公开(公告)号：US20080011349A1

公开(公告)日：2008-01-17

申请号：US11744010

申请日：2007-05-03

Applicant: Ryne Raffaele ,  David Wilt

Inventor： Ryne Raffaele ,  David Wilt

IPC: H01L31/042 ,  H01L21/00 ,  H01L31/00

CPC classification number: H01L27/1423 ,  B82Y20/00 ,  H01L31/0352 ,  H01L31/035236 ,  H01L31/035263 ,  Y02E10/50

Abstract: A photovoltaic device includes one or more structures, an array of at least one of quantum dots and quantum dashes, at least one groove, and at least one conductor. Each of the structures comprises an intrinsic layer on one of an n type layer and a p type layer and the other one of the n type layer and the p type layer on the intrinsic layer. The array of at least one of quantum dots and quantum dashes is located in the intrinsic layer in at least one of the structures. The groove extends into at least one of the structures and the conductor is located along at least a portion of the groove.

Abstract translation: 光伏器件包括一个或多个结构，量子点和量子破折号中的至少一个的阵列，至少一个沟槽和至少一个导体。 每个结构包括在n型层和p型层之一上的本征层，在本征层上包括n型层和p型层中的另一层。 量子点和量子破折号中的至少一个的阵列位于至少一个结构中的本征层中。 凹槽延伸到至少一个结构中，并且导体沿着凹槽的至少一部分定位。