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公开(公告)号：US06586669B2
公开(公告)日：2003-07-01
申请号：US09876193
申请日：2001-06-06
IPC分类号： H01L3104
CPC分类号： H01L31/0735 , H01L31/0725 , H01L31/1844 , H01L31/1852 , Y02E10/544
摘要： A perfectly or approximately lattice-matched semiconductor layer for use in an electronic or optoelectronic device. Perfectly lattice-matched (“PLM”) semiconductor layers prevent or lessen the formation and propagation of crystal defects in semiconductor devices, defects that can decrease the performance characteristics of the device. For some semiconductors, the ability to optimize composition-dependent properties over the wider range of compositions that approximately lattice-matched (“ALM”) semiconductor layers allows is more advantageous than the lower strain and dislocation density encountered for PLM layers. In addition, PLM cell layers and ALM cell layers are also expected to result in improved radiation resistance characteristics for some semiconductor devices.
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公开(公告)号：US07119271B2
公开(公告)日：2006-10-10
申请号：US10356028
申请日：2003-01-31
CPC分类号： H01L31/02168 , H01L31/03046 , H01L31/03048 , H01L31/0687 , H01L31/0725 , H01L31/1852 , Y02E10/544
摘要： A photovoltaic cell or other optoelectronic device having a wide-bandgap semiconductor used in the window layer. This wider bandgap is achieved by using a semiconductor composition that is not lattice-matched to the cell layer directly beneath it and/or to the growth substrate. The wider bandgap of the window layer increases the transmission of short wavelength light into the emitter and base layers of the photovoltaic cell. This in turn increases the current generation in the photovoltaic cell. Additionally, the wider bandgap of the lattice mismatched window layer inhibits minority carrier injection and recombination in the window layer.
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