公开(公告)号：US5359617A

公开(公告)日：1994-10-25

申请号：US47982

申请日：1993-04-19

申请人： Satoru Kano ,  Kiyoshi Kumata ,  Soichi Owa

发明人： Satoru Kano ,  Kiyoshi Kumata ,  Soichi Owa

IPC分类号： G02F1/35 ,  G02F1/017 ,  G02F1/355 ,  G02F1/37 ,  G02F1/377 ,  H01S3/19

CPC分类号： B82Y20/00 ,  G02F1/01725 ,  G02F1/3556 ,  G02F1/3515 ,  G02F1/3534 ,  G02F1/377 ,  G02F2001/3548

摘要： A multi-quantum well structure with a large second order optical nonlinearity and transparent at short wavelengths of up to 350 nm. is described. Alternating insulator and semiconductor layers are grown on a substrate to form a multi-quantum well structure, such that the potential function for electrons in the semiconductor layers is asymmetric in a direction normal to the substrate. Sub-bands of electrons in the conduction band lead to a large optical nonlinearity with efficient second harmonics generation, and is obtained by an appropriate selection of the width and shape of the well. The structure, preferably packaged on the same substrate of a laser diode, is used as an on-chip source of blue light.

摘要翻译： 具有大二阶光学非线性并且在高达350nm的短波长下是透明的多量子阱结构。 被描述。 交替的绝缘体和半导体层在衬底上生长以形成多量子阱结构，使得半导体层中的电子的潜在功能在垂直于衬底的方向上是不对称的。 导带中的电子的子带导致具有有效的二次谐波产生的大的光学非线性，并且通过适当选择阱的宽度和形状来获得。 优选地封装在激光二极管的相同基板上的结构被用作蓝光的片上源。