公开(公告)号：US20040150002A1

公开(公告)日：2004-08-05

申请号：US10354687

申请日：2003-01-30

申请人： SMART PIXEL, INC.

发明人： Christoph H. Grein ,  Silviu Velicu ,  Sivalingam Sivananthan

IPC分类号： H01L027/148 ,  H01L029/768 ,  H01L031/0328 ,  H01L031/0336

CPC分类号： H01L31/101 ,  B82Y20/00 ,  H01L31/035236 ,  H01L31/1032 ,  H01L31/109

摘要： A photosensitive diode has an active region defining a majority carrier of a first conductivity type and a minority carrier of a second conductivity type. At least one extraction region is disposed on a first side of the active region and has a majority carrier of the second conductivity type. Carriers of the second conductivity type are extracted from the active region and into the extraction region under a condition of reverse bias. At least one exclusion region is disposed on a second side of the active region and has a majority carrier of the first conductivity type. The exclusion region prevents entry of its minority carriers, which are of the second conductivity type, into the active region while in a condition of reverse bias. The exclusion region includes a superlattice with a plurality of layers.

摘要翻译： 光敏二极管具有限定第一导电类型的多数载流子和第二导电类型的少数载流子的有源区。 至少一个提取区域设置在有源区域的第一侧上并且具有第二导电类型的多数载流子。 第二导电类型的载体在反向偏压的条件下从有源区域提取并进入提取区域。 至少一个排除区域设置在有源区域的第二侧上并且具有第一导电类型的多数载流子。 排斥区域在反向偏压的条件下防止其第二导电类型的少数载流子进入有源区域。 排除区域包括具有多个层的超晶格。