公开(公告)号：US06975012B2

公开(公告)日：2005-12-13

申请号：US10697129

申请日：2003-10-29

申请人： Miki Moriyama ,  Masaki Murakami ,  Atsushi Kyan ,  Ryoichi Ohno

发明人： Miki Moriyama ,  Masaki Murakami ,  Atsushi Kyan ,  Ryoichi Ohno

IPC分类号： G01T1/24 ,  H01L27/14 ,  H01L31/0224 ,  H01L31/0296 ,  H01L31/032 ,  H01L31/09 ,  H01L31/108 ,  H01L31/118 ,  H01L31/07 ,  H01L31/105 ,  H01L31/117

CPC分类号： H01L31/022408 ,  H01L31/0296 ,  H01L31/032 ,  H01L31/118

摘要： Disclosed is a semiconductor radiation detector element of Schottky barrier type, comprising: a compound semiconductor crystal including cadmium and tellurium as main components; and voltage application means for applying voltage to the compound semiconductor crystal. According to the present invention, said voltage application means includes a compound of indium, cadmium and tellurium: InxCdyTez formed on one surface of the compound semiconductor crystal. Preferably, the rate “z” of occupation of tellurium in the compound InxCdyTez is in the range of not less than 42.9%, but not greater than 50% by ratio of number of atoms. Furthermore, preferably, the rate “y” of occupation of cadmium in the compound InxCdyTez is in the range of not less than 0%, but not greater than 10% by ratio of number of atoms.

摘要翻译： 公开了一种肖特基势垒型半导体辐射检测元件，其特征在于，包括：以镉和碲为主要成分的化合物半导体晶体; 以及用于向化合物半导体晶体施加电压的电压施加装置。 根据本发明，所述电压施加装置包括铟，镉和碲的化合物：在一个上形成的一个或多个Cd 化合物半导体晶体的表面。 优选地，化合物中的碲的占据率“z”在不小于42.9的范围内 ％，但不大于50％的原子数比。 此外，优选地，化合物中的Cd的占据的比率“y”在不小于 超过原子数的0％，但不大于10％。

公开(公告)号：US08759123B2

公开(公告)日：2014-06-24

申请号：US12659954

申请日：2010-03-25

申请人： Satoshi Wada ,  Miki Moriyama

发明人： Satoshi Wada ,  Miki Moriyama

IPC分类号： H01L21/00

CPC分类号： H01L33/54 ,  B29C43/021 ,  B29C43/18 ,  B29K2709/08 ,  H01L24/97 ,  H01L33/56 ,  H01L2224/48091 ,  H01L2224/49107 ,  H01L2924/12041 ,  H01L2924/15787 ,  H01L2933/005 ,  H01L2924/00014 ,  H01L2924/00

摘要： A method of manufacturing a LED lamp that is formed by sealing a LED element mounted on a substrate with glass, includes a mounting process for mounting the LED element on the substrate, a sealing member preparation process for preparing a glass sealing member that includes a concave portion being capable of housing the LED element, and a sealing process wherein the sealing member is arranged so that a forming surface of the concave portion faces the LED element, the sealing member is bonded to the substrate by thermal compression bonding, and the forming surface of the concave portion is made along the LED element.

摘要翻译： 一种通过用玻璃封装安装在基板上的LED元件形成的LED灯的制造方法，包括将LED元件安装在基板上的安装工序，制造玻璃密封部件的密封部件准备工序，该玻璃密封部件包括凹部 能够容纳LED元件的部分和密封处理，其中密封构件布置成使得凹部的成形表面面向LED元件，密封构件通过热压接而结合到基板，并且成形表面 沿着LED元件形成凹部。

公开(公告)号：US20100244071A1

公开(公告)日：2010-09-30

申请号：US12659954

申请日：2010-03-25

申请人： Satoshi Wada ,  Miki Moriyama

发明人： Satoshi Wada ,  Miki Moriyama

IPC分类号： H01L33/52 ,  H01L33/48

CPC分类号： H01L33/54 ,  B29C43/021 ,  B29C43/18 ,  B29K2709/08 ,  H01L24/97 ,  H01L33/56 ,  H01L2224/48091 ,  H01L2224/49107 ,  H01L2924/12041 ,  H01L2924/15787 ,  H01L2933/005 ,  H01L2924/00014 ,  H01L2924/00

摘要： A method of manufacturing a LED lamp that is formed by sealing a LED element mounted on a substrate with glass, includes a mounting process for mounting the LED element on the substrate, a sealing member preparation process for preparing a glass sealing member that includes a concave portion being capable of housing the LED element, and a sealing process wherein the sealing member is arranged so that a forming surface of the concave portion faces the LED element, the sealing member is bonded to the substrate by thermal compression bonding, and the forming surface of the concave portion is made along the LED element.

摘要翻译： 一种通过用玻璃封装安装在基板上的LED元件形成的LED灯的制造方法，包括将LED元件安装在基板上的安装工序，制造玻璃密封部件的密封部件准备工序，该玻璃密封部件包括凹部 能够容纳LED元件的部分和密封处理，其中密封构件布置成使得凹部的成形表面面向LED元件，密封构件通过热压接而结合到基板，并且成形表面 沿着LED元件形成凹部。

公开(公告)号：US20100062558A1

公开(公告)日：2010-03-11

申请号：US12585015

申请日：2009-08-31

申请人： Koichi Goshonoo ,  Miki Moriyama ,  Taro Hitosugi ,  Tetsuya Hasegawa ,  Junpei Kasai

发明人： Koichi Goshonoo ,  Miki Moriyama ,  Taro Hitosugi ,  Tetsuya Hasegawa ,  Junpei Kasai

IPC分类号： H01L21/283

CPC分类号： H01L33/44 ,  H01L33/0095

摘要： When a p-layer 4 composed of GaN is maintained at ordinary temperature and TNO is sputtered thereon by an RF magnetron sputtering method, a laminated TNO layer 5 is in an amorphous state. Then, there is included a step of thermally treating the amorphous TNO layer in a reduced-pressure atmosphere where hydrogen gas is substantially absent to thereby crystallize the TNO layer. At the sputtering, an inert gas is passed through together with oxygen gas, and volume % of the oxygen gas contained in the gas passed through is 0.10 to 0.15%. In this regard, oxygen partial pressure is 5×10−3 Pa or lower. The temperature of the thermal treatment is 500° C. for about 1 hour.

摘要翻译： 当由氮化镓组成的p层4保持在常温下并通过RF磁控溅射法溅射TNO时，层压TNO层5处于非晶态。 然后，包括在减压气氛中热处理无定形TNO层的步骤，其中基本上不存在氢气，从而使TNO层结晶。 在溅射时，惰性气体与氧气一起通过，所通过的气体中所含的氧气的体积％为0.10〜0.15％。 在这方面，氧分压为5×10 -3 Pa以下。 热处理温度为500℃约1小时。

公开(公告)号：US20090072267A1

公开(公告)日：2009-03-19

申请号：US12232320

申请日：2008-09-15

申请人： Koichi Goshonoo ,  Miki Moriyama

发明人： Koichi Goshonoo ,  Miki Moriyama

IPC分类号： H01L33/00

CPC分类号： H01L27/15

摘要： Provided is a GaN-based semiconductor light-emitting device which does not require an external constant-current circuit. The light-emitting device of the present invention includes a sapphire substrate; an AlN buffer layer formed on the substrate; and an HEMT structure formed on the buffer layer, the HEMT structure including a GaN layer and an Al0.2Ga0.8N layer. On the Al0.2Ga0.8N layer are sequentially formed an n-GaN layer, an MQW light-emitting layer including an InGaN well layer and an AlGaN barrier layer, and a p-GaN layer. A source electrode and an HEMT/LED connection electrode are formed on an exposed portion of the Al0.2Ga0.8N layer. The HEMT/LED connection electrode serves as both the corresponding drain electrode and an electrode for injecting electrons into the n-GaN layer. An ITO transparent electrode is formed on the top surface of the p-GaN layer, and a gold pad electrode is formed on a portion of the top surface of the transparent electrode.

摘要翻译： 提供了不需要外部恒流电路的GaN系半导体发光装置。 本发明的发光装置包括：蓝宝石基板; 形成在所述基板上的AlN缓冲层; 以及形成在缓冲层上的HEMT结构，所述HEMT结构包括GaN层和Al0.2Ga0.8N层。 在Al0.2Ga0.8N层依次形成n-GaN层，包含InGaN阱层和AlGaN阻挡层的MQW发光层和p-GaN层。 源极和HEMT / LED连接电极形成在Al0.2Ga0.8N层的暴露部分上。 HEMT / LED连接电极用作相应的漏电极和用于将电子注入到n-GaN层中的电极。 在p-GaN层的顶表面上形成ITO透明电极，并且在透明电极的顶表面的一部分上形成金焊盘电极。

公开(公告)号：US07947521B2

公开(公告)日：2011-05-24

申请号：US12078066

申请日：2008-03-26

申请人： Koichi Goshonoo ,  Miki Moriyama

发明人： Koichi Goshonoo ,  Miki Moriyama

IPC分类号： H01L21/00

CPC分类号： H01L33/405 ,  H01L21/0254 ,  H01L21/0262 ,  H01L33/32

摘要： A method for forming an electrode for Group-III nitride compound semiconductor light-emitting devices includes a step of forming a first electrode layer having an average thickness of less than 1 nm on a Group-III nitride compound semiconductor layer, the first electrode layer being made of a material having high adhesion to the Group-III nitride compound semiconductor layer or low contact resistance with the Group-III nitride compound semiconductor layer and also includes a step of forming a second electrode layer made of a highly reflective metal material on the first electrode layer.

摘要翻译： 用于形成III族氮化物化合物半导体发光器件的电极的方法包括在III族氮化物化合物半导体层上形成平均厚度小于1nm的第一电极层的步骤，第一电极层为 由与III族氮化物化合物半导体层具有高粘附性的材料或与III族氮化物化合物半导体层具有低接触电阻的材料制成，并且还包括在第一层上形成由高反射性金属材料制成的第二电极层的步骤 电极层。

公开(公告)号：US20100078660A1

公开(公告)日：2010-04-01

申请号：US12585938

申请日：2009-09-29

申请人： Miki Moriyama ,  Koichi Goshonoo

发明人： Miki Moriyama ,  Koichi Goshonoo

IPC分类号： H01L33/00

CPC分类号： H01L33/14 ,  H01L33/32

摘要： An n-type layer of a light-emitting device has a structure in which a first n-type layer, a second n-type layer and a third n-type layer are sequentially laminated in this order on a sapphire substrate, and an n-electrode composed of V/Al is formed on the second n-type layer. The first n-type layer and the second n-type layer are n-GaN, and the third n-type layer is n-InGaN. The n-type impurity concentration of the second n-type layer is higher than that of the first n-type layer and the third n-type layer.

摘要翻译： 发光器件的n型层具有这样的结构，其中第一n型层，第二n型层和第三n型层依次层叠在蓝宝石衬底上，并且n 由V / Al构成的电极形成在第二n型层上。 第一n型层和第二n型层是n-GaN，第三n型层是n-InGaN。 第二n型层的n型杂质浓度高于第一n型层和第三n型层的n型杂质浓度。

公开(公告)号：US07564062B2

公开(公告)日：2009-07-21

申请号：US10695439

申请日：2003-10-29

申请人： Tomohiro Sakai ,  Miki Moriyama ,  Masanori Murakami ,  Naoki Shibata

发明人： Tomohiro Sakai ,  Miki Moriyama ,  Masanori Murakami ,  Naoki Shibata

IPC分类号： H01L31/0312

CPC分类号： H01L21/0485 ,  H01L29/1608 ,  H01L29/45 ,  H01L29/861

摘要： A p-type electrode containing a first electrode material exhibiting an eutectic reaction at a temperature of 600° C. or lower, and a second electrode material of aluminum (Al).

摘要翻译： 包含在600℃以下的温度下显示共晶反应的第一电极材料和铝（Al）的第二电极材料的p型电极。

公开(公告)号：US09087969B2

公开(公告)日：2015-07-21

申请号：US12659565

申请日：2010-03-12

申请人： Satoshi Wada ,  Miki Moriyama

发明人： Satoshi Wada ,  Miki Moriyama

IPC分类号： H01L33/00 ,  H01L33/56 ,  F21K99/00 ,  H01L23/00 ,  F21V29/74 ,  F21V29/89 ,  H01L25/075 ,  F21Y101/02 ,  F21Y103/00 ,  F21Y105/00

CPC分类号： H01L33/56 ,  F21K9/00 ,  F21V29/74 ,  F21V29/89 ,  F21Y2103/10 ,  F21Y2105/10 ,  F21Y2115/10 ,  H01L24/97 ,  H01L25/0753 ,  H01L2924/15787 ,  H01L2924/00

摘要： A light-emitting device includes a substrate, a light-emitting element mounted on a first flat surface of the substrate, and a glass sealing member for sealing the light-emitting element, wherein the sealing member is in contact with the first flat surface and a side surface of the substrate and a second flat surface of the surface opposite to the first flat surface is exposed.

摘要翻译： 发光装置包括基板，安装在基板的第一平面上的发光元件和用于密封发光元件的玻璃密封构件，其中密封构件与第一平坦表面接触， 衬底的侧表面和与第一平坦表面相对的表面的第二平坦表面露出。

公开(公告)号：US08773017B2

公开(公告)日：2014-07-08

申请号：US13607319

申请日：2012-09-07

申请人： Satoshi Wada ,  Miki Moriyama

发明人： Satoshi Wada ,  Miki Moriyama

IPC分类号： H01J1/62 ,  H01J63/04

CPC分类号： H01L33/58 ,  H01L25/0753 ,  H01L33/501 ,  H01L33/56 ,  H01L33/60 ,  H01L2224/16225 ,  H01L2924/181 ,  H01L2933/005 ,  H01L2924/00012

摘要： The present invention provides a glass-sealed LED lamp which includes a mounting substrate, an LED chip mounted on the mounting substrate, a glass sealing body, and a glass bonding portion bonding the LED chip to a portion of a lower surface side of the glass sealing body. A clearance between a lower surface of the glass sealing body and an upper surface of the mounting substrate side, which causes total reflection at an interface between the glass sealing body and the clearance, is formed outward of the portion of the lower surface side of the glass sealing body.

摘要翻译： 本发明提供一种玻璃密封LED灯，其包括安装基板，安装在安装基板上的LED芯片，玻璃密封体和将LED芯片接合到玻璃的下表面侧的一部分的玻璃接合部 密封体。 玻璃密封体的下表面与安装基板侧的上表面之间的间隙在玻璃密封体与间隙之间的界面处形成全反射，形成在该玻璃密封体的下表面侧的部分的外侧 玻璃密封体。