公开(公告)号：US20100009548A1

公开(公告)日：2010-01-14

申请号：US12438786

申请日：2007-08-21

申请人： Kozo Nakamura ,  Seiichi Shimura ,  Tomoko Nakajima

发明人： Kozo Nakamura ,  Seiichi Shimura ,  Tomoko Nakajima

IPC分类号： H01L21/26

CPC分类号： H01L21/324 ,  H01L21/3225 ,  H01L21/67115

摘要： Provided is a heat treatment method wherein generation of slip dislocation in silicon wafer RTP is suppressed, in order to solve a problem of not sufficiently suppressing generation of slip dislocation of silicon wafers in conventional RTP. A step is provided for suspending temperature rising for 10 seconds or longer at a temperature in a range of over 700° C. to below 950° C., so as to prevent generation of slip dislocation during rapid heating, at least at a silicon wafer portion that contacts with a supporting section of a rapid heating apparatus or at a portion on the outermost circumference section of the silicon wafer.

摘要翻译： 提供了一种热处理方法，其中抑制了硅晶片RTP中的滑移位错的产生，以解决在常规RTP中不能充分抑制硅晶片的滑移位错产生的问题。 提供了一个步骤，用于在超过700℃至低于950℃的温度下将温度上升10秒或更长，以防止在快速加热期间产生滑移位错，至少在硅晶片 与快速加热装置的支撑部分或硅晶片的最外周部分的部分接触的部分。

公开(公告)号：US5708365A

公开(公告)日：1998-01-13

申请号：US703887

申请日：1996-08-27

申请人： Shiro Yoshino ,  Seiichi Shimura ,  Mitsuo Kono

发明人： Shiro Yoshino ,  Seiichi Shimura ,  Mitsuo Kono

IPC分类号： G01R31/265 ,  H01L21/66 ,  G01R27/26

CPC分类号： H01L22/14 ,  G01R31/2656

摘要： A simple method for evaluating the dielectric breakdown of an oxide layer on a silicon wafer is disclosed. The SPV method is utilized to measure a diffusion length L.sub.on of minority carriers when the silicon wafer is illuminated by white light from another source and a diffusion length L.sub.off of the minority carriers when the silicon wafer is not illuminated by white light from another source. A diffusion length L.sub.safe, which is determined by trap sites in the silicon wafer, is calculated from an equation L.sub.safe =(L.sub.off.sup.-2 -L.sub.on.sup.-2).sup.-1/2. Since L.sub.safe has a strong correlation with the dielectric breakdown of the oxide layer, the dielectric breakdown of the oxide layer can be easily evaluated by L.sub.safe during the fabrication of the silicon wafer.

摘要翻译： 公开了一种用于评估硅晶片上的氧化物层的介电击穿的简单方法。 当硅晶片不被来自另一源的白光照射时，利用SPV方法来测量当硅晶片被来自另一源的白光照射时的少数载流子的扩散长度Lon和少数载流子的扩散长度Loff。 通过Lsafe =（Loff-2-Lon-2） - + E，fra 1/2 + EE计算由硅晶片中的陷阱位点确定的扩散长度Lsafe。 由于Lsafe与氧化物层的电介质击穿具有很强的相关性，所以在制造硅晶片期间可以容易地通过Lsafe来评价氧化物层的电介质击穿。