公开(公告)号：US20110050201A1

公开(公告)日：2011-03-03

申请号：US12937023

申请日：2008-06-19

申请人： Navakanta Bhat ,  Rudra Pratap ,  Thejas

发明人： Navakanta Bhat ,  Rudra Pratap ,  Thejas

IPC分类号： G01N27/00 ,  H01L29/772

CPC分类号： B81C1/00246 ,  B81C2203/0735 ,  G01C19/56 ,  G01P15/0894

摘要： The present invention relates to a Sub-threshold Field Effect Transistor (SF-FET). The invention integrates a MEMS mechanical transducer along with the sensing mechanism in a single device. Forced mass is capacitively coupled onto the FET structure. Dielectric SiO2 forms good interface with underlying silicon substrate. Air dielectric forms second dielectric wherein effective gate capacitance is the series combination of the second dielectric capacitance and fixed dielectric. Inertial displacements are sensed by observing change in drain current (ID) of the sensor due to change in gap height (T Gap) of the second dielectric of the sensor caused by forced mass.

摘要翻译： 子阈值场效应晶体管（SF-FET）技术领域本发明涉及一种次阈值场效应晶体管（SF-FET）。 本发明将MEMS机械传感器与感测机构一起集成在单个装置中。 强制质量电容耦合到FET结构上。 电介质SiO 2与底层硅衬底形成良好的界面。 空气电介质形成第二电介质，其中有效栅极电容是第二介电电容和固定电介质的串联组合。 通过观察由于强制质量引起的传感器的第二电介质的间隙高度（T间隙）的变化，传感器的漏极电流（ID）的变化来检测惯性位移。

公开(公告)号：US07743666B2

公开(公告)日：2010-06-29

申请号：US11389065

申请日：2006-03-27

申请人： Tetsuya Kuwashima ,  Naoki Ohta

发明人： Tetsuya Kuwashima ,  Naoki Ohta

IPC分类号： G01L1/00

CPC分类号： G01L1/005 ,  G01P15/0894 ,  G01P15/18 ,  H01L45/00

摘要： A tunneling effect element, including an insulating layer that forms a tunneling barrier, a lower electrode that is conductive and non-magnetic, and is formed on a bottom surface of said insulating layer, an upper electrode that is conductive and non-magnetic, and is formed on a top surface of said insulating layer, and a transmission member. The transmission member is made of insulating material that is formed surrounding the insulating layer and the lower and upper electrodes. The transmission member is also formed on a surface of an object to be detected, and transmits deformation of the object to be detected to the insulating layer. The tunneling effect element detects a change in stress of the object to be detected as a change in electric resistance.

摘要翻译： 隧道效应元件，包括形成隧道势垒的绝缘层，导电和非磁性的下电极，并且形成在所述绝缘层的底表面上，导电和非磁性的上电极，以及 形成在所述绝缘层的上表面和透射构件上。 传输构件由形成在绝缘层和下电极和上电极周围的绝缘材料制成。 传输构件也形成在待检测物体的表面上，并且将被检测物体的变形发送到绝缘层。 隧道效应元件检测作为电阻变化的待检测物体的应力变化。

公开(公告)号：US20100050788A1

公开(公告)日：2010-03-04

申请号：US12198663

申请日：2008-08-26

申请人： Youngtack Shim

发明人： Youngtack Shim

IPC分类号： G01L1/22

CPC分类号： G01L1/205 ,  G01L1/005 ,  G01L1/044 ,  G01L1/20 ,  G01L1/24 ,  G01P15/0894 ,  G01P15/093 ,  G01P15/12

摘要： Nanoscale measurement of force, torque, and acceleration are provided. In one embodiment, a measurement apparatus includes a first plurality of nanoparticles coupled to a first substrate separated from a second plurality of nanoparticles coupled to a second substrate by a pillar disposed between the first substrate and the second substrate.

摘要翻译： 提供力，扭矩和加速度的纳米尺度测量。 在一个实施例中，测量装置包括耦合到第一衬底的第一多个纳米颗粒，所述第一衬底通过设置在第一衬底和第二衬底之间的柱与第二衬底分离，第二衬底与第二衬底耦合。

公开(公告)号：US20090293299A1

公开(公告)日：2009-12-03

申请号：US12090610

申请日：2006-10-17

申请人： Bonifatijs Lubgins ,  Leonids Bekers

发明人： Bonifatijs Lubgins ,  Leonids Bekers

IPC分类号： G01B7/14 ,  G06F19/00

CPC分类号： G01P15/0894

摘要： A micromovement measuring device has a first element such as a probe tip or flat plate coupled to a test body (107) the movement of which is to be measured. A second element (104) is located adjacent to the first element, to form a gap (108) therebetween. As the test body and the first element gradually move away from the measuring element, so increasing the size of the gap, the second element is repeatedly moved up, to restore the gap to its original size. These repeated small quantized movements of the measuring element (104) are counted, and are used to provide an indication of how far the test body (107) has moved. In other embodiments, the first element may gradually move toward the second element, with the latter repeatedly moving away.

摘要翻译： 微运动测量装置具有第一元件，例如连接到测试体（107）的探针尖端或平板，其移动将被测量。 第二元件（104）位于与第一元件相邻的位置，以在它们之间形成间隙（108）。 随着测试体和第一元件逐渐离开测量元件，因此增加间隙的尺寸，第二元件反复向上移动，以将间隙恢复到其原始尺寸。 对测量元件（104）的这些重复的小量化运动进行计数，并用于提供测试体（107）移动多远的指示。 在其他实施例中，第一元件可以朝着第二元件逐渐移动，后者重复地移开。

公开(公告)号：US20060285789A1

公开(公告)日：2006-12-21

申请号：US10554312

申请日：2004-04-22

申请人： Marek Michalewicz ,  Zygmunt Rymuza

发明人： Marek Michalewicz ,  Zygmunt Rymuza

IPC分类号： G02B6/12

CPC分类号： B81B3/0051 ,  B81B3/0021 ,  B81B2201/0285 ,  B81B2203/0109 ,  B81B2203/051 ,  G01C19/00 ,  G01D21/00 ,  G01P15/0894 ,  Y10S977/724 ,  Y10S977/725 ,  Y10S977/732 ,  Y10S977/733

摘要： A monolithic micro or nano electromechanical transducer device includes a pair of substrates (20, 25) respectively mounting one or more elongate electrical conductors (40) and resilient solid state hinge means (30, 32) integral with and linking the substrates to relatively locate the substrates so that respective elongate electrical conductors (40) of the substrates are opposed at a spacing that permits a detectable quantum tunnelling current between the conductors when a suitable electrical potential difference is applied across the conductors. The solid state hinge means permits relative parallel translation of the substrates transverse to the elongate electrical conductors.

摘要翻译： 单片微型或纳米机电换能器装置包括分别安装一个或多个细长电导体（40）和弹性固态铰链装置（30,32）的一对基板（20,25），所述弹性固态铰链装置与所述基板成一体并将其连接， 衬底，使得当在导体上施加合适的电势差时，衬底的各个细长电导体（40）以允许导体之间的可检测的量子隧穿电流的间隔相对。 固态铰链装置允许基板横向于细长电导体的相对平行平移。

公开(公告)号：US20060220781A1

公开(公告)日：2006-10-05

申请号：US11389065

申请日：2006-03-27

申请人： Tetsuya Kuwashima ,  Naoki Ohta

发明人： Tetsuya Kuwashima ,  Naoki Ohta

IPC分类号： H01L43/00

CPC分类号： G01L1/005 ,  G01P15/0894 ,  G01P15/18 ,  H01L45/00

摘要： This invention provides a tunneling effect element that has versatility and that does not receive the effects of drift due to differences in the thermal-expansion coefficient of the lower and upper electrodes, and is not easily affected by external magnetic fields. The disclosed tunneling effect element 1 comprises: an insulating layer 11 that forms a tunneling barrier, a lower electrode 12 that is conductive and is formed on the bottom surface of the insulating layer 11, an upper electrode 13 that is conductive and is formed on the top surface of the insulating layer 11, and a transmission member 5 that is formed around the insulating layer 11, lower electrode 12 and upper electrode 13, and transmits the behavior of the object to be detected to the insulating layer 11.

摘要翻译： 本发明提供了具有通用性的隧道效应元件，并且由于上下电极的热膨胀系数的差异而不会受到漂移的影响，并且不容易受到外部磁场的影响。 所公开的隧道效应元件1包括：形成隧道势垒的绝缘层11，导电并形成在绝缘层11的底表面上的下电极12，导电并形成在绝缘层11上的上电极13 绝缘层11的上表面和形成在绝缘层11，下电极12和上电极13周围的透射构件5，并将被检测物体的行为传递到绝缘层11。

公开(公告)号：US06835587B2

公开(公告)日：2004-12-28

申请号：US10639289

申请日：2003-08-11

申请人： Randall L. Kubena ,  David T. Chang

发明人： Randall L. Kubena ,  David T. Chang

IPC分类号： H01L2100

CPC分类号： B81C3/002 ,  B81B2201/0242 ,  B81B2201/025 ,  B81C2201/019 ,  B81C2203/036 ,  B81C2203/058 ,  G01C19/5656 ,  G01P15/0802 ,  G01P15/0894 ,  G01P15/18 ,  G01P2015/084 ,  G01P2015/0842 ,  H01H1/0036 ,  H01H59/0009

摘要： A first axis MEM tunneling/capacitive sensor and method of making same. Cantilever beam structures for at least two orthogonally arranged sensors and associated mating structures are defined on a first substrate or wafer, the at least two orthogonally arrange sensors having orthogonal directions of sensor sensitivity. A resonator structure of at least a third sensor is also defined, the third sensor being sensitive in a third direction orthogonal to the orthogonal directions of sensor sensitivity of the two orthogonally arranged sensors and the resonator structure having a mating structure thereon. Contact structures for at least two orthogonally arranged sensors are formed together with mating structures on a second substrate or wafer, the mating structures on the second substrate or wafer being of a complementary shape to the mating structures on the first substrate or wafer.

摘要翻译： 第一轴MEM隧道/电容传感器及其制造方法。 至少两个正交布置的传感器和相关联的配合结构的悬臂梁结构被限定在第一基板或晶片上，所述至少两个正交布置的传感器具有传感器灵敏度的正交方向。 还限定了至少第三传感器的谐振器结构，第三传感器在正交于两个正交布置的传感器的传感器灵敏度的正交方向的第三方向和在其上具有匹配结构的谐振器结构的灵敏度。 至少两个正交布置的传感器的接触结构与第二衬底或晶片上的配合结构一起形成，第二衬底或晶片上的配合结构与第一衬底或晶片上的配合结构互补形状。

公开(公告)号：US06309077B1

公开(公告)日：2001-10-30

申请号：US09669972

申请日：2000-09-25

申请人： Mohammed T. A. Saif ,  Noel C. MacDonald

发明人： Mohammed T. A. Saif ,  Noel C. MacDonald

IPC分类号： G02B7182

CPC分类号： G01P15/0802 ,  G01P15/0894 ,  H01H1/0036 ,  H01H2003/463 ,  Y10S977/70 ,  Y10S977/724

摘要： A micromechanical micromotion amplifier has an integrated structure formed primarily of silicon and comprises a plurality of long slender flexible beams which are released from a silicon substrate for movement with respect to fixed points of reference upon the substrate. By arranging these beams in cooperating perpendicular pairs as micromotion amplifier stages, an input axial force/movement applied to a moveable free end of a first beam generates a transverse motion or buckling movement which in turn, translates or induces buckling movement in the connected second beam. The resultant output buckling of the second beam is an order of magnitude greater than the initial movement applied as an input to the first beam. Thus, beam pairs can be arranged as micromotion amplifier stages to amplify minute amounts of movement. Beam pairs or stages can also be cascaded to form integrated devices capable of producing greatly increased measurable effects in response to minute amounts of input. Such devices are useful as highly sensitive integrated micro-sensors for measuring a wide variety of parameters such as temperature, pressure, humidity, impact or acceleration. Such devices may also form the basis of highly sensitive micro-switches.

摘要翻译： 微机电微动力放大器具有主要由硅形成的整体结构，并且包括从硅衬底释放的多个长细长的柔性梁，用于相对于衬底上的固定参考点移动。 通过将这些光束配置为协作的垂直对作为微动力放大器级，施加到第一光束的可移动自由端的输入轴向力/运动产生横向运动或屈曲运动，其进而平移或引起所连接的第二光束中的屈曲运动 。 第二光束的合成输出屈曲比作为第一光束的输入的初始移动大一个数量级。 因此，波束对可以被布置为微运动放大器级以放大微小的运动量。 光束对或阶段也可以级联以形成能够响应于微小量的输入而产生大大增加的可测量效果的集成器件。 这样的器件可用作用于测量各种参数（如温度，压力，湿度，冲击或加速度）的高灵敏度集成微传感器。 这样的设备也可以形成高灵敏度的微型开关的基础。

公开(公告)号：US6109105A

公开(公告)日：2000-08-29

申请号：US186174

申请日：1998-11-04

申请人： Randall L. Kubena ,  Gary M. Atkinson ,  Dorian Challoner ,  Wallace Sunada

发明人： Randall L. Kubena ,  Gary M. Atkinson ,  Dorian Challoner ,  Wallace Sunada

IPC分类号： G01C19/56 ,  G01P15/08 ,  G01P15/13 ,  G01P15/18 ,  G01P21/00 ,  G01P9/04

CPC分类号： G01C19/56 ,  G01P15/0894 ,  G01P15/131 ,  G01P15/18 ,  G01P21/00

摘要： Various structures for cantilever beam tunneling rate gyro devices formed on a single substrate are disclosed. A cantilever electrode having a plurality of portions extending from the substrate with one end of the cantilever is suspended above the substrate at a distance from a tunneling electrode so that a tunneling current flows through the cantilever and tunneling electrode in response to an applied bias voltage. The cantilever and tunneling electrodes form a circuit that produces an output signal. A force applied to the sensor urges the cantilever electrode to deflect relative to the tunneling electrode to modulate the output signal. The output signal is a control voltage that is applied between the cantilever electrode and a control electrode to maintain a constant tunneling current. In the preferred embodiment, two cantilever portions extend from the wafer surface forming a Y-shape. In a further embodiment, a strap is fabricated on the cantilever electrode. In an alternate embodiment, a ridge emitter is formed such that it remains under the cantilever electrode during lateral motion of the cantilever. In an alternate embodiment, a cantilever having a varying width is fabricated.

摘要翻译： 公开了在单个基板上形成的用于悬臂梁隧穿率陀螺装置的各种结构。 具有多个从悬臂的一端延伸的基板的悬臂电极在隧道电极的一定距离处悬挂在基板上方，使得隧道电流响应于所施加的偏置电压而流过悬臂和隧道电极。 悬臂和隧道电极形成产生输出信号的电路。 施加到传感器的力促使悬臂电极相对于隧道电极偏转，以调制输出信号。 输出信号是施加在悬臂电极和控制电极之间以保持恒定的隧道电流的控制电压。 在优选实施例中，两个悬臂部分从形成Y形的晶片表面延伸。 在另一个实施例中，在悬臂电极上制造带。 在替代实施例中，脊形发射器形成为使得其在悬臂的横向运动期间保持在悬臂电极下方。 在替代实施例中，制造具有变化宽度的悬臂。

公开(公告)号：US5756895A

公开(公告)日：1998-05-26

申请号：US522878

申请日：1995-09-01

申请人： Randall L. Kubena ,  Gary M. Atkinson ,  Dorian Challoner ,  Wallace Sunada

发明人： Randall L. Kubena ,  Gary M. Atkinson ,  Dorian Challoner ,  Wallace Sunada

IPC分类号： G01C19/56 ,  G01P15/08 ,  G01P15/13 ,  G01P15/18 ,  G01P21/00 ,  G01P9/04

CPC分类号： G01C19/56 ,  G01P15/0894 ,  G01P15/131 ,  G01P15/18 ,  G01P21/00

摘要： Various structures for cantilever beam tunneling rate gyro devices formed on a single substrate are disclosed. A cantilever electrode having a plurality of portions extending from the substrate with one end of the cantilever is suspended above the substrate at a distance from a tunneling electrode so that a tunneling current flows through the cantilever and tunneling electrode in response to an applied bias voltage. The cantilever and tunneling electrodes form a circuit that produces an output signal. A force applied to the sensor urges the cantilever electrode to deflect relative to the tunneling electrode to modulate the output signal. The output signal is a control voltage that is applied between the cantilever electrode and a control electrode to maintain a constant tunneling current. In the preferred embodiment, two cantilever portions extend from the wafer surface forming a Y-shape. In a further embodiment, a strap is fabricated on the cantilever electrode. In an alternate embodiment, a ridge emitter is formed such that it remains under the cantilever electrode during lateral motion of the cantilever In an alternate embodiment, a cantilever having a varying width is fabricated.

摘要翻译： 公开了在单个基板上形成的用于悬臂梁隧穿率陀螺装置的各种结构。 具有多个从悬臂的一端延伸的基板的悬臂电极在隧道电极的一定距离处悬挂在基板上方，使得隧道电流响应于所施加的偏置电压而流过悬臂和隧道电极。 悬臂和隧道电极形成产生输出信号的电路。 施加到传感器的力促使悬臂电极相对于隧道电极偏转，以调制输出信号。 输出信号是施加在悬臂电极和控制电极之间以保持恒定的隧道电流的控制电压。 在优选实施例中，两个悬臂部分从形成Y形的晶片表面延伸。 在另一个实施例中，在悬臂电极上制造带。 在替代实施例中，脊形发射器形成为使得其在悬臂的横向运动期间保持在悬臂电极下方。在替代实施例中，制造具有变化宽度的悬臂。