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公开(公告)号：US09708707B2
公开(公告)日：2017-07-18
申请号：US12783431
申请日：2010-05-19
IPC分类号： C23C16/34 , C23C16/455 , C23C16/507
CPC分类号： C23C16/34 , C23C16/45523 , C23C16/507
摘要： A hybrid deposition process of CVD and ALD, called NanoLayer Deposition (NLD) is provided. The NLD process is a cyclic sequential deposition process, comprising introducing a first plurality of precursors to deposit a thin layer with the deposition process not self limiting, followed by introducing a second plurality of precursors for plasma treating the thin deposited layer. The plasma can be isotropic, anisotropic, or a combination of isotropic and anisotropic to optimize the effectiveness of the treatment of the thin deposited layers.
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2.发明授权Dry etch stop process for eliminating electrical shorting in MRAM device structures 有权用于消除MRAM器件结构中电气短路的干蚀刻停止工艺公开(公告)号：US07645618B2
公开(公告)日：2010-01-12
申请号：US11724556
申请日：2007-03-14
IPC分类号： H01L21/00
CPC分类号： H01L43/12
摘要： The present invention relates generally to semiconductor fabrication and particularly to fabricating magnetic tunnel junction devices. In particular, this invention relates to a method for using the dielectric layer in tunnel junctions as an etch stop layer to eliminate electrical shorting that can result from the patterning process.
摘要翻译： 本发明一般涉及半导体制造，特别涉及制造磁性隧道结器件。 特别地，本发明涉及一种在隧道结中使用电介质层作为蚀刻停止层的方法，以消除由图案化过程产生的电短路。
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公开(公告)号：US20120021138A1
公开(公告)日：2012-01-26
申请号：US13235909
申请日：2011-09-19
IPC分类号： H05H1/24
CPC分类号： C23C16/56 , C23C16/409 , C23C16/45531 , C23C16/45536
摘要： A NanoLayer Deposition (NLD) process for depositing composite films of tertiary, quaternary, pentanary, and hexary stoichiometric films is provided. The inventive deposition process is a cyclic process consisting of a sequence of thin film deposition and treatment steps to obtain a desired film stoichiometry. The deposition steps are not self-limiting as in atomic layer deposition. In one embodiment for depositing a compound oxide film, the deposition process comprises a first deposition, followed by a hydrogen-containing plasma treatment, a second deposition followed by a hydrogen-containing plasma treatment, and then a third deposition followed by a hydrogen-containing plasma and then an oxygen-containing plasma treatment to produce a stoichiometric quaternary film. The cyclic process is repeated until the desired overall film thickness is achieved. The inventive process is used to fabricate high k dielectric films, ferroelectric films, piezoelectric films, and other complex oxides.
摘要翻译： 提供了用于沉积三次，四元，五元和六元化学计量薄膜的复合膜的纳米层沉积（NLD）沉积方法。 本发明的沉积工艺是由一系列薄膜沉积和处理步骤组成的循环工艺，以获得所需的膜化学计量。 沉积步骤不是像在原子层沉积中那样自限制的。 在用于沉积复合氧化物膜的一个实施方案中，沉积工艺包括第一沉积，随后是含氢等离子体处理，第二次沉积，然后进行含氢等离子体处理，然后进行第三次沉积，然后是含氢 然后进行含氧等离子体处理以产生化学计量的四元膜。 重复循环过程，直到达到所需的总膜厚度。 本发明的方法用于制造高k电介质膜，铁电体膜，压电膜和其它复合氧化物。
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4.发明申请DRY ETCH STOP PROCESS FOR ELIMINATING ELECTRICAL SHORTING IN MRAM DEVICE STRUCTURES 有权用于消除MRAM器件结构中的电气短路的干蚀刻停止工艺公开(公告)号：US20100022030A1
公开(公告)日：2010-01-28
申请号：US12552664
申请日：2009-09-02
CPC分类号： C07D401/04
摘要： The present invention relates generally to semiconductor fabrication and particularly to fabricating magnetic tunnel junction devices. In particular, this invention relates to a method for using the dielectric layer in tunnel junctions as an etch stop layer to eliminate electrical shorting that can result from the patterning process.
摘要翻译： 本发明一般涉及半导体制造，特别涉及制造磁性隧道结器件。 特别地，本发明涉及一种在隧道结中使用电介质层作为蚀刻停止层的方法，以消除由图案化过程产生的电短路。
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公开(公告)号：US09121098B2
公开(公告)日：2015-09-01
申请号：US13235909
申请日：2011-09-19
IPC分类号： H05H1/00 , C23C16/56 , C23C16/40 , C23C16/455
CPC分类号： C23C16/56 , C23C16/409 , C23C16/45531 , C23C16/45536
摘要： A NanoLayer Deposition (NLD) process for depositing composite films of tertiary, quaternary, pentanary, and hexary stoichiometric films is provided. The inventive deposition process is a cyclic process consisting of a sequence of thin film deposition and treatment steps to obtain a desired film stoichiometry. The deposition steps are not self-limiting as in atomic layer deposition. In one embodiment for depositing a compound oxide film, the deposition process comprises a first deposition, followed by a hydrogen-containing plasma treatment, a second deposition followed by a hydrogen-containing plasma treatment, and then a third deposition followed by a hydrogen-containing plasma and then an oxygen-containing plasma treatment to produce a stoichiometric quaternary film. The cyclic process is repeated until the desired overall film thickness is achieved. The inventive process is used to fabricate high k dielectric films, ferroelectric films, piezoelectric films, and other complex oxides.
摘要翻译： 提供了用于沉积三次，四元，五元和六元化学计量薄膜的复合膜的纳米层沉积（NLD）沉积方法。 本发明的沉积工艺是由一系列薄膜沉积和处理步骤组成的循环工艺，以获得所需的膜化学计量。 沉积步骤不是像在原子层沉积中那样自限制的。 在用于沉积复合氧化物膜的一个实施方案中，沉积工艺包括第一沉积，随后是含氢等离子体处理，第二次沉积，然后进行含氢等离子体处理，然后进行第三次沉积，然后是含氢 然后进行含氧等离子体处理以产生化学计量的四元膜。 重复循环过程，直到达到所需的总膜厚度。 本发明的方法用于制造高k电介质膜，铁电体膜，压电膜和其它复合氧化物。
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公开(公告)号：US20120202353A1
公开(公告)日：2012-08-09
申请号：US13449241
申请日：2012-04-17
IPC分类号： H01L21/30
CPC分类号： C23C16/34 , C23C16/45523 , C23C16/507
摘要： A process to deposit a thin film by chemical vapor deposition includes evacuating a chamber of gases; exposing a device to a gaseous first reactant, wherein the first reactant deposits on the device to form the thin film having a plurality of monolayers in thickness; evacuating the chamber of gases; exposing the device, coated with the first reactant, to a gaseous second reactant under a plasma treatment, wherein the thin film is treated by the first reactant; and repeating the previous steps.
摘要翻译： 通过化学气相沉积沉积薄膜的方法包括抽空气体室; 将装置暴露于气态第一反应物，其中所述第一反应物沉积在所述装置上以形成具有多个单层厚度的薄膜; 排空气体室; 在等离子体处理下将涂覆有第一反应物的装置暴露于气态第二反应物，其中薄膜由第一反应物处理; 并重复前面的步骤。
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公开(公告)号：US20100285237A1
公开(公告)日：2010-11-11
申请号：US12783431
申请日：2010-05-19
IPC分类号： H05H1/00
CPC分类号： C23C16/34 , C23C16/45523 , C23C16/507
摘要： A hybrid deposition process of CVD and ALD, called NanoLayer Deposition (NLD) is provided. The NLD process is a cyclic sequential deposition process, comprising introducing a first plurality of precursors to deposit a thin layer with the deposition process not self limiting, followed by introducing a second plurality of precursors for plasma treating the thin deposited layer. The plasma can be isotropic, anisotropic, or a combination of isotropic and anisotropic to optimize the effectiveness of the treatment of the thin deposited layers.
摘要翻译： 提供了称为NanoLayer沉积（NLD）的CVD和ALD的混合沉积工艺。 NLD工艺是循环顺序沉积工艺，包括引入第一多个前体以沉积具有沉积过程而不是自限制的薄层，随后引入第二多个前体用于等离子体处理薄的沉积层。 等离子体可以是各向同性的，各向异性的，或各向同性和各向异性的组合，以优化薄沉积层的处理的有效性。
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