公开(公告)号：US09608217B2

公开(公告)日：2017-03-28

申请号：US14396023

申请日：2012-04-27

申请人： Ken-ichi Nakayama ,  Junji Kido ,  Ryotaro Akiba ,  Naomi Oguma ,  Naoki Hirata

发明人： Ken-ichi Nakayama ,  Junji Kido ,  Ryotaro Akiba ,  Naomi Oguma ,  Naoki Hirata

IPC分类号： H01L51/00 ,  H01L51/05 ,  H01L51/10

CPC分类号： H01L51/0504 ,  H01L51/0036 ,  H01L51/105 ,  H01L2251/301 ,  H01L2251/308

摘要： The present invention provides a transistor element having a laminated structure, the laminated structure comprising a sheet-like base electrode being arranged between an emitter electrode and a collector electrode; at least one p-type organic semiconductor layer being provided on each of the surface and the back sides of the base electrode; and a current transmission promotion layer being formed, on each of the surface and back sides of the base electrode, between the base electrode and the p-type organic semiconductor layer or layers provided on each of the surface and back sides of the base electrode. According to the present invention, it becomes possible to provide a transistor element (MBOT) that is, in particular, stably supplied through a simple production process, has a structure capable of being mass-produced, and has a large current modulation effect and an excellent ON/OFF ratio at a low voltage in the emitter electrode and the collector electrode.