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1.发明授权Integrated photonic semiconductor devices having ridge structures that are grown rather than etched, and methods for making same 有权具有生长而不是蚀刻的脊结构的集成光子半导体器件及其制造方法公开(公告)号：US07539228B2
公开(公告)日：2009-05-26
申请号：US11768214
申请日：2007-06-26
申请人： Simone Codato , Fang Ruiyu , Rigo Cesare , Guido Alberto Roggero , Marzia Rosso
发明人： Simone Codato , Fang Ruiyu , Rigo Cesare , Guido Alberto Roggero , Marzia Rosso
IPC分类号： H01S5/00
CPC分类号： H01S5/0265 , H01L33/0062 , H01L33/20 , H01S5/0425 , H01S5/101 , H01S5/1085 , H01S5/12 , H01S5/2077 , H01S5/22 , H01S5/2272
摘要： A SAG technique is used to grow the ridge structure in a photonic semiconductor device, such as an electroabsorption modulator integrated with a distributed feedback laser (EML) assembly. The adoption of this SAG technique to grow the ridge structure results in the formation of a self-assembled and self-aligned ridge structure that has a very precise configuration. The use of this process enables straight, bent and tilted ridge structures to be formed with high precision. In addition, because the ridge structure is self-assembled and self-aligned, a lesser number of processing steps are required to create the photonic device in comparison to the known approach that uses wet chemical etching techniques to form the ridge structure. The high precision of the ridge structure and the lesser number of processing steps needed to create the device increase manufacturing yield and allow overall cost of the device to be reduced.
摘要翻译： 使用SAG技术来生长光子半导体器件中的脊结构，例如与分布反馈激光器（EML）组件集成的电吸收调制器。 采用这种SAG技术来生长脊结构导致形成具有非常精确构造的自组装和自对准的脊结构。 使用该方法能够以高精度形成直的，弯曲的和倾斜的脊状结构。 此外，由于脊结构是自组装和自对准的，所以与使用湿化学蚀刻技术形成脊结构的已知方法相比，需要较少数量的处理步骤来创建光子器件。 脊结构的高精度和创建装置所需的较少数量的加工步骤增加了制造产量并且允许减少装置的整体成本。
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2.发明申请INTEGRATED PHOTONIC SEMICONDUCTOR DEVICES HAVING RIDGE STRUCTURES THAT ARE GROWN RATHER THAN ETCHED, AND METHODS FOR MAKING SAME 有权一体化的光电半导体器件，具有被烧蚀的RIDGE结构及其制造方法公开(公告)号：US20090003396A1
公开(公告)日：2009-01-01
申请号：US11768214
申请日：2007-06-26
申请人： Simone Codato , Fang Ruiyu , Rigo Cesare , Guido Alberto Roggero , Marzia Rosso
发明人： Simone Codato , Fang Ruiyu , Rigo Cesare , Guido Alberto Roggero , Marzia Rosso
CPC分类号： H01S5/0265 , H01L33/0062 , H01L33/20 , H01S5/0425 , H01S5/101 , H01S5/1085 , H01S5/12 , H01S5/2077 , H01S5/22 , H01S5/2272
摘要： A SAG technique is used to grow the ridge structure in a photonic semiconductor device, such as an electroabsorption modulator integrated with a distributed feedback laser (EML) assembly. The adoption of this SAG technique to grow the ridge structure results in the formation of a self-assembled and self-aligned ridge structure that has a very precise configuration. The use of this process enables straight, bent and tilted ridge structures to be formed with high precision. In addition, because the ridge structure is self-assembled and self-aligned, a lesser number of processing steps are required to create the photonic device in comparison to the known approach that uses wet chemical etching techniques to form the ridge structure. The high precision of the ridge structure and the lesser number of processing steps needed to create the device increase manufacturing yield and allow overall cost of the device to be reduced.
摘要翻译： 使用SAG技术来生长光子半导体器件中的脊结构，例如与分布反馈激光器（EML）组件集成的电吸收调制器。 采用这种SAG技术来生长脊结构导致形成具有非常精确构造的自组装和自对准的脊结构。 使用该方法能够以高精度形成直的，弯曲的和倾斜的脊状结构。 此外，由于脊结构是自组装和自对准的，所以与使用湿化学蚀刻技术形成脊结构的已知方法相比，需要较少数量的处理步骤来创建光子器件。 脊结构的高精度和创建装置所需的较少数量的加工步骤增加了制造产量并且允许减少装置的整体成本。
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