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    Electron beam welding of large vacuum chamber body having a high emissivity coating
    1.
    发明授权
    Electron beam welding of large vacuum chamber body having a high emissivity coating 有权
    具有高发射率涂层的大型真空室体的电子束焊接

    公开(公告)号：US08528762B2

    公开(公告)日：2013-09-10

    申请号：US12534534

    申请日：2009-08-03

    Applicant: Shinichi Kurita ,  Mehran Behdjat ,  Makoto Inagawa

    Inventor： Shinichi Kurita ,  Mehran Behdjat ,  Makoto Inagawa

    IPC: B65D6/28

    CPC classification number: B65D7/06 ,  B23K15/0006 ,  B65D7/38 ,  H01L21/67379

    Abstract: Embodiments disclosed herein relate to a large vacuum chamber body that has been welded together. The chamber body may have a high emissivity coating on at least one surface therein. Due to the large size of the chamber body, the chamber body may be formed by welding several pieces together rather than forging the body from a single piece of metal. The pieces may be welded together at a location spaced from the corner of the body, which may be under the greatest stress during evacuation, to ensure that the weld, which may be the weakest point in the body, does not fail. At least one surface of the chamber body may be coated with a high emissivity coating to aid in heat transfer from incoming, heated substrates. The high emissivity coating may increase substrate throughput by lowering the time that may be needed to reduce the substrate temperature.

    Abstract translation: 本文公开的实施例涉及已经焊接在一起的大型真空室主体。 腔体可以在其中的至少一个表面上具有高发射率涂层。 由于腔室主体的尺寸较大，可以通过将多个部件焊接在一起而不是从单个金属件锻造主体而形成腔体。 这些部件可以在与身体的角部间隔开的位置处被焊接在一起，该位置在排空期间可能处于最大的应力下，以确保可能是身体中最弱点的焊缝不会失效。 室主体的至少一个表面可以涂覆有高发射率涂层，以帮助来自加热的基底的热传递。 高发射率涂层可以通过降低降低衬底温度所需的时间来增加衬底通量。

    Water cooled gas injector
    2.
    发明授权
    Water cooled gas injector 失效
    水冷气体注射器

    公开(公告)号：US08409353B2

    公开(公告)日：2013-04-02

    申请号：US13277385

    申请日：2011-10-20

    Applicant: Yoshitaka Yokota ,  Sundar Ramamurthy ,  Vedapuram Achutharaman ,  Cory Czarnik ,  Mehran Behdjat ,  Christopher Olsen

    Inventor： Yoshitaka Yokota ,  Sundar Ramamurthy ,  Vedapuram Achutharaman ,  Cory Czarnik ,  Mehran Behdjat ,  Christopher Olsen

    IPC: C23C16/00

    CPC classification number: H01L21/67115 ,  H01L21/0214 ,  H01L21/02238 ,  H01L21/02249 ,  H01L21/02255 ,  H01L21/31658 ,  H01L21/31662 ,  H01L21/67109

    Abstract: A method and apparatus for oxidizing materials used in semiconductor integrated circuits, for example, for oxidizing silicon to form a dielectric gate. An ozonator is capable of producing a stream of least 70% ozone. The ozone passes into an RTP chamber through a water-cooled injector projecting into the chamber. Other gases such as hydrogen to increase oxidation rate, diluent gas such as nitrogen or O2, enter the chamber through another inlet. The chamber is maintained at a low pressure below 20 Torr and the substrate is advantageously maintained at a temperature less than 800° C. Alternatively, the oxidation may be performed in an LPCVD chamber including a pedestal heater and a showerhead gas injector in opposition to the pedestal.

    Abstract translation: 一种用于半导体集成电路中用于氧化材料的方法和装置，例如用于氧化硅以形成电介质栅极。 臭氧发生器能够产生至少70％的臭氧流。 臭氧通过水冷却的注射器进入室内， 其他气体如氢气以提高氧化速率，稀释气体如氮气或O2通过另一个入口进入腔室。 该室保持在低于20托的低压，并且有利地将基底保持在低于800℃的温度。或者，氧化可以在包括基座加热器和喷头气体喷射器的LPCVD室中执行， 座。

    Load lock chamber for large area substrate processing system
    3.
    发明授权
    Load lock chamber for large area substrate processing system 有权
    负载锁定室用于大面积基板处理系统

    公开(公告)号：US08070408B2

    公开(公告)日：2011-12-06

    申请号：US12199341

    申请日：2008-08-27

    Applicant: Mehran Behdjat ,  Shinichi Kurita ,  Makoto Inagawa ,  Suhail Anwar

    Inventor： Mehran Behdjat ,  Shinichi Kurita ,  Makoto Inagawa ,  Suhail Anwar

    IPC: H01L21/677

    CPC classification number: H01L21/67201 ,  H01L21/67236

    Abstract: The present invention generally includes a load lock chamber for transferring large area substrates into a vacuum processing chamber. The load lock chamber may have one or more separate, environmentally isolated environments. Each processing environment may have a plurality exhaust ports for drawing a vacuum. The exhaust ports may be located at the corners of the processing environment. When a substrate is inserted into the load lock chamber from the factory interface, the environment may need to be evacuated. Due to the exhaust ports located at the corners of the environment, any particles or contaminants that may be present may be pulled to the closest corner and out of the load lock chamber without being pulled across the substrate. Thus, substrate contamination may be reduced.

    Abstract translation: 本发明通常包括用于将大面积基板输送到真空处理室中的负载锁定室。 负载锁定室可以具有一个或多个单独的环境隔离环境。 每个处理环境可以具有用于抽真空的多个排气口。 排气口可以位于处理环境的拐角处。 当基板从出厂界面插入加载锁定室时，环境可能需要抽真空。 由于位于环境角落处的排气口，可能存在的任何颗粒或污染物可被拉到最靠近的角落并且不被拉过载体锁定室。 因此，可能降低衬底污染。

    LOAD LOCK CHAMBER FOR LARGE AREA SUBSTRATE PROCESSING SYSTEM
    4.
    发明申请
    LOAD LOCK CHAMBER FOR LARGE AREA SUBSTRATE PROCESSING SYSTEM 有权
    大面积底板加工系统的负载锁仓

    公开(公告)号：US20100054905A1

    公开(公告)日：2010-03-04

    申请号：US12199341

    申请日：2008-08-27

    Applicant: MEHRAN BEHDJAT ,  SHINICHI KURITA ,  MAKOTO INAGAWA ,  SUHAIL ANWAR

    Inventor： MEHRAN BEHDJAT ,  SHINICHI KURITA ,  MAKOTO INAGAWA ,  SUHAIL ANWAR

    IPC: H01L21/677

    CPC classification number: H01L21/67201 ,  H01L21/67236

    Abstract: The present invention generally includes a load lock chamber for transferring large area substrates into a vacuum processing chamber. The load lock chamber may have one or more separate, environmentally isolated environments. Each processing environment may have a plurality exhaust ports for drawing a vacuum. The exhaust ports may be located at the corners of the processing environment. When a substrate is inserted into the load lock chamber from the factory interface, the environment may need to be evacuated. Due to the exhaust ports located at the corners of the environment, any particles or contaminants that may be present may be pulled to the closest corner and out of the load lock chamber without being pulled across the substrate. Thus, substrate contamination may be reduced.

    Abstract translation: 本发明通常包括用于将大面积基板输送到真空处理室中的负载锁定室。 负载锁定室可以具有一个或多个单独的环境隔离环境。 每个处理环境可以具有用于抽真空的多个排气口。 排气口可以位于处理环境的拐角处。 当基板从出厂界面插入加载锁定室时，环境可能需要抽真空。 由于位于环境角落处的排气口，可能存在的任何颗粒或污染物可被拉到最靠近的角落并且不被拉过载体锁定室。 因此，可能降低衬底污染。

    Water cooled gas injector
    8.
    发明申请
    Water cooled gas injector 失效
    水冷气体注射器

    公开(公告)号：US20120031332A1

    公开(公告)日：2012-02-09

    申请号：US13277385

    申请日：2011-10-20

    Applicant: Yoshitaka Yokota ,  Sundar Ramamurthy ,  Vedapuram Achutharaman ,  Cory Czarnik ,  Mehran Behdjat ,  Christopher Olsen

    Inventor： Yoshitaka Yokota ,  Sundar Ramamurthy ,  Vedapuram Achutharaman ,  Cory Czarnik ,  Mehran Behdjat ,  Christopher Olsen

    IPC: C23C16/00 ,  H01L21/31

    CPC classification number: H01L21/67115 ,  H01L21/0214 ,  H01L21/02238 ,  H01L21/02249 ,  H01L21/02255 ,  H01L21/31658 ,  H01L21/31662 ,  H01L21/67109

    Abstract: A method and apparatus for oxidizing materials used in semiconductor integrated circuits, for example, for oxidizing silicon to form a dielectric gate. An ozonator is capable of producing a stream of least 70% ozone. The ozone passes into an RTP chamber through a water-cooled injector projecting into the chamber. Other gases such as hydrogen to increase oxidation rate, diluent gas such as nitrogen or O2, enter the chamber through another inlet. The chamber is maintained at a low pressure below 20 Torr and the substrate is advantageously maintained at a temperature less than 800° C. Alternatively, the oxidation may be performed in an LPCVD chamber including a pedestal heater and a showerhead gas injector in opposition to the pedestal.

    Abstract translation: 一种用于半导体集成电路中用于氧化材料的方法和装置，例如用于氧化硅以形成电介质栅极。 臭氧发生器能够产生至少70％的臭氧流。 臭氧通过水冷却的注射器进入室内， 其他气体如氢气以提高氧化速率，稀释气体如氮气或O2通过另一个入口进入腔室。 该室保持在低于20托的低压，并且有利地将基底保持在低于800℃的温度。或者，氧化可以在包括基座加热器和喷头气体喷射器的LPCVD室中执行， 座。

    ELECTRON BEAM WELDING OF LARGE VACUUM CHAMBER BODY HAVING A HIGH EMISSIVITY COATING
    9.
    发明申请
    ELECTRON BEAM WELDING OF LARGE VACUUM CHAMBER BODY HAVING A HIGH EMISSIVITY COATING 有权
    具有高电感涂层的大型真空室体的电子束焊接

    公开(公告)号：US20100122982A1

    公开(公告)日：2010-05-20

    申请号：US12534534

    申请日：2009-08-03

    Applicant: SHINICHI KURITA ,  Mehran Behdjat ,  Makoto Inagawa

    Inventor： SHINICHI KURITA ,  Mehran Behdjat ,  Makoto Inagawa

    IPC: B65D6/28 ,  B23K15/00

    CPC classification number: B65D7/06 ,  B23K15/0006 ,  B65D7/38 ,  H01L21/67379

    Abstract: Embodiments disclosed herein relate to a large vacuum chamber body that has been welded together. The chamber body may have a high emissivity coating on at least one surface therein. Due to the large size of the chamber body, the chamber body may be formed by welding several pieces together rather than forging the body from a single piece of metal. The pieces may be welded together at a location spaced from the corner of the body, which may be under the greatest stress during evacuation, to ensure that the weld, which may be the weakest point in the body, does not fail. At least one surface of the chamber body may be coated with a high emissivity coating to aid in heat transfer from incoming, heated substrates. The high emissivity coating may increase substrate throughput by lowering the time that may be needed to reduce the substrate temperature.

    Abstract translation: 本文公开的实施例涉及已经焊接在一起的大型真空室主体。 腔体可以在其中的至少一个表面上具有高发射率涂层。 由于腔室主体的尺寸较大，可以通过将多个部件焊接在一起而不是从单个金属件锻造主体而形成腔体。 这些部件可以在与身体的角部间隔开的位置处被焊接在一起，该位置在排空期间可能处于最大的应力下，以确保可能是身体中最弱点的焊缝不会失效。 室主体的至少一个表面可以涂覆有高发射率涂层，以帮助来自加热的基底的热传递。 高发射率涂层可以通过降低降低衬底温度所需的时间来增加衬底通量。

    Particle control in laser processing systems
    10.
    发明授权
    Particle control in laser processing systems 有权
    激光加工系统中的粒子控制

    公开(公告)号：US09579750B2

    公开(公告)日：2017-02-28

    申请号：US13619749

    申请日：2012-09-14

    Applicant: Aaron Muir Hunter ,  Mehran Behdjat ,  Bruce E. Adams

    Inventor： Aaron Muir Hunter ,  Mehran Behdjat ,  Bruce E. Adams

    IPC: B23K26/00 ,  B23K26/12 ,  A21B2/00 ,  B23K26/14

    CPC classification number: B23K26/127 ,  B23K26/142 ,  B23K26/1464

    Abstract: The present invention generally relates to a laser processing systems for thermally processing substrates. The laser processing systems include a shield disposed between an energy source of the laser processing system and a substrate which is to be thermally processed. The shield includes an optically transparent window disposed adjacent to a cavity within the shield. The optically transparent window allows annealing energy to pass therethrough and to illuminate the substrate. The shield also includes one or more gas inlets and one or more gas outlets for introducing and removing a purge gas from the cavity within the shield. The purge gas is utilized to remove volatized or ablated components during thermal processing, and to provide a gas of predetermined composition, such as oxygen-free, to the thermally processed area.

    Abstract translation: 本发明一般涉及一种用于热处理衬底的激光加工系统。 激光处理系统包括设置在激光加工系统的能量源和待热处理的基板之间的屏蔽。 屏蔽件包括邻近屏蔽件内的空腔布置的光学透明窗口。 光学透明窗口允许退火能量通过并照射基板。 屏蔽还包括一个或多个气体入口和一个或多个气体出口，用于从罩内的空腔引入和去除净化气体。 吹扫气体用于在热处理过程中除去挥发的或消融的组分，并且向热处理区域提供诸如无氧的预定组成的气体。

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