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公开(公告)号：US20090163042A1
公开(公告)日：2009-06-25
申请号：US12339671
申请日：2008-12-19
申请人： Ming-Kuei (Michael) Tseng , Norman Tam , Yoshitaka Yokota , Agus Tjandra , Robert Navasca , Medhran Behdjat , Sundar Ramamurthy , Kedarnath Sangam , Alexander N. Lerner
发明人： Ming-Kuei (Michael) Tseng , Norman Tam , Yoshitaka Yokota , Agus Tjandra , Robert Navasca , Medhran Behdjat , Sundar Ramamurthy , Kedarnath Sangam , Alexander N. Lerner
IPC分类号： H01L21/263 , A61L2/04
CPC分类号： H01L21/67115 , F27D7/06 , H01L21/67017 , H01L21/67098
摘要： Embodiments of the present invention provide apparatus and method for improving gas distribution during thermal processing. One embodiment of the present invention provides an apparatus for processing a substrate comprising a chamber body defining a processing volume, a substrate support disposed in the processing volume, wherein the substrate support is configured to support and rotate the substrate, a gas inlet assembly coupled to an inlet of the chamber body and configured to provide a first gas flow to the processing volume, and an exhaust assembly coupled to an outlet of the chamber body, wherein the gas inlet assembly and the exhaust assembly are disposed on opposite sides of the chamber body, and the exhaust assembly defines an exhaust volume configured to extend the processing volume.
摘要翻译： 本发明的实施例提供了用于改善热处理期间气体分布的装置和方法。 本发明的一个实施例提供了一种用于处理衬底的装置，其包括限定处理体积的室主体，设置在处理容积中的衬底支撑件，其中衬底支撑件构造成支撑和旋转衬底;气体入口组件， 室主体的入口并且被配置为向处理容积提供第一气流，以及联接到室主体的出口的排气组件，其中气体入口组件和排气组件设置在室主体的相对侧上 ，并且排气组件限定了被配置为延长处理量的排气量。
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公开(公告)号：US08608853B2
公开(公告)日：2013-12-17
申请号：US13296531
申请日：2011-11-15
申请人： Ming-Kuei (Michael) Tseng , Norman Tam , Yoshitaka Yokota , Agus Tjandra , Robert Navasca , Mehran Behdjat , Sundar Ramamurthy , Kedarnath Sangam , Alexander N. Lerner
发明人： Ming-Kuei (Michael) Tseng , Norman Tam , Yoshitaka Yokota , Agus Tjandra , Robert Navasca , Mehran Behdjat , Sundar Ramamurthy , Kedarnath Sangam , Alexander N. Lerner
IPC分类号： C23C16/00
CPC分类号： H01L21/67115 , F27D7/06 , H01L21/67017 , H01L21/67098
摘要： Embodiments of the present invention provide apparatus and method for improving gas distribution during thermal processing. One embodiment of the present invention provides an apparatus for processing a substrate comprising a chamber body defining a processing volume, a substrate support disposed in the processing volume, wherein the substrate support is configured to support and rotate the substrate, a gas inlet assembly coupled to an inlet of the chamber body and configured to provide a first gas flow to the processing volume, and an exhaust assembly coupled to an outlet of the chamber body, wherein the gas inlet assembly and the exhaust assembly are disposed on opposite sides of the chamber body, and the exhaust assembly defines an exhaust volume configured to extend the processing volume.
摘要翻译： 本发明的实施例提供了用于改善热处理期间气体分布的装置和方法。 本发明的一个实施例提供了一种用于处理衬底的装置，其包括限定处理体积的室主体，设置在处理容积中的衬底支撑件，其中衬底支撑件构造成支撑和旋转衬底;气体入口组件， 室主体的入口并且被配置为向处理容积提供第一气流，以及联接到室主体的出口的排气组件，其中气体入口组件和排气组件设置在室主体的相对侧上 ，并且排气组件限定了被配置为延长处理量的排气量。
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公开(公告)号：US20120058648A1
公开(公告)日：2012-03-08
申请号：US13296531
申请日：2011-11-15
申请人： Ming-Kuei (Michael) Tseng , Norman Tam , Yoshitaka Yokota , Agus Tjandra , Robert Navasca , Mehran Behdjat , Sundar Ramamurthy , Kedarnath Sangam , Alexander N. Lerner
发明人： Ming-Kuei (Michael) Tseng , Norman Tam , Yoshitaka Yokota , Agus Tjandra , Robert Navasca , Mehran Behdjat , Sundar Ramamurthy , Kedarnath Sangam , Alexander N. Lerner
CPC分类号： H01L21/67115 , F27D7/06 , H01L21/67017 , H01L21/67098
摘要： Embodiments of the present invention provide apparatus and method for improving gas distribution during thermal processing. One embodiment of the present invention provides an apparatus for processing a substrate comprising a chamber body defining a processing volume, a substrate support disposed in the processing volume, wherein the substrate support is configured to support and rotate the substrate, a gas inlet assembly coupled to an inlet of the chamber body and configured to provide a first gas flow to the processing volume, and an exhaust assembly coupled to an outlet of the chamber body, wherein the gas inlet assembly and the exhaust assembly are disposed on opposite sides of the chamber body, and the exhaust assembly defines an exhaust volume configured to extend the processing volume.
摘要翻译： 本发明的实施例提供了用于改善热处理期间气体分布的装置和方法。 本发明的一个实施例提供了一种用于处理衬底的装置，其包括限定处理体积的室主体，设置在处理容积中的衬底支撑件，其中衬底支撑件构造成支撑和旋转衬底;气体入口组件， 室主体的入口并且被配置为向处理容积提供第一气流，以及联接到室主体的出口的排气组件，其中气体入口组件和排气组件设置在室主体的相对侧上 ，并且排气组件限定了被配置为延长处理量的排气量。
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公开(公告)号：US08056500B2
公开(公告)日：2011-11-15
申请号：US12339671
申请日：2008-12-19
申请人： Ming-Kuei (Michael) Tseng , Norman Tam , Yoshitaka Yokota , Agus Tjandra , Robert Navasca , Mehran Behdjat , Sundar Ramamurthy , Kedarnath Sangam , Alexander N. Lerner
发明人： Ming-Kuei (Michael) Tseng , Norman Tam , Yoshitaka Yokota , Agus Tjandra , Robert Navasca , Mehran Behdjat , Sundar Ramamurthy , Kedarnath Sangam , Alexander N. Lerner
IPC分类号： B05B5/00
CPC分类号： H01L21/67115 , F27D7/06 , H01L21/67017 , H01L21/67098
摘要： Embodiments of the present invention provide apparatus and method for improving gas distribution during thermal processing. One embodiment of the present invention provides an apparatus for processing a substrate comprising a chamber body defining a processing volume, a substrate support disposed in the processing volume, wherein the substrate support is configured to support and rotate the substrate, a gas inlet assembly coupled to an inlet of the chamber body and configured to provide a first gas flow to the processing volume, and an exhaust assembly coupled to an outlet of the chamber body, wherein the gas inlet assembly and the exhaust assembly are disposed on opposite sides of the chamber body, and the exhaust assembly defines an exhaust volume configured to extend the processing volume.
摘要翻译： 本发明的实施例提供了用于改善热处理期间气体分布的装置和方法。 本发明的一个实施例提供了一种用于处理衬底的装置，其包括限定处理体积的室主体，设置在处理容积中的衬底支撑件，其中衬底支撑件构造成支撑和旋转衬底;气体入口组件， 室主体的入口并且被配置为向处理容积提供第一气流，以及联接到室主体的出口的排气组件，其中气体入口组件和排气组件设置在室主体的相对侧上 ，并且排气组件限定了被配置为延长处理量的排气量。
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