摘要:
The invention proposes a method for producing a semiconductor component, such as a thin-layer solar cell. The method involves providing a doped semiconductor carrier substrate (1), producing a separating layer (2), for example a porous layer, on one surface of the semiconductor carrier substrate, depositing a doped semiconductor layer (3) over the separating layer and detaching the deposited semiconductor layer from the semiconductor carrier substrate. In line with the invention, process parameters such as the process temperature and time are chosen during the manufacturing process such that dopants can diffuse from the separation layer into the deposited semiconductor layer in order to form a specifically doped surface area (4). Specific use of solid-state diffusion makes it possible to simplify the manufacturing process over conventional fabrication methods in this manner.
摘要:
The invention relates to a method for metallizing and connecting solar cell substrates and to a photovoltaic module made of several metallized solar cells that are electrically connected to one another. According to the invention, a solar cell substrate, in which second metal layers forming electrical metal contacts are optionally provided, is attached to a carrier substrate, on the surface of which at least one first metal layer is formed in a suitable pattern. By localized irradiation of the metal layer with laser radiation through the solar cell substrate or the carrier substrate, energy is introduced such that the metal layer is heated by absorbed laser radiation for an irreversible bonding to the adjacent surface of the solar cell substrate. By the laser bonding of the metal layer on the carrier substrate to the solar cell substrate, solar cells can be connected to form a photovoltaic module.
摘要:
Described is a method for forming thin semiconductor layer substrates for manufacturing solar cells, in which method in a provided semiconductor substrate alternately macroporous layers of low macroporosity and etched-away layers can be formed by electrochemical etching. The etched-away layers separate adjacent macroporous layers so that these are preferably self-supporting. In this arrangement an edge region of the semiconductor substrate, which edge region encompasses the macroporous layers at least in part, remains non-etched and is thus used for mechanically stabilizing the encompassed lightly-macroporous layers connected to it. The multilayer stack produced in this manner can subsequently, in a joint fluid process step, as an entity be subjected to further processing steps, for example can be coated with a passivating oxide. Subsequently, the macroporous layers can be separated, successively, from the stabilizing edge region of the semiconductor substrate, wherein a mechanical connection between the macroporous layer and the non-porous edge region is interrupted. Prior to tearing off the respective uppermost layer, processes that have a single-sided effect can be applied. In this way a multitude of thin semiconductor layer substrates in the form of macroporous layers including good surface passivation and a reflection-reducing surface texture can be produced with only a few process steps.
摘要:
The invention relates to a method of manufacturing layer-like structures in which a material layer having hollow cavities, preferably a porous material layer, is produced on or out of a substrate consisting, for example, of monocrystalline p-type or n-type Si and in which the layer-like structure, or a part of it, is subsequently provided on the cavity exhibiting or porous material layer. The layer-like structure, or a part of it, is subsequently separated from the substrate using the layer having the hollow cavities, or porous layer, as a point of desired separation, for example through the production of a mechanical strain within or at a boundary surface of the cavity exhibiting or porous layer. The method is characterized in that the surface of the substrate is structured prior to the production of the porous layer, or in that the surface of the porous layer is structured.