公开(公告)号：US07491639B2

公开(公告)日：2009-02-17

申请号：US10539280

申请日：2003-12-15

申请人： Viet Nguyen Hoang ,  Dirk Jan Gravesteijn ,  Romano Julma Oscar Maria Hoofman

发明人： Viet Nguyen Hoang ,  Dirk Jan Gravesteijn ,  Romano Julma Oscar Maria Hoofman

IPC分类号： H01L21/4763

CPC分类号： H01L21/76828 ,  H01L21/76807 ,  H01L2221/1026

摘要： The invention relates to the manufacture of a semiconductor device (10) with a semiconductor body (1) and a substrate (2) and comprising at least one semiconductor element (3), which semiconductor device is equipped with at least one connection region (4) and a superjacent strip-shaped connection conductor (5) which is connected to the connection region, which connection region and connection conductor are both recessed in a dielectric, and a dielectric region (6) of a first material is provided on the semiconductor body (1) at the location of the connection region (4) to be formed, after which the dielectric region (6) is coated with a dielectric layer (7) of a second material that differs from the first material, which dielectric layer is provided, at the location of the strip-shaped connection conductor (5) to be formed, with a strip-shaped recess (7A) which overlaps the dielectric region (6) and extends up to said dielectric region, and after the formation of the recess (7A) and the removal of the dielectric region (6), connection region (4) is formed by depositing an electroconductive material in the space (6A) created by the removal of the dielectric region (6), and the connection conductor (5) is formed by depositing an electroconductive material in the recess (7A). According to the invention, for the first material use is made of an organic material, and for the second material use is made of a material having a higher decomposition temperature than the organic material, and the dielectric region (6) is removed by heating it at a temperature above the decomposition temperature of the organic material yet below the decomposition temperature of the second material. A method according to the invention is very simple and, due to an optimal choice for the second material, may result in a high planarity of the device (10) obtained. For the dielectric region (4), use is preferably made of a photoresist, and for the dielectric layer (7), use is preferably made of a liquid material such as a SILK or SOG material which is converted to the solid state by heating.

公开(公告)号：US08367552B2

公开(公告)日：2013-02-05

申请号：US10526422

申请日：2003-08-04

申请人： Roel Daamen ,  Viet Nguyen Hoang ,  Romano Julma Oscar Maria Hoofman ,  Greja Johanna Adriana Maria Verheijden

发明人： Roel Daamen ,  Viet Nguyen Hoang ,  Romano Julma Oscar Maria Hoofman ,  Greja Johanna Adriana Maria Verheijden

IPC分类号： H01L21/302 ,  H01L21/461

CPC分类号： H01L21/7684 ,  H01L21/7688

摘要： The present invention relates to a method for fabrication of in-laid metal interconnects. The method comprises the steps of providing a substrate with a dielectric material on top thereof, depositing a protection layer on top of the dielectric material, depositing a sacrificial layer on top of the protection layer, the sacrificial layer having a mechanical strength that is lower than the mechanical strength of the protection layer, making an opening) through the sacrificial layer, through the protection layer and into the dielectric material, depositing a barrier layer in the opening and on the sacrificial layer, depositing metal material on the barrier layer, the metal material filling the opening, removing portions of the metal material existing beyond the opening by means of polishing, and removing the barrier layer and the sacrificial layer in one polishing step.

摘要翻译： 本发明涉及一种内置金属互连的制造方法。 该方法包括以下步骤：在其顶部提供介电材料的基底，在电介质材料的顶部上沉积保护层，在保护层的顶部上沉积牺牲层，牺牲层的机械强度低于 保护层的机械强度，形成开口）穿过保护层并进入电介质材料，在开口和牺牲层上沉积阻挡层，在阻挡层上沉积金属材料，金属 填充开口的材料，通过抛光去除存在于开口之外的金属材料的部分，以及在一个抛光步骤中去除阻挡层和牺牲层。