Light emitting diode with diffraction lattice
    1.
    发明申请
    Light emitting diode with diffraction lattice 审中-公开
    具有衍射晶格的发光二极管

    公开(公告)号:US20070057266A1

    公开(公告)日:2007-03-15

    申请号:US11595910

    申请日:2006-11-13

    IPC分类号: H01L33/00

    摘要: A method of fabricating light emitting diodes (LED) with a colour purifying diffraction lattice (CPDL) is suggested, the essence of the invention is in the use of the coherent scattering of the light by the CPDL for colour purifying of the light emitted by the LED and enhancement its extraction efficiency, the CPDL is a hexagonal two-dimensional periodical pattern on the surface of the LED structure or an internal interface resulting in the periodical variation in the refractive index with the period d The period of CPDL satisfies the equation d=m.lamda./n, where m is a positive integer number, .lamda. is the wavelength of the light generated by LED, and n is the refraction index of LED structure. The height of the hexagonal islands forming CPDL is h=.lamda.(2l+1)/2n, l is a positive integer number or zero. Use of CPDL allows to convert the laterally propagating light into the vertically propagating and simultaneously filter its spectrum.

    摘要翻译: 提出了一种制造具有彩色净化衍射晶格(CPDL)的发光二极管(LED)的方法,本发明的实质在于利用CPDL对光发射的光的相干散射进行颜色净化 LED和提高其提取效率,CPDL是LED结构表面上的六边形二维周期图案或内部界面,导致折射率与周期d的周期性变化CPDL的周期满足方程式d = m.lamda./n,其中m是正整数.lamda。 是LED产生的光的波长,n是LED结构的折射率。 形成CPDL的六边形岛的高度为h = .lamda(2l + 1)/ 2n,l为正整数或零。 使用CPDL允许将横向传播的光转换成垂直传播并同时过滤其光谱。

    Chemical vapor deposition reactor
    2.
    发明申请
    Chemical vapor deposition reactor 审中-公开
    化学气相沉积反应器

    公开(公告)号:US20060288933A1

    公开(公告)日:2006-12-28

    申请号:US11167538

    申请日:2005-06-27

    IPC分类号: C23C16/00

    摘要: A chemical vapor deposition reactor is provided. The chemical vapor deposition reactor includes a deposition chamber, a substrate within the deposition chamber, at least two inlet ports extending into the deposition chamber for supplying a first and a second gases to the deposition chamber respectively and a particle source for supplying a plurality of solid particles to the deposition chamber. The first gas reacts with the second gas to form a film incorporating the plurality of solid particles upon the substrate. Films with composition varying across the growth direction are produced by the chemical vapor deposition reactor without the use of mask layers.

    摘要翻译: 提供化学气相沉积反应器。 所述化学气相沉积反应器包括沉积室,所述沉积室内的衬底,延伸到所述沉积室中的至少两个入口端口,用于将第一和第二气体分别提供给所述沉积室;以及颗粒源,用于供应多个固体 颗粒到沉积室。 第一气体与第二气体反应以形成在衬底上并入有多个固体颗粒的膜。 通过不使用掩模层的化学气相沉积反应器产生具有在生长方向上变化的组成的膜。

    Light emitting semiconductor device
    3.
    发明申请
    Light emitting semiconductor device 失效
    发光半导体器件

    公开(公告)号:US20060278880A1

    公开(公告)日:2006-12-14

    申请号:US11150370

    申请日:2005-06-10

    IPC分类号: H01L33/00

    摘要: A novel NPBL and ANPL light emitting semiconductor device and a method for fabricating the same are provided. In the present invention, plural nano-particles are applied in the active layer of the light emitting semiconductor device, so that the leakage current thereof is reduced. In addition, the provided light emitting semiconductor device fabricated via a planar technology process is microscopically planar, but not planar at micro- and nano-scale. Hence the parasitic wave guiding effect, which suppresses the light extraction efficiency of the light emitting semiconductor device, is destroyed thereby.

    摘要翻译: 提供了一种新型的NPBL和ANPL发光半导体器件及其制造方法。 在本发明中,在发光半导体器件的有源层中施加多个纳米粒子,使其漏​​电流减少。 此外,通过平面技术工艺制造的所提供的发光半导体器件在微观和纳米尺度上是微观平面的,但不是平面的。 因此,抑制发光半导体器件的光提取效率的寄生波引导效应被破坏。

    Light emitting diode with diffraction lattice
    4.
    发明申请
    Light emitting diode with diffraction lattice 审中-公开
    具有衍射晶格的发光二极管

    公开(公告)号:US20060043398A1

    公开(公告)日:2006-03-02

    申请号:US10928094

    申请日:2004-08-30

    IPC分类号: H01L33/00

    摘要: A method of fabricating light emitting diodes (LED) with a colour purifying diffraction lattice (CPDL) is suggested, the essence of the invention is in the use of the coherent scattering of the light by the CPDL for colour purifying of the light emitted by the LED and enhancement its extraction efficiency, the CPDL is a hexagonal two-dimensional periodical pattern on the surface of the LED structure or an internal interface resulting in the periodical variation in the refractive index with the period d The period of CPDL satisfies the equation d=mλ/n, where m is a positive integer number, λ is the wavelength of the light generated by LED, and n is the refraction index of LED structure. The height of the hexagonal islands forming CPDL is h=λ(2l+1)/2n, l is a positive integer number or zero. Use of CPDL allows to convert the laterally propagating light into the vertically propagating and simultaneously filter its spectrum.

    摘要翻译: 提出了一种制造具有彩色净化衍射晶格(CPDL)的发光二极管(LED)的方法,本发明的实质在于利用CPDL对光发射的光的相干散射进行颜色净化 LED和提高其提取效率,CPDL是LED结构表面上的六边形二维周期图案或内部界面,导致折射率与周期d的周期性变化CPDL的周期满足方程式d = mlambda / n,其中m是正整数,λ是由LED产生的光的波长,n是LED结构的折射率。 形成CPDL的六边形岛的高度为h = lambda(2 l + 1)/ 2 n,l为正整数或零。 使用CPDL允许将横向传播的光转换成垂直传播并同时过滤其光谱。