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    High-gain photodetector with separated PN junction and rare earth doped region and a method of forming the same
    1.
    发明授权
    High-gain photodetector with separated PN junction and rare earth doped region and a method of forming the same 有权
    具有分离的PN结和稀土掺杂区的高增益光电探测器及其形成方法

    公开(公告)号：US06943390B2

    公开(公告)日：2005-09-13

    申请号：US10142264

    申请日：2002-05-08

    申请人： Salvatore Coffa ,  Sebania Libertino ,  Ferruccio Frisina

    发明人： Salvatore Coffa ,  Sebania Libertino ,  Ferruccio Frisina

    IPC分类号： H01L31/0288 ,  H01L31/107 ,  H01L27/148

    CPC分类号： H01L31/107 ,  H01L31/0288 ,  Y02B10/10 ,  Y02E10/50

    摘要： The high-gain photodetector is formed in a semiconductor-material body which houses a PN junction and a sensitive region that is doped with rare earths, for example erbium. The PN junction forms an acceleration and gain region separate from the sensitive region. The PN junction is reverse-biased and generates an extensive depletion region accommodating the sensitive region. Thereby, the incident photon having a frequency equal to the absorption frequency of the used rare earth crosses the PN junction, which is transparent to light, can be captured by an erbium ion in the sensitive region, so as to generate a primary electron, which is accelerated towards the PN junction by the electric field present, and can, in turn, generate secondary electrons by impact, according to an avalanche process. Thereby, a single photon can give rise to a cascade of electrons, thus considerably increasing detection efficiency.

    摘要翻译： 高增益光电检测器形成在容纳PN结的半导体材料体和掺杂有稀土（例如铒）的敏感区域中。 PN结形成与敏感区域分离的加速度和增益区域。 PN结被反向偏置并且产生容纳敏感区域的广泛的耗尽区域。 因此，具有等于所使用的稀土的吸收频率的频率的入射光子穿过对光透明的PN结，可以在敏感区域中被铒离子捕获，以便产生一次电子，其中 通过存在的电场而朝向PN结加速，并且根据雪崩过程又可以通过冲击产生二次电子。 因此，单个光子可以产生级联的电子，从而显着提高检测效率。