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公开(公告)号：US06829277B2
公开(公告)日：2004-12-07
申请号：US10195104
申请日：2002-07-15
IPC分类号： H01S500
CPC分类号： H01S5/1228 , H01S5/0287
摘要： Disclosed is a distributed feedback semiconductor laser device having a resonator for oscillating a laser beam and a laser module which is provided with the semiconductor laser device. The semiconductor laser device comprises a diffraction grating, formed inside the resonator, for periodically changing only an extinction coefficient k or both a real refractive index n and the extinction coefficient k in a complex refractive index N expressed by N=n−ik where i is an imaginary unit. The resonator has a first facet having a first reflectance and a second facet opposite to the first facet and having a second reflectance. The first reflectance is smaller than the second reflectance and equal to or larger than 10%, preferably equal to or smaller than 20%.
摘要翻译： 公开了一种具有用于振荡激光束的谐振器的分布式反馈半导体激光器件和设置有半导体激光器件的激光器模块。 半导体激光器件包括形成在谐振器内部的衍射光栅，用于周期性地仅改变由N = n-ik表示的复折射率N中的实际折射率n和实际折射率n以及消光系数k，其中i是 一个虚构的单位。 谐振器具有具有第一反射率的第一刻面和与第一小面相反并且具有第二反射率的第二小面。 第一反射率小于第二反射率，等于或大于10％，优选等于或小于20％。
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公开(公告)号：US06580740B2
公开(公告)日：2003-06-17
申请号：US09906842
申请日：2001-07-18
IPC分类号： H01S500
CPC分类号： H01S5/12 , H01S5/02284 , H01S5/02415 , H01S5/02438 , H01S5/0601 , H01S5/06258 , H01S5/10 , H01S5/1203 , H01S5/141 , H01S5/146 , H01S5/2219
摘要： A semiconductor laser device includes a semiconductor substrate, an active region formed on the semiconductor substrate and configured to radiate light having a predetermined wavelength range, and a wavelength selecting structure configured to select a first portion of the radiated light for emitting from the semiconductor laser device. An absorption region is located in a vicinity of the active region and configured to selectively absorb a second portion of the radiated light, and the first portion of the radiated light has a different wavelength than the second portion of the radiated light. The absorption region may be an integrated diffraction grating or a selective absorption region of the laser device. The semiconductor laser device may be used in an optical fiber amplifier such as a raman amplifier, a wavelength division multiplexing system, or a semiconductor laser module.
摘要翻译： 半导体激光器件包括半导体衬底，形成在半导体衬底上并被配置为辐射具有预定波长范围的光的有源区，以及波长选择结构，被配置为选择用于从半导体激光器件发射的辐射光的第一部分 。 吸收区域位于有源区域附近，并被配置为选择性地吸收辐射光的第二部分，并且辐射光的第一部分具有与辐射光的第二部分不同的波长。 吸收区域可以是激光装置的集成衍射光栅或选择性吸收区域。 半导体激光器件可以用在诸如拉曼放大器，波分复用系统或半导体激光器模块的光纤放大器中。
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公开(公告)号：US07453100B2
公开(公告)日：2008-11-18
申请号：US10228136
申请日：2002-08-27
IPC分类号： H01L33/00
CPC分类号： H01S5/12 , H01S5/0224 , H01S5/02284 , H01S5/02415 , H01S5/068 , H01S5/2275
摘要： A DFB laser assembly including both a DFB laser device, with a buried heterostructure having a cavity length of 400 μm, a differential resistance of 4Ω, an emission wavelength of 1550 nm, and a thermal resistance of 50K/watt or less, and a heat sink mounting the DFB laser device in a junction-down structure so that the DFB laser device has a wavelength/current coefficient at 5 picometers/milli-ampere or less.
摘要翻译： DFB激光器组件包括DFB激光器件，具有400μm的腔长度的掩埋异质结构，40mega的差分电阻，1550nm的发射波长和50K /瓦或更低的热阻，以及热 将DFB激光器件沉入安装在结合下降结构中，使得DFB激光器件的波长/电流系数为5皮米/毫安或更小。
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4.发明授权公开(公告)号：US06782022B2
公开(公告)日：2004-08-24
申请号：US10189481
申请日：2002-07-08
IPC分类号： H01S500
CPC分类号： H01S5/12
摘要： A semiconductor laser includes a resonant cavity with a cavity length, an active layer structure provided within the resonant cavity and configured to radiate light in an optical gain distribution having a peak wavelength, an embedding layer provided within the resonant cavity and having a refractive index, and a diffraction grating embedded within the embedding layer and having a bandgap wavelength and a refractive index, the diffraction grating configured to select an emission wavelength of the resonant cavity independently of the peak wavelength in the optical gain distribution of the active layer structure. The embedding layer and diffraction grating are configured to provide operational characteristics satisfying the relationship 0
摘要翻译： 半导体激光器包括具有空腔长度的谐振腔，设置在谐振腔内的有源层结构，并且被配置为辐射具有峰值波长的光学增益分布中的光，设置在谐振腔内并具有折射率的嵌入层， 以及嵌入在所述嵌入层内并具有带隙波长和折射率的衍射光栅，所述衍射光栅被配置为在所述有源层结构的光学增益分布中独立于所述峰值波长选择所述谐振腔的发射波长。 嵌入层和衍射光栅被配置为提供满足关系0
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公开(公告)号：US06661828B2
公开(公告)日：2003-12-09
申请号：US09793881
申请日：2001-02-28
IPC分类号： H01S308
CPC分类号： H01S5/12 , H01S5/2275
摘要： A DFB Laser of buried hetero type with a lasing wavelength of 1550 nm, having on an InP substrate a laminated structure of an InP buffer layer, an active layer, a 200-nm-thickness InP spacer layer, a 240-nm-period diffraction grating made of a 20-nm-thickness GaInAsP layer, and an InP first cladding layer in which diffraction grating is buried. The peak wavelength &lgr;max of the optical gain distribution of the active layer is approximately 1530 nm. The bandgap wavelength of the diffraction grating is approximately 1510 nm. The laminated structure is etched into mesa stripes, on both sides of which are formed p/n-separated current blocking regions. Since the diffraction grating is formed of GaInAsP having &lgr;g of approximately 1510 nm, little absorption occurs at wavelengths around the lasing wavelength 1550 nm. The absorption is coefficient with respect to the peak wavelength of the optical gain distribution of the active layer is greater than the absorption coefficient with respect to the lasing wavelength.
摘要翻译： 具有1550nm的激光波长的埋入异型的DFB激光器，在InP衬底上具有InP缓冲层，有源层，200nm厚的InP间隔层，240nm周期衍射 由20nm厚度的GaInAsP层制成的光栅以及掩埋衍射光栅的InP第一包层。 有源层的光学增益分布的峰值波长lambdamax约为1530nm。 衍射光栅的带隙波长约为1510nm。 层压结构被蚀刻成台面条纹，其两侧形成p / n分离的电流阻挡区域。 由于衍射光栅由具有大约1510nm的兰德的GaInAsP形成，所以在激光波长1550nm附近的波长处几乎不发生吸收。 吸收是相对于有源层的光学增益分布的峰值波长的系数大于相对于激光波长的吸收系数。
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