公开(公告)号：US07982258B2

公开(公告)日：2011-07-19

申请号：US12344436

申请日：2008-12-26

申请人： Cheol-Sang Kwak

发明人： Cheol-Sang Kwak

IPC分类号： H01L29/78 ,  H01L21/336

CPC分类号： H01L29/7881 ,  H01L27/115 ,  H01L27/11519

摘要： A flash memory device and a method for manufacturing the device includes forming a device isolation layer in a semiconductor substrate defining active regions, forming a control gate layer over the entire upper surface of the semiconductor substrate, forming a gate mask over the control gate layer, the gate mask being used to provide gate lines on the device isolation layer with grooves at positions opposite each other, and forming the grooves by etching the control gate layer using the gate mask as an etching mask, and forming the gate lines on the device isolation layer. A common source line can be more easily defined during a SAS process including photography and etching processes, and a reduced source resistance can be accomplished, resulting in an improvement in characteristics of the flash memory device.

摘要翻译： 闪存器件及其制造方法包括在限定有源区的半导体衬底上形成器件隔离层，在半导体衬底的整个上表面上形成控制栅极层，在控制栅极层上形成栅极掩模， 栅极掩模用于在器件隔离层上提供栅极线，在相互相对的位置处具有沟槽，并且通过使用栅极掩模作为蚀刻掩模蚀刻控制栅极层来形成沟槽，并且在器件隔离上形成栅极线 层。 可以在包括摄影和蚀刻工艺的SAS工艺期间更容易地定义公共源极线，并且可以实现降低的源极电阻，导致闪存器件的特性的改善。

公开(公告)号：US20060194906A1

公开(公告)日：2006-08-31

申请号：US11336930

申请日：2006-01-23

申请人： Dong Kim ,  Seung Lee ,  Sang Kwak ,  Yong Ahn

发明人： Dong Kim ,  Seung Lee ,  Sang Kwak ,  Yong Ahn

IPC分类号： C08K5/24

CPC分类号： C08F220/32 ,  C08F220/26 ,  C08F230/08 ,  C08J3/243 ,  Y02P20/582

摘要： This invention provides a thermally curable resin copolymer (A), composed mainly of an ethylenically unsaturated monomer (a-1), which produces an acid via decomposition at 150° C. or more, an ethylenically unsaturated monomer (a-2) containing an epoxy group copolymerizable with the ethylenically unsaturated monomer (a-1), and an ethylenically unsaturated monomer (a-3) having a reactive silyl group; a thermally curable resin composition including the thermally curable resin copolymer; a cured film formed from the composition; and a liquid crystal display including the cured film. The thermally curable resin composition has extended storage stability and can be formed into the cured film having good adhesion to a substrate.

摘要翻译： 本发明提供一种主要由烯键式不饱和单体（a-1）组成的热固性树脂共聚物（A），其通过在150℃以上分解而产生酸，含有 可与烯属不饱和单体（a-1）共聚的环氧基和具有反应性甲硅烷基的烯属不饱和单体（a-3） 包含该热固性树脂共聚物的热固性树脂组合物; 由该组合物形成的固化膜; 以及包括固化膜的液晶显示器。 热固性树脂组合物具有延长的储存稳定性，并且可以形成具有对基材的良好粘附性的固化膜。

公开(公告)号：US20060130785A1

公开(公告)日：2006-06-22

申请号：US11302083

申请日：2005-12-12

申请人： Dong Han ,  Hyeong Ahn ,  Jee Chang ,  Sang Kwak

发明人： Dong Han ,  Hyeong Ahn ,  Jee Chang ,  Sang Kwak

IPC分类号： F01L9/04

CPC分类号： F01L9/04 ,  F01L2009/0448 ,  F01L2009/0469

摘要： A linear EMV actuator uses a permanent magnet and an electromagnet in which EMV operation for opening/closing an exhaust valve and an intake valve makes valve operations linear. As a result, the valve undergoes a soft landing and active control of an amount of opening of the valve. The linear EMV actuator includes an upper core and a lower core, an armature, an actuator spring and a valve spring. Also included are a permanent magnet, an upper coil and a lower coil connected to each other in series thereby forming one electromagnet, a displacement sensor, and a position controller.

摘要翻译： 线性EMV致动器使用永磁体和电磁体，其中用于打开/关闭排气阀和进气阀的EMV操作使阀门操作成线性。 结果，阀经过软着陆并主动控制阀的打开量。 线性EMV致动器包括上芯和下芯，电枢，致动器弹簧和阀弹簧。 还包括永磁体，上线圈和下线圈串联连接，从而形成一个电磁体，位移传感器和位置控制器。

公开(公告)号：US20050106813A1

公开(公告)日：2005-05-19

申请号：US10745165

申请日：2003-12-23

申请人： Seong Lee ,  Sang Kwak ,  Sang Park

发明人： Seong Lee ,  Sang Kwak ,  Sang Park

IPC分类号： H01L21/76 ,  H01L21/336 ,  H01L21/461 ,  H01L21/8234 ,  H01L21/8247 ,  H01L27/08 ,  H01L27/088 ,  H01L27/10 ,  H01L27/105 ,  H01L27/115 ,  H01L29/788 ,  H01L29/792

CPC分类号： H01L27/115 ,  H01L27/105 ,  H01L27/11526 ,  H01L27/11546

摘要： Provided is a method of manufacturing a flash memory device. In a flash memory device using a self-aligned shallow trench isolation scheme, a buffer oxide layer is formed between a first polysilicon layer and a nitride layer. After a polishing process for forming a field oxide film is performed, a buffer oxide layer is used as an etch-prevention layer in the process of stripping the nitride layer and the buffer oxide layer is stripped in a cleaning process before a second polysilicon layer is deposited. It is thus possible not only to prevent phosphorous ions contained in an H3PO4 solution used in the process of stripping the nitride layer from diffusing into the grain boundary of the first polysilicon layer, but also to reduce the time when the first polysilicon layer is exposed to a HF cleaner used in the cleaning process before the second polysilicon layer is deposited. Therefore, the present invention has effects that it can enhance the properties of a gate oxide layer and a gate electrode by minimizing an attack of a fluorine radical contained in the HF cleaner against the first polysilicon layer.

摘要翻译： 提供一种制造闪速存储器件的方法。 在使用自对准浅沟槽隔离方案的闪存器件中，在第一多晶硅层和氮化物层之间形成缓冲氧化物层。 在进行用于形成场氧化膜的抛光工艺之后，在剥离氮化物层的过程中使用缓冲氧化物层作为防蚀层，并且在第二多晶硅层为第二多晶硅层之前在清洁过程中剥离缓冲氧化物层 存放 因此，不仅可以防止在剥离氮化物层的过程中使用的H 3 PO 4·4溶液中所含的磷离子扩散到第一 而且在第二多晶硅层沉积之前也减少了第一多晶硅层暴露于清洁工艺中使用的HF清洁剂的时间。 因此，本发明具有通过使包含在HF清洁器中的氟自由基相对于第一多晶硅层的侵蚀最小化来提高栅极氧化物层和栅电极的性质的效果。

公开(公告)号：US20090166707A1

公开(公告)日：2009-07-02

申请号：US12344436

申请日：2008-12-26

申请人： Cheol-Sang KWAK

发明人： Cheol-Sang KWAK

IPC分类号： H01L29/78 ,  H01L21/336

CPC分类号： H01L29/7881 ,  H01L27/115 ,  H01L27/11519

摘要： A flash memory device and a method for manufacturing the device includes forming a device isolation layer in a semiconductor substrate defining active regions, forming a control gate layer over the entire upper surface of the semiconductor substrate, forming a gate mask over the control gate layer, the gate mask being used to provide gate lines on the device isolation layer with grooves at positions opposite each other, and forming the grooves by etching the control gate layer using the gate mask as an etching mask, and forming the gate lines on the device isolation layer. A common source line can be more easily defined during a SAS process including photography and etching processes, and a reduced source resistance can be accomplished, resulting in an improvement in characteristics of the flash memory device.

摘要翻译： 闪存器件及其制造方法包括在限定有源区的半导体衬底上形成器件隔离层，在半导体衬底的整个上表面上形成控制栅极层，在控制栅极层上形成栅极掩模， 栅极掩模用于在器件隔离层上提供栅极线，在相互相对的位置处具有沟槽，并且通过使用栅极掩模作为蚀刻掩模蚀刻控制栅极层来形成沟槽，并且在器件隔离上形成栅极线 层。 可以在包括摄影和蚀刻工艺的SAS工艺期间更容易地定义公共源极线，并且可以实现降低的源极电阻，导致闪存器件的特性的改善。

公开(公告)号：US20060031793A1

公开(公告)日：2006-02-09

申请号：US11024630

申请日：2004-12-30

申请人： Sang Kwak

发明人： Sang Kwak

IPC分类号： G06F17/50

CPC分类号： G06F17/5036

摘要： A system and method for simulating a diode device measures electrical characteristics of a plurality of diodes; normalizes the measured electrical characteristics of the diode; extracts a plurality of device parameters of each of the diodes from the normalized characteristics; converts the device parameters of each of the diodes to values per unit area; obtains a linear equation from the converted device parameters; and predicts electrical characteristics of certain diode area from the linear equation and the device parameters. The linear equation is obtained by a least square method of the regression analysis to extract the device parameters of each of the diodes which are converted to value per unit area. The device parameters are obtained by a simultaneous equation which is derived from both a diode having larger area component and a diode having greater length component.

公开(公告)号：US5697828A

公开(公告)日：1997-12-16

申请号：US617294

申请日：1996-03-18

申请人： Robert Smathers ,  Steven Vetter ,  Sheldon Goldberg ,  Sang Kwak ,  Jordan Kort

发明人： Robert Smathers ,  Steven Vetter ,  Sheldon Goldberg ,  Sang Kwak ,  Jordan Kort

IPC分类号： A45C1/12

CPC分类号： A45C1/12

摘要： A toy coin bank that directs a user to launch a coin at a target portion is disclosed. The toy coin bank includes an adjustable launching platform or tray to permit the user to decide the appropriate launch position. The toy bank also includes an audio signal to alert the user of his or her success in hitting the target.

摘要翻译： 公开了一种指引用户在目标部分发射硬币的玩具硬币库。 玩具硬币组包括可调节的发射平台或托盘，以允许用户决定适当的发射位置。 玩具银行还包括一个音频信号，提醒用户他或她成功击中目标。

公开(公告)号：USD353166S

公开(公告)日：1994-12-06

申请号：US13834

申请日：1993-10-04

申请人： Sang Kwak

设计人： Sang Kwak

公开(公告)号：US09114327B2

公开(公告)日：2015-08-25

申请号：US13270178

申请日：2011-10-10

申请人： Richelle Moh ,  Garrett Sander ,  Ivy Bleser ,  David Sheltman ,  Sang Kwak ,  Elena Velasquez

发明人： Richelle Moh ,  Garrett Sander ,  Ivy Bleser ,  David Sheltman ,  Sang Kwak ,  Elena Velasquez

IPC分类号： A63H29/00 ,  A63H33/26 ,  A63H7/00 ,  A63H17/00 ,  A63H18/02 ,  A63H33/42

CPC分类号： A63H33/26 ,  A63H7/00 ,  A63H17/00 ,  A63H18/028 ,  A63H33/42

摘要： A play set configured for use with an item removably secured to a base item having a plurality of wheels and a ferromagnetic material disposed therein is disclosed herein, the play set having: a plurality of launchers each being configured to launch the item and the base item along one of a plurality of track segments, wherein each of the track segments terminate at a central area; and at least one magnet disposed in the central area, wherein the base item is attracted to the at least one magnet when it reaches the central area after traversing along one of the plurality of track segments.

摘要翻译： 这里公开了一种被配置为与可拆卸地固定到具有多个车轮的基座物品和设置在其中的铁磁材料的物品一起使用的游戏机，所述游戏机具有：多个发射器，每个发射器被配置为发射所述物品和所述基本物品 沿着多个轨道段中的一个，其中每个轨道段终止于中心区域; 以及设置在所述中央区域中的至少一个磁体，其中当所述基本物品在沿着所述多个轨道段中的一个穿过之后到达所述中心区域时被吸引到所述至少一个磁体。

公开(公告)号：US20080054337A1

公开(公告)日：2008-03-06

申请号：US11848610

申请日：2007-08-31

申请人： CHEOL SANG KWAK

发明人： CHEOL SANG KWAK

IPC分类号： H01L29/788 ,  H01L21/336

CPC分类号： H01L29/42324 ,  H01L29/40114 ,  H01L29/513 ,  H01L29/7881

摘要： Disclosed is a flash memory device comprising a semiconductor substrate in which a channel region is formed, an ONO (oxide-nitride-oxide) layer on the semiconductor substrate, a floating gate on the ONO layer, an anti-reflection layer on the floating gate; and a control gate on the anti-reflection layer. The channel region can be ion implanted before forming the floating gate.

摘要翻译： 公开了一种闪存器件，其包括其中形成沟道区的半导体衬底，半导体衬底上的ONO（氧化物 - 氧化物 - 氧化物）层，ONO层上的浮置栅极，浮置栅极上的抗反射层 ; 和防反射层上的控制栅极。 在形成浮栅之前可以离子注入沟道区。