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    METHOD FOR CLEANING WAFER
    3.
    发明申请
    METHOD FOR CLEANING WAFER 审中-公开
    清洗方法

    公开(公告)号：US20090000649A1

    公开(公告)日：2009-01-01

    申请号：US12145538

    申请日：2008-06-25

    申请人： Sang-Seop Lee

    发明人： Sang-Seop Lee

    IPC分类号： B08B3/08 ,  B08B3/04

    CPC分类号： C11D3/3947 ,  C11D7/08 ,  C11D11/0047 ,  H01L21/0206 ,  H01L29/665 ,  H01L29/7833

    摘要： A method for cleaning a wafer by removing residues from the surface of a wafer where metals are reacted to form compounds. The cleaning method may include first residue from predetermined areas of the wafer (e.g., uppermost surface of the gate electrode and/or source/drain regions where suicides are formed) using at least one selected from a sulfuric acid cleaning solution, a first mixed cleaning solution and a second mixed cleaning solution, then removing oxide films from the predetermined areas using a diluted hydrofluoric acid cleaning solution, and then removing a second residue derived from the removal of the oxide films using the first mixed cleaning solution. Accordingly, the method efficiently removes the first and second residues left on the surfaces of the predetermined areas.

    摘要翻译： 一种通过从金属表面上除去金属反应形成化合物的残留物来清洗晶片的方法。 清洁方法可以包括使用选自硫酸清洗溶液，第一混合清洗液中的至少一种的晶片的预定区域（例如，栅电极的最上表面和/或形成自杀剂的源/漏区域）的第一残留物 溶液和第二混合清洗溶液，然后使用稀释的氢氟酸清洗溶液从预定区域除去氧化膜，然后使用第一混合清洗溶液除去衍生自除去氧化膜的第二残余物。 因此，该方法有效地去除了留在预定区域表面上的第一和第二残留物。

    TRENCH LINE FOR THE DISCONNECTION OF A SOLAR CELL
    4.
    发明申请
    TRENCH LINE FOR THE DISCONNECTION OF A SOLAR CELL 审中-公开
    用于断开太阳能电池的TRENCH线

    公开(公告)号：US20120145225A1

    公开(公告)日：2012-06-14

    申请号：US13390732

    申请日：2010-08-13

    申请人： Sang Seop Lee ,  Seok Hyun Song ,  Gil Joo Kang ,  Jun Young PARK ,  Jong-Su Shin

    发明人： Sang Seop Lee ,  Seok Hyun Song ,  Gil Joo Kang ,  Jun Young PARK ,  Jong-Su Shin

    IPC分类号： H01L27/142

    CPC分类号： H01L31/068 ,  H01L31/0352 ,  H01L31/186 ,  Y02E10/547 ,  Y02P70/521

    摘要： Provided is a trench line for the disconnection of a solar cell, capable of effectively insulating a semiconductor layer at an upper portion of a substrate from a semiconductor layer at a side portion of the substrate and improving disconnection reliability. The trench line for the disconnection of a solar cell according to the disclosure which electrically insulates the semiconductor layers formed at the upper portion and the side portion of the substrate of the solar cell from each other, includes a plurality of unit trench lines which are disposed to intersect at an upper surface of the substrate of the solar cell. Intersecting points of the intersecting unit trench lines are positioned on the unit trench lines and are positioned at points spaced inwardly from starting points or ending points of the unit trench lines by a predetermined distance.

    摘要翻译： 提供了一种用于断开太阳能电池的沟槽线，其能够有效地将衬底的上部的半导体层与衬底的侧部处的半导体层有效地绝缘，并提高了断开可靠性。 根据本公开的用于断开形成在太阳能电池的上部的上部的半导体层和基板的侧部的半导体层的太阳能电池的断开的沟槽线包括多个单位沟槽线， 以在太阳能电池的基板的上表面相交。 相交单位沟槽线的相交点位于单位沟槽线上，并且位于与单位沟槽线的起始点或终点间隔开预定距离的点处。

    Semiconductor device and manufacturing method thereof
    5.
    发明授权
    Semiconductor device and manufacturing method thereof 有权
    半导体装置及其制造方法

    公开(公告)号：US07939410B2

    公开(公告)日：2011-05-10

    申请号：US12341775

    申请日：2008-12-22

    申请人： Sang Seop Lee

    发明人： Sang Seop Lee

    IPC分类号： H01L21/336

    CPC分类号： H01L29/7813 ,  H01L29/456 ,  H01L29/66727 ,  H01L29/66734

    摘要： A method of manufacturing a semiconductor device including forming a first conductive-type buried layer in a substrate; forming a first conductive-type drift area on the first conductive-type buried layer; forming a gate insulating layer and gate electrodes by selectively removing the first conductive-type drift area; forming a first oxide layer on the substrate and gate electrodes; implanting second conductive-type impurity ions into the substrate; forming a nitride layer on the first oxide layer; forming a second conductive-type well by diffusing the second conductive-type impurity ions while forming a second oxide layer; removing the nitride layer, the second oxide layer, and portions of the first oxide layer; forming first conductive-type source areas at sides of the gate electrode(s); forming a dielectric layer on the oxide layer; forming a trench in the dielectric layer and the oxide layer; forming a source contact in the trench; and forming a drain.

    摘要翻译： 一种制造半导体器件的方法，包括在衬底中形成第一导电型掩埋层; 在第一导电型掩埋层上形成第一导电型漂移区; 通过选择性地去除第一导电型漂移区域形成栅极绝缘层和栅电极; 在所述基板和栅电极上形成第一氧化物层; 将第二导电型杂质离子注入到衬底中; 在所述第一氧化物层上形成氮化物层; 通过在形成第二氧化物层的同时扩散第二导电型杂质离子形成第二导电型阱; 去除氮化物层，第二氧化物层和第一氧化物层的部分; 在栅电极的侧面形成第一导电型源区; 在所述氧化物层上形成介电层; 在介电层和氧化物层中形成沟槽; 在沟槽中形成源极接触; 并形成排水管。

    Semiconductor Device and Manufacturing Method Thereof
    7.
    发明申请
    Semiconductor Device and Manufacturing Method Thereof 有权
    半导体器件及其制造方法

    公开(公告)号：US20090166733A1

    公开(公告)日：2009-07-02

    申请号：US12341775

    申请日：2008-12-22

    申请人： Sang Seop LEE

    发明人： Sang Seop LEE

    IPC分类号： H01L29/78 ,  H01L21/336

    CPC分类号： H01L29/7813 ,  H01L29/456 ,  H01L29/66727 ,  H01L29/66734

    摘要： A method of manufacturing a semiconductor device including forming a first conductive-type buried layer in a substrate; forming a first conductive-type drift area on the first conductive-type buried layer; forming a gate insulating layer and gate electrodes by selectively removing the first conductive-type drift area; forming a first oxide layer on the substrate and gate electrodes; implanting second conductive-type impurity ions into the substrate; forming a nitride layer on the first oxide layer; forming a second conductive-type well by diffusing the second conductive-type impurity ions while forming a second oxide layer; removing the nitride layer, the second oxide layer, and portions of the first oxide layer; forming first conductive-type source areas at sides of the gate electrode(s); forming a dielectric layer on the oxide layer; forming a trench in the dielectric layer and the oxide layer; forming a source contact in the trench; and forming a drain.

    摘要翻译： 一种制造半导体器件的方法，包括在衬底中形成第一导电型掩埋层; 在第一导电型掩埋层上形成第一导电型漂移区; 通过选择性地去除第一导电型漂移区域形成栅极绝缘层和栅电极; 在所述基板和栅电极上形成第一氧化物层; 将第二导电型杂质离子注入到衬底中; 在所述第一氧化物层上形成氮化物层; 通过在形成第二氧化物层的同时扩散第二导电型杂质离子形成第二导电型阱; 去除氮化物层，第二氧化物层和第一氧化物层的部分; 在栅电极的侧面形成第一导电型源区; 在所述氧化物层上形成介电层; 在介电层和氧化物层中形成沟槽; 在沟槽中形成源极接触; 并形成排水管。