Method for Fabricating a Semiconductor Component With a Specifically Doped Surface Region Using Out-Diffusion, and Corresponding Semiconductor Component
    1.
    发明申请
    Method for Fabricating a Semiconductor Component With a Specifically Doped Surface Region Using Out-Diffusion, and Corresponding Semiconductor Component 审中-公开
    使用外扩散制造具有特定掺杂表面区域的半导体部件的方法和相应的半导体部件

    公开(公告)号:US20090205705A1

    公开(公告)日:2009-08-20

    申请号:US12225505

    申请日:2007-03-20

    IPC分类号: H01L31/04 H01L21/20 H01L29/36

    摘要: The invention proposes a method for producing a semiconductor component, such as a thin-layer solar cell. The method involves providing a doped semiconductor carrier substrate (1), producing a separating layer (2), for example a porous layer, on one surface of the semiconductor carrier substrate, depositing a doped semiconductor layer (3) over the separating layer and detaching the deposited semiconductor layer from the semiconductor carrier substrate. In line with the invention, process parameters such as the process temperature and time are chosen during the manufacturing process such that dopants can diffuse from the separation layer into the deposited semiconductor layer in order to form a specifically doped surface area (4). Specific use of solid-state diffusion makes it possible to simplify the manufacturing process over conventional fabrication methods in this manner.

    摘要翻译: 本发明提出一种半导体元件的制造方法,例如薄层太阳能电池。 该方法包括提供掺杂半导体载体衬底(1),在半导体载体衬底的一个表面上产生例如多孔层的分离层(2),在分离层上沉积掺杂的半导体层(3)和分离 来自半导体载体衬底的沉积的半导体层。 根据本发明,在制造过程中选择诸如工艺温度和时间的工艺参数,使得掺杂剂可以从分离层扩散到沉积的半导体层中,以便形成特别掺杂的表面区域(4)。 具体使用固态扩散使得可以以这种方式简化与常规制造方法相比的制造工艺。

    METHOD FOR FORMING THIN SEMICONDUCTOR LAYER SUBSTRATES FOR MANUFACTURING SOLAR CELLS
    3.
    发明申请
    METHOD FOR FORMING THIN SEMICONDUCTOR LAYER SUBSTRATES FOR MANUFACTURING SOLAR CELLS 审中-公开
    形成薄膜半导体层的方法制造太阳能电池

    公开(公告)号:US20120282726A1

    公开(公告)日:2012-11-08

    申请号:US13509567

    申请日:2010-11-11

    IPC分类号: H01L31/18

    摘要: Described is a method for forming thin semiconductor layer substrates for manufacturing solar cells, in which method in a provided semiconductor substrate alternately macroporous layers of low macroporosity and etched-away layers can be formed by electrochemical etching. The etched-away layers separate adjacent macroporous layers so that these are preferably self-supporting. In this arrangement an edge region of the semiconductor substrate, which edge region encompasses the macroporous layers at least in part, remains non-etched and is thus used for mechanically stabilizing the encompassed lightly-macroporous layers connected to it. The multilayer stack produced in this manner can subsequently, in a joint fluid process step, as an entity be subjected to further processing steps, for example can be coated with a passivating oxide. Subsequently, the macroporous layers can be separated, successively, from the stabilizing edge region of the semiconductor substrate, wherein a mechanical connection between the macroporous layer and the non-porous edge region is interrupted. Prior to tearing off the respective uppermost layer, processes that have a single-sided effect can be applied. In this way a multitude of thin semiconductor layer substrates in the form of macroporous layers including good surface passivation and a reflection-reducing surface texture can be produced with only a few process steps.

    摘要翻译: 描述了一种用于形成用于制造太阳能电池的薄半导体层基板的方法,其中在所提供的半导体基板中的方法可以通过电化学蚀刻形成交替的大孔隙和蚀刻掉的大孔层。 蚀刻掉的层分隔相邻的大孔层,使得它们优选是自支撑的。 在这种布置中,半导体衬底的边缘区域至少部分地包围大孔层的边缘区域保持未蚀刻,因此用于机械地稳定与其连接的包围的轻微大孔层。 以这种方式生产的多层叠层随后可以在联合流体工艺步骤中作为实体进行进一步的加工步骤,例如可以用钝化氧化物涂覆。 随后,可以从半导体衬底的稳定边缘区域依次分离大孔层,其中大孔层和非多孔边缘区域之间的机械连接被中断。 在撕开相应的最上层之前,可以应用具有单面效应的工艺。 以这种方式,可以仅通过几个工艺步骤来制造大量层的形式的包括良好的表面钝化和减少反射的表面纹理的大量薄的半导体层衬底。

    Method for producing layered structures on a substrate, substrate and semiconductor components produced according to said method
    4.
    发明授权
    Method for producing layered structures on a substrate, substrate and semiconductor components produced according to said method 有权
    在根据所述方法制造的基板,基板和半导体部件上制造层状结构的方法

    公开(公告)号:US06645833B2

    公开(公告)日:2003-11-11

    申请号:US09447000

    申请日:2000-04-07

    申请人: Rolf Brendel

    发明人: Rolf Brendel

    IPC分类号: H01L2130

    摘要: The invention relates to a method of manufacturing layer-like structures in which a material layer having hollow cavities, preferably a porous material layer, is produced on or out of a substrate consisting, for example, of monocrystalline p-type or n-type Si and in which the layer-like structure, or a part of it, is subsequently provided on the cavity exhibiting or porous material layer. The layer-like structure, or a part of it, is subsequently separated from the substrate using the layer having the hollow cavities, or porous layer, as a point of desired separation, for example through the production of a mechanical strain within or at a boundary surface of the cavity exhibiting or porous layer. The method is characterized in that the surface of the substrate is structured prior to the production of the porous layer, or in that the surface of the porous layer is structured.

    摘要翻译: 本发明涉及一种制造层状结构的方法,其中具有中空腔的材料层,优选多孔材料层,在例如单晶p型或n型Si 并且其中层状结构或其一部分随后设置在呈现或多孔材料层的空腔上。 随后,使用具有中空空腔或多孔层的层作为所需分离点,例如通过在内部或在其上产生机械应变将层状结构或其一部分与基底分离 空腔的边界表面或多孔层。 该方法的特征在于,在制造多孔层之前或者在多孔层的表面上构造衬底的表面。