公开(公告)号：US08569889B1

公开(公告)日：2013-10-29

申请号：US13024219

申请日：2011-02-09

申请人： Shiguo Zhang ,  Sandrio Elim ,  Ling Bao

发明人： Shiguo Zhang ,  Sandrio Elim ,  Ling Bao

IPC分类号： H01L23/485

CPC分类号： H01L24/03 ,  H01L24/05 ,  H01L2224/0345 ,  H01L2224/03848 ,  H01L2224/05083 ,  H01L2224/05166 ,  H01L2224/05169 ,  H01L2224/05644 ,  H01S5/022 ,  H01S5/0425 ,  H01L2924/00014 ,  H01L2924/00012

摘要： A metallization layer for a semiconductor device includes a first layer made of Pt and having a thickness greater than or equal to 15 Å and less than or equal to 50 Å, and a second layer formed on the first layer and made of a plurality of metallic sub-layers such as Ti/Pt/Au. A semiconductor device fabricated from the metallization layer includes a semiconductor substrate having a top layer and mesa structure and corresponding surface for securing an insulating layer and a corresponding exposed surface, and wherein the metallization layer is deposited over the insulating layer and exposed surface. Methods for forming the metallization layer are also disclosed.

摘要翻译： 用于半导体器件的金属化层包括由Pt制成并具有大于或等于并且小于或等于50的厚度的第一层，以及形成在第一层上并由多个金属制成的第二层 子层如Ti / Pt / Au。 由金属化层制造的半导体器件包括具有顶层和台面结构的半导体衬底和用于固定绝缘层和相应的暴露表面的相应表面，并且其中金属化层沉积在绝缘层和暴露表面上。 还公开了形成金属化层的方法。