公开(公告)号：US5444017A

公开(公告)日：1995-08-22

申请号：US305658

申请日：1994-09-14

申请人： Koh Era ,  Yoshiyuki Suda ,  Satoshi Agawa ,  Osamu Mishima

发明人： Koh Era ,  Yoshiyuki Suda ,  Satoshi Agawa ,  Osamu Mishima

IPC分类号： H01L21/28 ,  H01L29/43 ,  H01L29/45 ,  H01L33/30 ,  H01L33/40 ,  H01L21/283

CPC分类号： H01L29/452 ,  Y10S148/113 ,  Y10S438/932

摘要： An ohmic electrode is formed on a cBN crystal to form a cBN semiconductor device which is used as a solid electronic element. The cBN semiconductor device may be of an n-type, a p-type or a pn junction type wherein molybdenum is deposited onto an n-type doped region of the cBN crystal or platinum is deposited onto a p-type doped region to thereby form an electrode with ohmic characteristic. The deposition of the molybdenum or the platinum is conducted by using a vapor deposition method followed by heating the attached substance at a temperature of 300.degree. C.-1100.degree. C. in an inactive gas atmosphere. The cBN semiconductor device can be used as a solid electronic element or an optoelectronic element for rectifiers, transistors, light emitting diodes and so on and integrated elements thereof.

摘要翻译： 在cBN晶体上形成欧姆电极，形成用作固体电子元件的cBN半导体器件。 cBN半导体器件可以是n型，p型或pn结型，其中钼沉积到cBN晶体的n型掺杂区上，或者铂沉积到p型掺杂区上，从而形成 具有欧姆特性的电极。 通过使用气相沉积法，在惰性气体气氛中，在300℃〜1100℃的温度下加热附着物，进行钼或铂的沉积。 cBN半导体器件可以用作固体电子元件或用于整流器，晶体管，发光二极管等的光电元件及其集成元件。

公开(公告)号：US5414279A

公开(公告)日：1995-05-09

申请号：US124754

申请日：1993-09-22

申请人： Koh Era ,  Yoshiyuki Suda ,  Satoshi Agawa ,  Osamu Mishima

发明人： Koh Era ,  Yoshiyuki Suda ,  Satoshi Agawa ,  Osamu Mishima

IPC分类号： H01L21/28 ,  H01L29/43 ,  H01L29/45 ,  H01L33/30 ,  H01L33/40 ,  H01L23/48 ,  H01L29/46 ,  H01L29/62 ,  H01L29/64

CPC分类号： H01L29/452 ,  Y10S148/113 ,  Y10S438/932

摘要： An ohmic electrode is formed on a cBN crystal to form a cBN semiconductor device which is used as a solid electronic element. The cBN semiconductor device may be of an n-type, a p-type or a pn junction type wherein molybdenum is deposited onto an n-type doped region of the cBN crystal or platinum is deposited onto a p-type doped region to thereby form an electrode with ohmic characteristic. The deposition of the molybdenum or the platinum is conducted by using a vapor deposition method followed by heating the attached substance at a temperature of 300.degree. C.-1100.degree. C. in an inactive gas atmosphere. The cBN semiconductor device can be used as a solid electronic element or an optoelectronic element for rectifiers, transistors, light emitting diodes and so on and integrated elements thereof.

摘要翻译： 在cBN晶体上形成欧姆电极，形成用作固体电子元件的cBN半导体器件。 cBN半导体器件可以是n型，p型或pn结型，其中钼沉积到cBN晶体的n型掺杂区上，或者铂沉积到p型掺杂区上，从而形成 具有欧姆特性的电极。 通过使用气相沉积法，在惰性气体气氛中，在300℃〜1100℃的温度下加热附着物，进行钼或铂的沉积。 cBN半导体器件可以用作固体电子元件或用于整流器，晶体管，发光二极管等的光电元件及其集成元件。