公开(公告)号：US08575674B2

公开(公告)日：2013-11-05

申请号：US13264460

申请日：2010-04-15

申请人： Hiroaki Sukegawa ,  Koichiro Inomata ,  Rong Shan ,  Masaya Kodzuka ,  Kazuhiro Hono ,  Takao Furubayashi ,  Wenhong Wang

发明人： Hiroaki Sukegawa ,  Koichiro Inomata ,  Rong Shan ,  Masaya Kodzuka ,  Kazuhiro Hono ,  Takao Furubayashi ,  Wenhong Wang

IPC分类号： H01L29/76

CPC分类号： H01L43/08 ,  B82Y10/00 ,  B82Y25/00 ,  B82Y40/00 ,  G01R33/098 ,  G11B5/3906 ,  G11B5/3909 ,  G11C11/161 ,  H01F10/1936 ,  H01F10/3254 ,  H01F41/307 ,  H01L43/10

摘要： Disclosed is a ferromagnetic tunnel junction structure which is characterized by having a tunnel barrier layer that comprises a non-magnetic material having a spinel structure. The ferromagnetic tunnel junction structure is also characterized in that the non-magnetic material is substantially MgAl2O4. The ferromagnetic tunnel junction is also characterized in that at least one of the ferromagnetic layers comprises a Co-based full Heusler alloy having an L21 or B2 structure. The ferromagnetic tunnel junction structure is also characterized in that the Co-based full Heusler alloy comprises a substance represented by the following formula: Co2FeAlxSi1-x (0≦x≦1). Also disclosed are a magnetoresistive element and a spintronics device, each of which utilizes the ferromagnetic tunnel junction structure and can achieve a high TMR value, that cannot be achieved by employing conventional tunnel barrier layers other than a MgO barrier.

摘要翻译： 公开了一种铁磁隧道结结构，其特征在于具有隧道势垒层，其包括具有尖晶石结构的非磁性材料。 铁磁隧道结结构的特征还在于非磁性材料基本上是MgAl 2 O 4。 铁磁隧道结的特征还在于至少一个铁磁层包括具有L21或B2结构的Co基全Heusler合金。 铁磁隧道结结构的特征还在于，基于Co的全Heusler合金包含由下式表示的物质：Co 2 FeAl x Si 1-x（0 @ x @ 1）。 还公开了一种磁阻元件和自旋电子学器件，其中每一个都利用铁磁隧道结结构并且可以实现高TMR值，这不能通过使用除MgO阻挡层之外的常规隧道势垒层来实现。

公开(公告)号：US20120091548A1

公开(公告)日：2012-04-19

申请号：US13264460

申请日：2010-04-15

申请人： Hiroaki Sukegawa ,  Koichiro Inomata ,  Rong Shan ,  Masaya Kodzuka ,  Kazuhiro Hono ,  Takao Furubayashi ,  Wenhong Wang

发明人： Hiroaki Sukegawa ,  Koichiro Inomata ,  Rong Shan ,  Masaya Kodzuka ,  Kazuhiro Hono ,  Takao Furubayashi ,  Wenhong Wang

IPC分类号： H01L29/82 ,  H01L21/02

CPC分类号： H01L43/08 ,  B82Y10/00 ,  B82Y25/00 ,  B82Y40/00 ,  G01R33/098 ,  G11B5/3906 ,  G11B5/3909 ,  G11C11/161 ,  H01F10/1936 ,  H01F10/3254 ,  H01F41/307 ,  H01L43/10

摘要： Disclosed is a ferromagnetic tunnel junction structure which is characterized by having a tunnel barrier layer that comprises a non-magnetic material having a spinel structure. The ferromagnetic tunnel junction structure is also characterized in that the non-magnetic material is substantially MgAl2O4. The ferromagnetic tunnel junction is also characterized in that at least one of the ferromagnetic layers comprises a Co-based full Heusler alloy having an L21 or B2 structure. The ferromagnetic tunnel junction structure is also characterized in that the Co-based full Heusler alloy comprises a substance represented by the following formula: Co2FeAlxSi1-x (0≦x≦1). Also disclosed are a magnetoresistive element and a spintronics device, each of which utilizes the ferromagnetic tunnel junction structure and can achieve a high TMR value, that cannot be achieved by employing conventional tunnel barrier layers other than a MgO barrier.

摘要翻译： 公开了一种铁磁隧道结结构，其特征在于具有隧道势垒层，其包括具有尖晶石结构的非磁性材料。 铁磁隧道结结构的特征还在于非磁性材料基本上是MgAl 2 O 4。 铁磁隧道结的特征还在于至少一个铁磁层包括具有L21或B2结构的Co基全Heusler合金。 铁磁隧道结结构的特征还在于，基于Co的全Heusler合金包含由下式表示的物质：Co2FeAlxSi1-x（0＆nlE; x＆nlE; 1）。 还公开了一种磁阻元件和自旋电子学器件，其中每一个都利用铁磁隧道结结构并且可以实现高TMR值，这不能通过使用除MgO阻挡层之外的常规隧道势垒层来实现。