai ,  Reika Ko ,  Nobuyuki Okayama

IPC分类号： C23F1/00 ,  C23F1/08

CPC分类号： H01L21/32137 ,  H01J37/32192 ,  H01J37/32935 ,  H01J2237/2001 ,  H01L21/67109 ,  H01L21/67248

摘要： A plasma etching apparatus 11 includes a mounting table that holds a semiconductor substrate W thereon; a first heater 18a that heats a central region of the semiconductor substrate W held on the mounting table 14; a second heater 18b that heats an edge region around the central region of the semiconductor substrate W held on the mounting table 14; a reactant gas supply unit 13 that supplies a reactant gas for a plasma process toward the central region of the semiconductor substrate W held on the mounting table 14; and a control unit 20 that performs a plasma etching process on the semiconductor substrate W while controlling the first heater 18a and the second heater 18b to heat the central region and the edge region of the processing target substrate W held on the mounting table 14 to different temperatures.

摘要翻译： 等离子体蚀刻装置11包括在其上保持半导体衬底W的安装台; 第一加热器18a，其加热保持在安装台14上的半导体基板W的中心区域; 第二加热器18b，其加热保持在安装台14上的半导体基板W的中心区域周围的边缘区域; 向保持在安装台14上的半导体基板W的中心区域供给等离子体处理用反应气体的反应气体供给部13; 以及控制单元20，其在控制第一加热器18a和第二加热器18b的同时对半导体基板W进行等离子体蚀刻处理，以将保持在安装台14上的处理对象基板W的中心区域和边缘区域加热到不同 温度。

公开(公告)号：US20110240598A1

公开(公告)日：2011-10-06

申请号：US13129607

申请日：2009-08-25

申请人： Nobuyuki Okayama ,  Naoki Matsumoto

发明人： Nobuyuki Okayama ,  Naoki Matsumoto

IPC分类号： C23F1/00 ,  C23F1/08

CPC分类号： H01J37/3244 ,  C23C16/452 ,  C23C16/4558 ,  H01J37/32192

摘要： A plasma processing apparatus 11 includes a reactant gas supply unit 13 for supplying a reactant gas for a plasma process into a processing chamber 12. The reactant gas supply unit 13 includes a first reactant gas supply unit 61 provided at a center of a dielectric plate 16 and configured to supply the reactant gas in a directly downward direction toward a central region of a processing target substrate W held on a holding table 14; and a second reactant gas supply unit 62 provided at a position directly above the holding table 14 but not directly above the processing target substrate W held on the holding table 14 and configured to supply the reactant gas toward a center of the processing target substrate W held on the holding table 14.

摘要翻译： 等离子体处理装置11包括用于将等离子体处理用反应气体供给到处理室12中的反应气供给部13.反应气供给部13具备设置在电介质板16的中央的第一反应气供给部61 并且被配置为朝向保持在保持台14上的处理对象基板W的中心区域的直接向下方向供给反应气体; 以及第二反应气体供给部62，其设置在保持台14正上方的位置，但不是保持在保持台14上的处理对象基板W的正上方，并被配置为朝向处理对象基板W的中心供给反应气体 在桌子14上。

公开(公告)号：US20070283891A1

公开(公告)日：2007-12-13

申请号：US11727407

申请日：2007-03-26

申请人： Nobuyuki Okayama

发明人： Nobuyuki Okayama

IPC分类号： C23C16/54 ,  C23F1/00

CPC分类号： C23C16/4586 ,  H01J37/32091 ,  H01L21/67109 ,  H01L21/6831

摘要： The present invention is a table for supporting a substrate to be processed, comprising a metallic member, and a ceramic plate laminated to the top surface of the metallic member, characterized in that an electrostatic chuck electrode is embedded in the ceramic plate, that a groove for forming a cooling medium passageway is made in at least one of the back surface of the ceramic plate and the top surface of the metallic member, and that the ceramic plate and the metallic member are joined together with an adhesive layer.

摘要翻译： 本发明是一种用于支撑待加工基材的工作台，包括金属部件和层叠在金属部件的顶面上的陶瓷板，其特征在于，将静电卡盘电极嵌入陶瓷板中， 在陶瓷板的后表面和金属构件的上表面中的至少一个中形成冷却介质通道，并且陶瓷板和金属构件用粘合剂层接合在一起。

公开(公告)号：US06334983B1

公开(公告)日：2002-01-01

申请号：US09402393

申请日：1999-10-05

申请人： Nobuyuki Okayama ,  Hidehito Saegusa ,  Jun Ozawa ,  Daisuke Hayashi ,  Naoki Takayama ,  Koichi Kazama

发明人： Nobuyuki Okayama ,  Hidehito Saegusa ,  Jun Ozawa ,  Daisuke Hayashi ,  Naoki Takayama ,  Koichi Kazama

IPC分类号： B01J1908

CPC分类号： C23C16/45565 ,  C23C16/455 ,  C23C16/5096 ,  H01J37/3244 ,  H01J37/32477 ,  Y10T29/49002 ,  Y10T29/49117 ,  Y10T29/532 ,  Y10T29/53204

摘要： A processing system has an upper electrode with gas discharge holes of a shape corresponding to the external we of insulating members. The insulating members are formed of a poly(ether etherketone) resin, a polyimide resin, a poly(ether imide) resin or the like. Each insulating member has a step at its outer surface and an internal longitudinal through hole tapered to expand toward the processing chamber. The insulating members are pressed in the gas discharge holes to bring the steps into contact with shoulders formed in the sidewalls of the gas discharge holes. A part of each insulting member, as fitted in the gas discharge hole, projects from a surface of the upper electrode that faces a susceptor.

摘要翻译： 处理系统具有具有与绝缘构件的外部对应的形状的气体排出孔的上部电极。 绝缘构件由聚（醚醚酮）树脂，聚酰亚胺树脂，聚（醚酰亚胺）树脂等形成。 每个绝缘构件在其外表面具有台阶，并且内部纵向通孔锥形以向处理室扩展。 绝缘构件被压在气体排放孔中，使台阶与气体排放孔的侧壁中形成的肩部接触。 每个绝缘构件的一部分安装在气体排放孔中，从面向基座的上部电极的表面突出。

公开(公告)号：USRE39969E1

公开(公告)日：2008-01-01

申请号：US10463435

申请日：1998-04-08

申请人： Nobuyuki Okayama ,  Hidehito Saegusa ,  Jun Ozawa ,  Daisuke Hayashi ,  Naoki Takayama ,  Koichi Kazama

发明人： Nobuyuki Okayama ,  Hidehito Saegusa ,  Jun Ozawa ,  Daisuke Hayashi ,  Naoki Takayama ,  Koichi Kazama

IPC分类号： H01L21/306

CPC分类号： C23C16/45565 ,  C23C16/455 ,  C23C16/5096 ,  H01J37/3244 ,  H01J37/32477 ,  Y10T29/49002 ,  Y10T29/49117 ,  Y10T29/532 ,  Y10T29/53204

摘要： A processing system has an upper electrode with gas discharge holes of a shape corresponding to the external we of insulating members. The insulating members are formed of a poly(ether etherketone) resin, a polyimide resin, a poly (ether imide) resin or the like. Each insulating member has a step at its outer surface and an internal longitudinal through hole tapered to expand toward the processing chamber. The insulating members are pressed in the gas discharge holes to bring the steps into contact with shoulders formed in the sidewalls of the gas discharge holes. A part of each insulating member, as fitted in the gas discharge hole, projects from a surface of the upper electrode that faces a susceptor.

摘要翻译： 处理系统具有具有与绝缘构件的外部对应的形状的气体排出孔的上部电极。 绝缘构件由聚（醚醚酮）树脂，聚酰亚胺树脂，聚（醚酰亚胺）树脂等形成。 每个绝缘构件在其外表面具有台阶，并且内部纵向通孔锥形以向处理室扩展。 绝缘构件被压在气体排放孔中，使台阶与气体排放孔的侧壁中形成的肩部接触。 每个绝缘构件的安装在气体排出孔中的部分从面向基座的上电极的表面突出。

公开(公告)号：US07658816B2

公开(公告)日：2010-02-09

申请号：US10933383

申请日：2004-09-03

申请人： Akira Koshiishi ,  Hideaki Tanaka ,  Nobuyuki Okayama ,  Masaaki Miyagawa ,  Shunsuke Mizukami ,  Wataru Shimizu ,  Jun Hirose ,  Toshikatsu Wakaki ,  Tomonori Miwa ,  Jun Ooyabu ,  Daisuke Hayashi

发明人： Akira Koshiishi ,  Hideaki Tanaka ,  Nobuyuki Okayama ,  Masaaki Miyagawa ,  Shunsuke Mizukami ,  Wataru Shimizu ,  Jun Hirose ,  Toshikatsu Wakaki ,  Tomonori Miwa ,  Jun Ooyabu ,  Daisuke Hayashi

IPC分类号： C23F1/00 ,  H01L21/306 ,  C23C16/00

CPC分类号： H01L21/68735 ,  H01J37/32642 ,  H01L21/68757

摘要： A focus ring and a plasma processing apparatus capable of improving an in-surface uniformity of a surface and reducing occurrences of deposition on a backside surface of a peripheral portion of a semiconductor wafer compared to a conventional case are provided. Installed in a vacuum chamber is a susceptor for mounting the semiconductor wafer thereon and a focus ring is installed to surround the semiconductor wafer mounted on the susceptor. The focus ring includes an annular lower member made of a dielectric, and an annular upper member made of a conductive material and mounted on the lower member. The upper member includes a flat portion which is an outer peripheral portion having a top surface positioned higher than a surface to be processed of the semiconductor wafer W, and an inclined portion which is an inner peripheral portion inclined inwardly.

摘要翻译： 提供了一种聚焦环和等离子体处理装置，其能够改善表面的表面均匀性并减少与常规情况相比在半导体晶片的周边部分的背面上沉积的情况。 安装在真空室中的是用于在其上安装半导体晶片的基座，并且安装聚焦环以围绕安装在基座上的半导体晶片。 聚焦环包括由电介质制成的环形下部构件和由导电材料制成并安装在下部构件上的环形上部构件。 上部构件包括平坦部，该平坦部是具有位于比半导体晶片W的待加工表面高的顶面的外周部，以及作为向内倾斜的内周部的倾斜部。

公开(公告)号：US07544393B2

公开(公告)日：2009-06-09

申请号：US11330081

申请日：2006-01-12

申请人： Shinji Muto ,  Chihiro Taguchi ,  Nobuyuki Okayama

发明人： Shinji Muto ,  Chihiro Taguchi ,  Nobuyuki Okayama

IPC分类号： B05D1/32 ,  C23C4/10 ,  B05C13/00 ,  H01L21/683 ,  B23B31/28

CPC分类号： H01L21/68757 ,  C23C4/02 ,  C23C4/18 ,  H01L21/6833 ,  Y10T279/23

摘要： The susceptor of a plasma treating device, or the electrostatic chuck of a substrate table, is formed by ceramic thermal spray method. A thermally sprayed ceramic layer is pore-sealed by methacrylic resin. Resin raw material mainly containing methyl methacrylate is applied to and impregnated into the thermally sprayed ceramic layer and then is cured to thereby fill pores between ceramic particles in the thermally sprayed ceramic layer with methacrylic resin. Methacrylic resin raw material solution, which does not produce pores at curing, can complete perfect pore sealing.

摘要翻译： 等离子体处理装置的基座或衬底台的静电吸盘由陶瓷热喷涂法形成。 热喷涂陶瓷层被甲基丙烯酸树脂密封。 将主要含有甲基丙烯酸甲酯的树脂原料涂覆并浸渍到热喷涂陶瓷层中，然后固化，从而在喷涂陶瓷层中的陶瓷颗粒与甲基丙烯酸树脂之间填充孔隙。 甲基丙烯酸树脂原料溶液在固化时不产生孔隙，可以完成孔密封。

公开(公告)号：USRE40046E1

公开(公告)日：2008-02-12

申请号：US10463439

申请日：1998-04-08

申请人： Nobuyuki Okayama ,  Hidehito Saegusa ,  Jun Ozawa ,  Daisuke Hayashi ,  Naoki Takayama ,  Koichi Kazama

发明人： Nobuyuki Okayama ,  Hidehito Saegusa ,  Jun Ozawa ,  Daisuke Hayashi ,  Naoki Takayama ,  Koichi Kazama

IPC分类号： B23P19/00 ,  H01L21/306

CPC分类号： C23C16/45565 ,  C23C16/455 ,  C23C16/5096 ,  H01J37/3244 ,  H01J37/32477 ,  Y10T29/49002 ,  Y10T29/49117 ,  Y10T29/532 ,  Y10T29/53204

摘要： A processing system has an upper electrode with gas discharge holes of a shape corresponding to the external we of insulating members. The insulating members are formed of a poly(ether etherketone) resin, a polyimide resin, a poly(ether imide) resin or the like. Each insulating member has a step at its outer surface and an internal longitudinal through hole tapered to expand toward the processing chamber. The insulating members are pressed in the gas discharge holes to bring the steps into contact with shoulders formed in the sidewalls of the gas discharge holes. A part of each insulating member, as fitted in the gas discharge hole, projects from a surface of the upper electrode that faces a susceptor.

摘要翻译： 处理系统具有具有与绝缘构件的外部对应的形状的气体排出孔的上部电极。 绝缘构件由聚（醚醚酮）树脂，聚酰亚胺树脂，聚（醚酰亚胺）树脂等形成。 每个绝缘构件在其外表面具有台阶，并且内部纵向通孔锥形以向处理室扩展。 绝缘构件被压在气体排放孔中，使台阶与气体排放孔的侧壁中形成的肩部接触。 每个绝缘构件的安装在气体排出孔中的部分从面向基座的上电极的表面突出。

公开(公告)号：US20120211165A1

公开(公告)日：2012-08-23

申请号：US13502829

申请日：2010-09-29

申请人： Wataru Yoshikawa ,  Kazuki Moyama ,  Nobuyuki Okayama ,  Kenji Sudou ,  Yasuhiro Otsuka

发明人： Wataru Yoshikawa ,  Kazuki Moyama ,  Nobuyuki Okayama ,  Kenji Sudou ,  Yasuhiro Otsuka

IPC分类号： H01L21/3065 ,  C23C16/50 ,  C23C16/458

CPC分类号： H01L21/68735 ,  H01L21/6875

摘要： A sample table which stably holds a semiconductor wafer by maintaining smoothness of a contact surface via a lapping process and forming the contact surface to have an approximate recess shape, and a microwave plasma processing apparatus including the sample table. The sample table holds a semiconductor wafer on which a plasma process is to be performed, and includes: an adsorption plate that has a contact surface on which a lapping process has been performed and surface-contacting the semiconductor wafer, and that adsorbs the semiconductor wafer; and a supporting substrate which has a recess surface to which a noncontact surface of the adsorption plate is adhered, wherein a difference between a depth of an approximate center portion of the recess surface and a depth of a distant portion spaced apart from the approximate center portion is larger than a difference between a thickness of the adsorption plate at a portion contacting the approximate center portion and a thickness of the adsorption plate at a portion contacting the distant portion. Also, a microwave plasma processing apparatus includes the sample table.

摘要翻译： 一种样品台，其通过经由研磨工艺保持接触表面的平滑度并形成接触表面以使其具有大致的凹陷形状，并且包括样品台的微波等离子体处理装置，稳定地保持半导体晶片。 样品台保持要在其上进行等离子体处理的半导体晶片，并且包括：吸附板，其具有在其上进行研磨工艺并与半导体晶片表面接触的接触表面，并且吸附半导体晶片 ; 以及支撑基板，其具有粘附有吸附板的非接触面的凹部表面，其中，所述凹部表面的大致中心部分的深度与远离所述凹部表面的大致中心部分间隔开的远处的深度之间的差 大于接触大致中心部分的部分的吸附板的厚度与接触远端部分的部分的吸附板的厚度之间的差。 此外，微波等离子体处理装置包括样品台。