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    Ferromagnetic tunnel junction structure, and magneto-resistive element and spintronics device each using same
    1.
    发明授权
    Ferromagnetic tunnel junction structure, and magneto-resistive element and spintronics device each using same 有权
    铁磁隧道结结构，以及磁阻元件和自旋电子器件，每个使用相同的

    公开(公告)号：US08575674B2

    公开(公告)日：2013-11-05

    申请号：US13264460

    申请日：2010-04-15

    申请人： Hiroaki Sukegawa ,  Koichiro Inomata ,  Rong Shan ,  Masaya Kodzuka ,  Kazuhiro Hono ,  Takao Furubayashi ,  Wenhong Wang

    发明人： Hiroaki Sukegawa ,  Koichiro Inomata ,  Rong Shan ,  Masaya Kodzuka ,  Kazuhiro Hono ,  Takao Furubayashi ,  Wenhong Wang

    IPC分类号： H01L29/76

    CPC分类号： H01L43/08 ,  B82Y10/00 ,  B82Y25/00 ,  B82Y40/00 ,  G01R33/098 ,  G11B5/3906 ,  G11B5/3909 ,  G11C11/161 ,  H01F10/1936 ,  H01F10/3254 ,  H01F41/307 ,  H01L43/10

    摘要： Disclosed is a ferromagnetic tunnel junction structure which is characterized by having a tunnel barrier layer that comprises a non-magnetic material having a spinel structure. The ferromagnetic tunnel junction structure is also characterized in that the non-magnetic material is substantially MgAl2O4. The ferromagnetic tunnel junction is also characterized in that at least one of the ferromagnetic layers comprises a Co-based full Heusler alloy having an L21 or B2 structure. The ferromagnetic tunnel junction structure is also characterized in that the Co-based full Heusler alloy comprises a substance represented by the following formula: Co2FeAlxSi1-x (0≦x≦1). Also disclosed are a magnetoresistive element and a spintronics device, each of which utilizes the ferromagnetic tunnel junction structure and can achieve a high TMR value, that cannot be achieved by employing conventional tunnel barrier layers other than a MgO barrier.

    摘要翻译： 公开了一种铁磁隧道结结构，其特征在于具有隧道势垒层，其包括具有尖晶石结构的非磁性材料。 铁磁隧道结结构的特征还在于非磁性材料基本上是MgAl 2 O 4。 铁磁隧道结的特征还在于至少一个铁磁层包括具有L21或B2结构的Co基全Heusler合金。 铁磁隧道结结构的特征还在于，基于Co的全Heusler合金包含由下式表示的物质：Co 2 FeAl x Si 1-x（0 @ x @ 1）。 还公开了一种磁阻元件和自旋电子学器件，其中每一个都利用铁磁隧道结结构并且可以实现高TMR值，这不能通过使用除MgO阻挡层之外的常规隧道势垒层来实现。

    FERROMAGNETIC TUNNEL JUNCTION STRUCTURE, AND MAGNETO-RESISTIVE ELEMENT AND SPINTRONICS DEVICE EACH USING SAME
    2.
    发明申请
    FERROMAGNETIC TUNNEL JUNCTION STRUCTURE, AND MAGNETO-RESISTIVE ELEMENT AND SPINTRONICS DEVICE EACH USING SAME 有权
    非线性隧道结构结构和磁阻电位元件和使用它们的磁电装置

    公开(公告)号：US20120091548A1

    公开(公告)日：2012-04-19

    申请号：US13264460

    申请日：2010-04-15

    申请人： Hiroaki Sukegawa ,  Koichiro Inomata ,  Rong Shan ,  Masaya Kodzuka ,  Kazuhiro Hono ,  Takao Furubayashi ,  Wenhong Wang

    发明人： Hiroaki Sukegawa ,  Koichiro Inomata ,  Rong Shan ,  Masaya Kodzuka ,  Kazuhiro Hono ,  Takao Furubayashi ,  Wenhong Wang

    IPC分类号： H01L29/82 ,  H01L21/02

    CPC分类号： H01L43/08 ,  B82Y10/00 ,  B82Y25/00 ,  B82Y40/00 ,  G01R33/098 ,  G11B5/3906 ,  G11B5/3909 ,  G11C11/161 ,  H01F10/1936 ,  H01F10/3254 ,  H01F41/307 ,  H01L43/10

    摘要： Disclosed is a ferromagnetic tunnel junction structure which is characterized by having a tunnel barrier layer that comprises a non-magnetic material having a spinel structure. The ferromagnetic tunnel junction structure is also characterized in that the non-magnetic material is substantially MgAl2O4. The ferromagnetic tunnel junction is also characterized in that at least one of the ferromagnetic layers comprises a Co-based full Heusler alloy having an L21 or B2 structure. The ferromagnetic tunnel junction structure is also characterized in that the Co-based full Heusler alloy comprises a substance represented by the following formula: Co2FeAlxSi1-x (0≦x≦1). Also disclosed are a magnetoresistive element and a spintronics device, each of which utilizes the ferromagnetic tunnel junction structure and can achieve a high TMR value, that cannot be achieved by employing conventional tunnel barrier layers other than a MgO barrier.

    摘要翻译： 公开了一种铁磁隧道结结构，其特征在于具有隧道势垒层，其包括具有尖晶石结构的非磁性材料。 铁磁隧道结结构的特征还在于非磁性材料基本上是MgAl 2 O 4。 铁磁隧道结的特征还在于至少一个铁磁层包括具有L21或B2结构的Co基全Heusler合金。 铁磁隧道结结构的特征还在于，基于Co的全Heusler合金包含由下式表示的物质：Co2FeAlxSi1-x（0＆nlE; x＆nlE; 1）。 还公开了一种磁阻元件和自旋电子学器件，其中每一个都利用铁磁隧道结结构并且可以实现高TMR值，这不能通过使用除MgO阻挡层之外的常规隧道势垒层来实现。

    FERROMAGNETIC TUNNEL JUNCTION STRUCTURE AND MAGNETORESISTIVE ELEMENT USING THE SAME
    3.
    发明申请
    FERROMAGNETIC TUNNEL JUNCTION STRUCTURE AND MAGNETORESISTIVE ELEMENT USING THE SAME 有权
    使用相同方式的电磁隧道结构和磁阻元件

    公开(公告)号：US20120112299A1

    公开(公告)日：2012-05-10

    申请号：US13321956

    申请日：2010-05-07

    申请人： Koichiro Inomata ,  Wenhong Wang ,  Hiroaki Sukegawa

    发明人： Koichiro Inomata ,  Wenhong Wang ,  Hiroaki Sukegawa

    IPC分类号： H01L29/82 ,  H01L21/02

    CPC分类号： G11B5/3909 ,  B82Y10/00 ,  B82Y25/00 ,  G01R33/098 ,  G11B5/3906 ,  G11B2005/3996 ,  H01F10/1936 ,  H01F10/3254 ,  H01L43/08 ,  H01L43/10

    摘要： For the present ferromagnetic tunnel junction structure, employed is a means characterized by using an MgO barrier and using a Co2FeAl full-Heusler alloy for any of the ferromagnetic layers therein. The ferromagnetic tunnel junction structure is characterized in that Co2FeAl includes especially a B2 structure and one of the ferromagnetic layers is formed on a Cr buffer layer. The magnetoresistive element is characterized in that the ferromagnetic tunnel junction structure therein is any of the above-mentioned ferromagnetic tunnel junction structure. Accordingly, a large TMR, especially a TMR over 100% at room temperature can be attained, using Co2FeAl having a smallest α though not a half-metal.

    摘要翻译： 对于本铁磁隧道结结构，采用的是一种特征在于使用MgO阻挡层并使用Co2FeAl全Heusler合金作为其中的任何铁磁层的方法。 铁磁隧道结结构的特征在于，Co 2 FeAl特别包括B2结构，并且在Cr缓冲层上形成铁磁层之一。 磁阻元件的特征在于其中的铁磁隧道结结构是上述铁磁隧道结结构中的任一个。 因此，尽管不是半金属，但是使用具有最小α的Co 2 FeAl，可以获得大的TMR，特别是在室温下超过100％的TMR。