公开(公告)号：US09419013B1

公开(公告)日：2016-08-16

申请号：US14956539

申请日：2015-12-02

Applicant: Dong Sik Lee ,  Woong Seop Lee ,  Seok Cheon Baek ,  Byung Jin Lee

Inventor： Dong Sik Lee ,  Woong Seop Lee ,  Seok Cheon Baek ,  Byung Jin Lee

IPC: H01L27/11 ,  H01L27/115 ,  H01L29/423 ,  H01L23/535

CPC classification number: H01L27/11582 ,  H01L23/535 ,  H01L27/11556 ,  H01L27/1157 ,  H01L27/11575 ,  H01L29/42372

Abstract: A semiconductor device, including gate electrodes perpendicularly stacked on a substrate; channel holes extending perpendicularly to the substrate, the channel holes penetrating through the gate electrodes, the channel holes having a channel region; gate pads extended from the gate electrodes by different lengths; and contact plugs connected to the gate pads, at least a portion of the gate pads having a region having a thickness less than a thickness of the gate electrode connected to the at least a portion of the gate pads.

Abstract translation: 一种半导体器件，包括垂直地堆叠在衬底上的栅电极; 所述通道孔垂直于所述基板延伸，所述通道孔贯穿所述栅电极，所述通道孔具有通道区域; 栅极焊盘从栅电极延伸不同长度; 以及连接到所述栅极焊盘的接触插塞，所述栅极焊盘的至少一部分具有厚度小于连接到所述栅极焊盘的至少一部分的所述栅电极的厚度的区域。