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公开(公告)号：US5164330A
公开(公告)日：1992-11-17
申请号：US686683
申请日：1991-04-17
IPC分类号： H01L21/28 , H01L21/302 , H01L21/3065 , H01L21/3205 , H01L21/321 , H01L21/3213 , H01L21/768
CPC分类号： H01L21/32115 , H01L21/32136 , H01L21/76879
摘要： A process for etching a tungsten layer formed on a semiconductor substrate is described. The etch is carried out in a parallel plate plasma reactor. The etchant gases include nitrogen trifluoride (NF.sub.3) and argon (Ar). The use of NF.sub.3 in a tungsten etching process reduces the build-up of polymers or sulfur residues on the electrode as occurs with processes utilizing sulfur or carbon fluorides as etchant gases. The process has a sufficiently high etch rate for volume production. The NF.sub.3 -Ar etch process can be used to etchback a blanket layer of deposited tungsten to form tungsten via plugs in contact areas of the device. In the via plug process, reduced micro-loading effect, that is, the tendency of some plugs to be etched away before the complete etching of the blanket layer, has been achieved. The etching of tunsten with NF.sub.3 -Ar process can be preformed in one or more steps in process utilizing several etching steps. Additionally, a tungsten etch incorporating one or more NF.sub.3 -Ar steps and one or more steps utilizing etchants such as SF.sub.6, Cl.sub.2, O.sub.2, CF.sub.4, CBrF.sub.3, CF.sub.3 Cl, CF.sub.2 Cl.sub.2 or similar etchants can be used to optimize etch rate and uniformity while obtaining the benefit of reduced residue build-up.
摘要翻译： 描述了用于蚀刻形成在半导体衬底上的钨层的工艺。 蚀刻在平行平板等离子体反应器中进行。 蚀刻剂气体包括三氟化氮（NF 3）和氩（Ar）。 在钨蚀刻工艺中使用NF3可以减少聚合物或硫残余物在电极上的积聚，这与使用硫或碳氟化物作为蚀刻剂气体的方法一样。 该方法具有足够高的蚀刻速率用于批量生产。 NF3-Ar蚀刻工艺可用于回蚀沉积的钨的覆盖层，以通过在器件的接触区域中的插塞形成钨。 在通孔插入过程中，已经实现了减小的微负载效应，即，在完全蚀刻覆盖层之前一些插塞被蚀刻掉的趋势。 用NF3-Ar工艺蚀刻tunsten可以在一个或多个步骤中利用几个蚀刻步骤进行。 另外，掺入一个或多个NF 3 -Ar步骤的钨蚀刻和利用诸如SF 6，Cl 2，O 2，CF 4，CBrF 3，CF 3 Cl，CF 2 Cl 2或类似蚀刻剂之类的蚀刻剂的一个或多个步骤可用于优化蚀刻速率和均匀性，同时获得 减少残留物积聚的好处。
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