公开(公告)号：US20110023632A1

公开(公告)日：2011-02-03

申请号：US12937638

申请日：2008-06-19

申请人： Navakanta Bhat ,  Rudra Pratap ,  Malhi Charanjeet Kaur

发明人： Navakanta Bhat ,  Rudra Pratap ,  Malhi Charanjeet Kaur

IPC分类号： G01L1/14 ,  H01L29/84

CPC分类号： G01L9/0098 ,  B81B3/0072 ,  G01L1/005 ,  G01L1/148 ,  G01L9/0073

摘要： The present invention relates to high sensitivity elastic deflection sensors, more particularly related to capacitively coupled FET based elastic deflection sensors. A sub-threshold elastic deflection FET sensor for sensing pressure/force comprises an elastic member forming a moving gate of the sensor, fixed dielectric on substrate of the FET, and a fluid dielectric between the elastic member and the fixed dielectric, wherein alteration in the height of the fluid dielectric (TSENS) due to pressure/force on the elastic member varies the sensor gate capacitance.

摘要翻译： 本发明涉及高灵敏度弹性偏转传感器，更具体地涉及基于电容耦合FET的弹性偏转传感器。 用于感测压力/力的亚阈值弹性偏转FET传感器包括形成传感器的移动栅极的弹性构件，FET的衬底上的固定电介质，以及弹性构件和固定电介质之间的流体电介质，其中， 由于弹性构件上的压力/力引起的流体介质（TSENS）的高度改变传感器栅极电容。

公开(公告)号：US20230017924A1

公开(公告)日：2023-01-19

申请号：US17787422

申请日：2020-12-21

申请人： Urvi CHAUHAN ,  Rudra Pratap Singh CHAUHAN ,  Jagdeep Ravindra KUMAR

发明人： Urvi CHAUHAN ,  Rudra Pratap Singh CHAUHAN ,  Jagdeep Ravindra KUMAR

IPC分类号： F24H15/223 ,  F24D17/00 ,  F24D19/10 ,  F24H15/156 ,  F24H15/248 ,  F24H15/305

摘要： Disclosed are system 100 and method of energy efficient hot and cold water management. The system 100 comprises: a control unit 101 for dynamically controlling the functioning of the system 100; at least a water storage tank 102 with at least one of a water level sensor, at least a heating element 1021, at least a temperature sensor 1022 or any combination thereof; at least an auxiliary water storage tank 103 with at least one of a water level sensor, at least a temperature sensor 1032; at least a water mixer unit 105 having at least a temperature sensor 1051; a user interface unit 1012 for controlling and monitoring different parameters including temperature, water level, opening and closing of valves 108 and 109; and a power supply with power backup unit 104 for providing basic power for proper functioning of the system 100.

公开(公告)号：US08459128B2

公开(公告)日：2013-06-11

申请号：US12937638

申请日：2008-06-19

申请人： Navakanta Bhat ,  Rudra Pratap ,  Malhi Charanjeet Kaur

发明人： Navakanta Bhat ,  Rudra Pratap ,  Malhi Charanjeet Kaur

IPC分类号： G01L1/12

CPC分类号： G01L9/0098 ,  B81B3/0072 ,  G01L1/005 ,  G01L1/148 ,  G01L9/0073

摘要： The present invention relates to high sensitivity elastic deflection sensors, more particularly related to capacitively coupled FET based elastic deflection sensors. A sub-threshold elastic deflection FET sensor for sensing pressure/force comprises an elastic member forming a moving gate of the sensor, fixed dielectric on substrate of the FET, and a fluid dielectric between the elastic member and the fixed dielectric, wherein alteration in the height of the fluid dielectric (TSENS) due to pressure/force on the elastic member varies the sensor gate capacitance.

摘要翻译： 本发明涉及高灵敏度弹性偏转传感器，更具体地涉及基于电容耦合FET的弹性偏转传感器。 用于感测压力/力的亚阈值弹性偏转FET传感器包括形成传感器的移动栅极的弹性构件，FET的衬底上的固定电介质，以及弹性构件和固定电介质之间的流体电介质，其中， 由于弹性构件上的压力/力引起的流体介质（TSENS）的高度改变传感器栅极电容。

公开(公告)号：US20110031986A1

公开(公告)日：2011-02-10

申请号：US12937243

申请日：2008-06-19

申请人： Navakanta Bhat ,  Balaji Jayaraman ,  S.A. Shivashankar ,  Rudra Pratap

发明人： Navakanta Bhat ,  Balaji Jayaraman ,  S.A. Shivashankar ,  Rudra Pratap

IPC分类号： G01N27/22

CPC分类号： G01N27/4143

摘要： The present invention relates to high sensitivity chemical sensors, more particularly relates to high sensitivity chemical sensors which are capacitively coupled, FET based analyte sensors. A sub-threshold capacitively coupled Field Effect Transistor (CapFET) sensor for sensing an analyte comprises fixed dielectric placed on substrate of the CapFET and second dielectric sensitive to the analyte, placed between gate terminal of the CapFET and the fixed dielectric, wherein presence of the analyte alters either dielectric constant of the second dielectric or work function of the gate.

摘要翻译： 本发明涉及高灵敏度化学传感器，更具体地涉及电容耦合的基于FET的分析物传感器的高灵敏度化学传感器。 用于感测分析物的亚阈值电容耦合场效应晶体管（CapFET）传感器包括放置在CapFET的衬底上的固定电介质和放置在CapFET的栅极端子与固定电介质之间的分析物敏感的第二电介质， 分析物改变了第二介质的介电常数或栅极的功函数。

公开(公告)号：US08434374B2

公开(公告)日：2013-05-07

申请号：US12937023

申请日：2008-06-19

申请人： Navakanta Bhat ,  Rudra Pratap ,  Thejas

发明人： Navakanta Bhat ,  Rudra Pratap ,  Thejas

IPC分类号： G01L1/12

CPC分类号： B81C1/00246 ,  B81C2203/0735 ,  G01C19/56 ,  G01P15/0894

摘要： The present invention relates to a Sub-threshold Field Effect Transistor (SF-FET). The invention integrates a MEMS mechanical transducer along with the sensing mechanism in a single device. Forced mass is capacitively coupled onto the FET structure. Dielectric SiO2 forms good interface with underlying silicon substrate. Air dielectric forms second dielectric wherein effective gate capacitance is the series combination of the second dielectric capacitance and fixed dielectric. Inertial displacements are sensed by observing change in drain current (ID) of the sensor due to change in gap height (TGap) of the second dielectric of the sensor caused by forced mass.

摘要翻译： 子阈值场效应晶体管（SF-FET）技术领域本发明涉及一种次阈值场效应晶体管（SF-FET）。 本发明将MEMS机械传感器与感测机构一起集成在单个装置中。 强制质量电容耦合到FET结构上。 电介质SiO 2与底层硅衬底形成良好的界面。 空气电介质形成第二电介质，其中有效栅极电容是第二介电电容和固定电介质的串联组合。 通过观察由于强制质量引起的传感器的第二电介质的间隙高度（TGap）的变化，传感器的漏极电流（ID）的变化来检测惯性位移。

公开(公告)号：US20110050201A1

公开(公告)日：2011-03-03

申请号：US12937023

申请日：2008-06-19

申请人： Navakanta Bhat ,  Rudra Pratap ,  Thejas

发明人： Navakanta Bhat ,  Rudra Pratap ,  Thejas

IPC分类号： G01N27/00 ,  H01L29/772

CPC分类号： B81C1/00246 ,  B81C2203/0735 ,  G01C19/56 ,  G01P15/0894

摘要： The present invention relates to a Sub-threshold Field Effect Transistor (SF-FET). The invention integrates a MEMS mechanical transducer along with the sensing mechanism in a single device. Forced mass is capacitively coupled onto the FET structure. Dielectric SiO2 forms good interface with underlying silicon substrate. Air dielectric forms second dielectric wherein effective gate capacitance is the series combination of the second dielectric capacitance and fixed dielectric. Inertial displacements are sensed by observing change in drain current (ID) of the sensor due to change in gap height (T Gap) of the second dielectric of the sensor caused by forced mass.

摘要翻译： 子阈值场效应晶体管（SF-FET）技术领域本发明涉及一种次阈值场效应晶体管（SF-FET）。 本发明将MEMS机械传感器与感测机构一起集成在单个装置中。 强制质量电容耦合到FET结构上。 电介质SiO 2与底层硅衬底形成良好的界面。 空气电介质形成第二电介质，其中有效栅极电容是第二介电电容和固定电介质的串联组合。 通过观察由于强制质量引起的传感器的第二电介质的间隙高度（T间隙）的变化，传感器的漏极电流（ID）的变化来检测惯性位移。