公开(公告)号：US06975012B2

公开(公告)日：2005-12-13

申请号：US10697129

申请日：2003-10-29

申请人： Miki Moriyama ,  Masaki Murakami ,  Atsushi Kyan ,  Ryoichi Ohno

发明人： Miki Moriyama ,  Masaki Murakami ,  Atsushi Kyan ,  Ryoichi Ohno

IPC分类号： G01T1/24 ,  H01L27/14 ,  H01L31/0224 ,  H01L31/0296 ,  H01L31/032 ,  H01L31/09 ,  H01L31/108 ,  H01L31/118 ,  H01L31/07 ,  H01L31/105 ,  H01L31/117

CPC分类号： H01L31/022408 ,  H01L31/0296 ,  H01L31/032 ,  H01L31/118

摘要： Disclosed is a semiconductor radiation detector element of Schottky barrier type, comprising: a compound semiconductor crystal including cadmium and tellurium as main components; and voltage application means for applying voltage to the compound semiconductor crystal. According to the present invention, said voltage application means includes a compound of indium, cadmium and tellurium: InxCdyTez formed on one surface of the compound semiconductor crystal. Preferably, the rate “z” of occupation of tellurium in the compound InxCdyTez is in the range of not less than 42.9%, but not greater than 50% by ratio of number of atoms. Furthermore, preferably, the rate “y” of occupation of cadmium in the compound InxCdyTez is in the range of not less than 0%, but not greater than 10% by ratio of number of atoms.

摘要翻译： 公开了一种肖特基势垒型半导体辐射检测元件，其特征在于，包括：以镉和碲为主要成分的化合物半导体晶体; 以及用于向化合物半导体晶体施加电压的电压施加装置。 根据本发明，所述电压施加装置包括铟，镉和碲的化合物：在一个上形成的一个或多个Cd 化合物半导体晶体的表面。 优选地，化合物中的碲的占据率“z”在不小于42.9的范围内 ％，但不大于50％的原子数比。 此外，优选地，化合物中的Cd的占据的比率“y”在不小于 超过原子数的0％，但不大于10％。