公开(公告)号：US20080011349A1

公开(公告)日：2008-01-17

申请号：US11744010

申请日：2007-05-03

Applicant: Ryne Raffaele ,  David Wilt

Inventor： Ryne Raffaele ,  David Wilt

IPC: H01L31/042 ,  H01L21/00 ,  H01L31/00

CPC classification number: H01L27/1423 ,  B82Y20/00 ,  H01L31/0352 ,  H01L31/035236 ,  H01L31/035263 ,  Y02E10/50

Abstract: A photovoltaic device includes one or more structures, an array of at least one of quantum dots and quantum dashes, at least one groove, and at least one conductor. Each of the structures comprises an intrinsic layer on one of an n type layer and a p type layer and the other one of the n type layer and the p type layer on the intrinsic layer. The array of at least one of quantum dots and quantum dashes is located in the intrinsic layer in at least one of the structures. The groove extends into at least one of the structures and the conductor is located along at least a portion of the groove.

Abstract translation: 光伏器件包括一个或多个结构，量子点和量子破折号中的至少一个的阵列，至少一个沟槽和至少一个导体。 每个结构包括在n型层和p型层之一上的本征层，在本征层上包括n型层和p型层中的另一层。 量子点和量子破折号中的至少一个的阵列位于至少一个结构中的本征层中。 凹槽延伸到至少一个结构中，并且导体沿着凹槽的至少一部分定位。

公开(公告)号：US20080311465A1

公开(公告)日：2008-12-18

申请号：US12196939

申请日：2008-08-22

Applicant: Ryne P. Raffaelle ,  Phillip Jenkins ,  David Wilt ,  David Scheiman ,  Donald Chubb ,  Stephanie Castro

Inventor： Ryne P. Raffaelle ,  Phillip Jenkins ,  David Wilt ,  David Scheiman ,  Donald Chubb ,  Stephanie Castro

IPC: H01M10/44

CPC classification number: G21H1/04

Abstract: An alpha voltaic battery includes at least one layer of a semiconductor material comprising at least one p/n junction, at least one absorption and conversion layer on the at least one layer of semiconductor layer, and at least one alpha particle emitter. The absorption and conversion layer prevents at least a portion of alpha particles from the alpha particle emitter from damaging the p/n junction in the layer of semiconductor material. The absorption and conversion layer also converts at least a portion of energy from the alpha particles into electron-hole pairs for collection by the one p/n junction in the layer of semiconductor material.

Abstract translation: α伏电池包括至少一层半导体材料，其包含至少一个p / n结，至少一层半导体层上的至少一个吸收和转换层，以及至少一个α粒子发射体。 吸收和转换层防止α粒子发射器的α粒子的至少一部分损坏半导体材料层中的p / n结。 吸收和转换层还将来自α粒子的能量的至少一部分转换成电子 - 空穴对，以由半导体材料层中的一个p / n结收集。

公开(公告)号：US07867639B2

公开(公告)日：2011-01-11

申请号：US11093134

申请日：2005-03-29

Applicant: Ryne P. Raffaelle ,  Phillip Jenkins ,  David Wilt ,  David Scheiman ,  Donald Chubb ,  Stephanie Castro

Inventor： Ryne P. Raffaelle ,  Phillip Jenkins ,  David Wilt ,  David Scheiman ,  Donald Chubb ,  Stephanie Castro

IPC: H01M14/00

CPC classification number: G21H1/04

Abstract: An alpha voltaic battery includes at least one layer of a semiconductor material comprising at least one p/n junction, at least one absorption and conversion layer on the at least one layer of semiconductor layer, and at least one alpha particle emitter. The absorption and conversion layer prevents at least a portion of alpha particles from the alpha particle emitter from damaging the p/n junction in the layer of semiconductor material. The absorption and conversion layer also converts at least a portion of energy from the alpha particles into electron-hole pairs for collection by the one p/n junction in the layer of semiconductor material.

Abstract translation: α伏电池包括至少一层半导体材料，其包含至少一个p / n结，至少一层半导体层上的至少一个吸收和转换层，以及至少一个α粒子发射体。 吸收和转换层防止α粒子发射器的α粒子的至少一部分损坏半导体材料层中的p / n结。 吸收和转换层还将来自α粒子的能量的至少一部分转换成电子 - 空穴对，以由半导体材料层中的一个p / n结收集。

公开(公告)号：US20080318357A1

公开(公告)日：2008-12-25

申请号：US12196790

申请日：2008-08-22

Applicant: Ryne P. Raffaelle ,  Phillip Jenkins ,  David Wilt ,  David Scheiman ,  Donald Chubb ,  Stephanie Castro

Inventor： Ryne P. Raffaelle ,  Phillip Jenkins ,  David Wilt ,  David Scheiman ,  Donald Chubb ,  Stephanie Castro

IPC: H01L31/18

CPC classification number: G21H1/04

Abstract: An alpha voltaic battery includes at least one layer of a semiconductor material comprising at least one p/n junction, at least one absorption and conversion layer on the at least one layer of semiconductor layer, and at least one alpha particle emitter. The absorption and conversion layer prevents at least a portion of alpha particles from the alpha particle emitter from damaging the p/n junction in the layer of semiconductor material. The absorption and conversion layer also converts at least a portion of energy from the alpha particles into electron-hole pairs for collection by the one p/n junction in the layer of semiconductor material.

公开(公告)号：US07936019B2

公开(公告)日：2011-05-03

申请号：US11180841

申请日：2005-07-13

Applicant: Ryne P. Raffaelle ,  David Wilt

Inventor： Ryne P. Raffaelle ,  David Wilt

IPC: H01L29/66

CPC classification number: G21G4/00 ,  G21H1/04

Abstract: A power source and methods thereof includes a structure comprising one or more p type layers, one or more n type layers, and one or more intrinsic layers and at least one source of radiation is disposed on at least a portion of the structure. Each of the p type layers is separated from each of the n type layers by one of the intrinsic layers.

Abstract translation: 电源及其方法包括包括一个或多个p型层，一个或多个n型层和一个或多个本征层的结构，并且至少一个辐射源设置在该结构的至少一部分上。 每个p型层通过本征层之一与n型层中的每一层分离。

公开(公告)号：US07867640B2

公开(公告)日：2011-01-11

申请号：US12196790

申请日：2008-08-22

Applicant: Ryne P. Raffaelle ,  Phillip Jenkins ,  David Wilt ,  David Scheiman ,  Donald Chubb ,  Stephanie Castro

Inventor： Ryne P. Raffaelle ,  Phillip Jenkins ,  David Wilt ,  David Scheiman ,  Donald Chubb ,  Stephanie Castro

IPC: H01M14/00

CPC classification number: G21H1/04

Abstract: An alpha voltaic battery includes at least one layer of a semiconductor material comprising at least one p/n junction, at least one absorption and conversion layer on the at least one layer of semiconductor layer, and at least one alpha particle emitter. The absorption and conversion layer prevents at least a portion of alpha particles from the alpha particle emitter from damaging the p/n junction in the layer of semiconductor material. The absorption and conversion layer also converts at least a portion of energy from the alpha particles into electron-hole pairs for collection by the one p/n junction in the layer of semiconductor material.

公开(公告)号：US07718283B2

公开(公告)日：2010-05-18

申请号：US12196939

申请日：2008-08-22

Applicant: Ryne P. Raffaelle ,  Phillip Jenkins ,  David Wilt ,  David Scheiman ,  Donald Chubb ,  Stephanie Castro

Inventor： Ryne P. Raffaelle ,  Phillip Jenkins ,  David Wilt ,  David Scheiman ,  Donald Chubb ,  Stephanie Castro

IPC: H01M14/00

CPC classification number: G21H1/04

Abstract: An alpha voltaic battery includes at least one layer of a semiconductor material comprising at least one p/n junction, at least one absorption and conversion layer on the at least one layer of semiconductor layer, and at least one alpha particle emitter. The absorption and conversion layer prevents at least a portion of alpha particles from the alpha particle emitter from damaging the p/n junction in the layer of semiconductor material. The absorption and conversion layer also converts at least a portion of energy from the alpha particles into electron-hole pairs for collection by the one p/n junction in the layer of semiconductor material.

Abstract translation: α伏电池包括至少一层半导体材料，其包含至少一个p / n结，至少一层半导体层上的至少一个吸收和转换层，以及至少一个α粒子发射体。 吸收和转换层防止α粒子发射器的α粒子的至少一部分损坏半导体材料层中的p / n结。 吸收和转换层还将来自α粒子的能量的至少一部分转换成电子 - 空穴对，以由半导体材料层中的一个p / n结收集。

公开(公告)号：US20060017108A1

公开(公告)日：2006-01-26

申请号：US11180841

申请日：2005-07-13

Applicant: Ryne Raffaelle ,  David Wilt

Inventor： Ryne Raffaelle ,  David Wilt

IPC: H01L27/12

CPC classification number: G21G4/00 ,  G21H1/04

Abstract: A power source and methods thereof includes a structure comprising one or more p type layers, one or more n type layers, and one or more intrinsic layers and at least one source of radiation is disposed on at least a portion of the structure. Each of the p type layers is separated from each of the n type layers by one of the intrinsic layers.

Abstract translation: 电源及其方法包括包括一个或多个p型层，一个或多个n型层和一个或多个本征层的结构，并且至少一个辐射源设置在该结构的至少一部分上。 每个p型层通过本征层之一与n型层中的每一层分离。

公开(公告)号：US20050231064A1

公开(公告)日：2005-10-20

申请号：US11093134

申请日：2005-03-29

Applicant: Ryne Raffaelle ,  Phillip Jenkins ,  David Wilt ,  David Scheiman ,  Donald Chubb ,  Stephanie Castro

Inventor： Ryne Raffaelle ,  Phillip Jenkins ,  David Wilt ,  David Scheiman ,  Donald Chubb ,  Stephanie Castro

IPC: G01H1/04

CPC classification number: G21H1/04

Abstract: An alpha voltaic battery includes at least one layer of a semiconductor material comprising at least one p/n junction, at least one absorption and conversion layer on the at least one layer of semiconductor layer, and at least one alpha particle emitter. The absorption and conversion layer prevents at least a portion of alpha particles from the alpha particle emitter from damaging the p/n junction in the layer of semiconductor material. The absorption and conversion layer also converts at least a portion of energy from the alpha particles into electron-hole pairs for collection by the one p/n junction in the layer of semiconductor material.

Abstract translation: α伏电池包括至少一层半导体材料，其包含至少一个p / n结，至少一层半导体层上的至少一个吸收和转换层，以及至少一个α粒子发射体。 吸收和转换层防止α粒子发射器的α粒子的至少一部分损坏半导体材料层中的p / n结。 吸收和转换层还将来自α粒子的能量的至少一部分转换成电子 - 空穴对，以由半导体材料层中的一个p / n结收集。