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1.发明申请AQUEOUS ACIDIC FORMULATIONS FOR COPPER OXIDE ETCH RESIDUE REMOVAL AND PREVENTION OF COPPER ELECTRODEPOSITION 有权用于氧化铜蚀刻残渣去除和防止铜电沉积的酸性配方公开(公告)号：US20110195887A1
公开(公告)日：2011-08-11
申请号：US12998296
申请日：2009-10-06
申请人： Glenn Westwood , Seong Jin Hong , Sang In Kim
发明人： Glenn Westwood , Seong Jin Hong , Sang In Kim
CPC分类号： C11D11/0047 , C11D1/72 , C11D3/042 , C11D3/245 , C11D3/30 , C11D3/33 , G03F7/425 , H01L21/02063 , H01L21/02068
摘要： A highly aqueous acidic cleaning composition for copper oxide etch removal from Cu-dual damascene microelectronic structures and wherein that composition prevents or substantially eliminates copper redeposition on the Cu-dual damascene microelectronic structure.
摘要翻译： 一种用于从Cu-双镶嵌微电子结构去除铜氧化物蚀刻的高含量酸性清洁组合物，并且其中所述组合物防止或基本上消除铜重新沉积在Cu-双镶嵌微电子结构上。
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2.发明申请Polysilicon Planarization Solution for Planarizing Low Temperature Poly-Silicon Thin Film Panels 审中-公开用于平面化低温多晶硅薄膜面板的多晶硅平面化解决方案公开(公告)号：US20100126961A1
公开(公告)日：2010-05-27
申请号：US12596921
申请日：2008-02-19
申请人： Sang In Kim , Seong Jin Hong
发明人： Sang In Kim , Seong Jin Hong
CPC分类号： B81C1/00611 , B81C2201/0126 , C09K13/02 , H01L21/32134 , H01L29/6675
摘要： A highly aqueous, strongly basic planarizing solution and a process for its use to reducing or essentially eliminating protrusions or projections extending generally upwardly from a generally planar surface of polysilicon film produced by Low Temperature Poly Si (LTPS) annealing a film of amorphous silicon deposited on a substrate; the process including contacting the surface of the generally planar polysilicon film with the highly aqueous, strongly basic solution for a time sufficient to selectively etch the protrusions or projections from the surface of the generally planar polysilicon film without any significant etching of the generally planar polysilicon film, said highly aqueous, strongly basic solution being a solution having a pH of 12 or higher and comprising water, at least one strong base, and at least one etch rate control agent.
摘要翻译： 高度水性，强碱性的平面化溶液和用于减少或基本上消除从通过低温多晶硅（LTPS）生产的多晶硅膜的大致平坦表面大致向上延伸的突起或突起的方法，退火沉积在非晶硅上的非晶硅膜 底物; 该方法包括使大体上平坦的多晶硅膜的表面与高水溶液，强碱性溶液接触一段时间，足以从大体上平坦的多晶硅膜的表面选择性地蚀刻突起或突起，而无需大致平坦的多晶硅膜的显着蚀刻 所述高含水强碱性溶液是pH为12或更高的溶液，其包含水，至少一种强碱和至少一种蚀刻速率控制剂。
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3.发明授权Aqueous acidic formulations for copper oxide etch residue removal and prevention of copper electrodeposition 有权用于氧化铜蚀刻残渣去除和防止铜电沉积的水性酸性配方公开(公告)号：US08481472B2
公开(公告)日：2013-07-09
申请号：US12998296
申请日：2009-10-06
申请人： Glenn Westwood , Seong Jin Hong , Sang In Kim
发明人： Glenn Westwood , Seong Jin Hong , Sang In Kim
CPC分类号： C11D11/0047 , C11D1/72 , C11D3/042 , C11D3/245 , C11D3/30 , C11D3/33 , G03F7/425 , H01L21/02063 , H01L21/02068
摘要： A highly aqueous acidic cleaning composition for copper oxide etch removal from Cu-dual damascene microelectronic structures and wherein that composition prevents or substantially eliminates copper redeposition on the Cu-dual damascene microelectronic structure.
摘要翻译： 一种用于从Cu-双镶嵌微电子结构去除铜氧化物蚀刻的高含量酸性清洁组合物，并且其中所述组合物防止或基本上消除铜重新沉积在Cu-双镶嵌微电子结构上。
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公开(公告)号：US20120162794A1
公开(公告)日：2012-06-28
申请号：US13316949
申请日：2011-12-12
申请人： Kwang Chun LEE , Young Su Jin , Seong Jin Hong , Seok Cheon Lee
发明人： Kwang Chun LEE , Young Su Jin , Seong Jin Hong , Seok Cheon Lee
IPC分类号： G02B7/09
CPC分类号： G02B13/0085 , G02B7/08 , H01L41/0906
摘要： There is provided a lens module. The lens module according to the present invention may include a lens unit including one or more lenses, each having a lens function part and a flange part forming a circumference of the lens function part; and a piezoelectric body disposed on the flange part so as to shield unnecessary light incident through the lens unit and performing autofocusing according to an application of voltage thereto.
摘要翻译： 提供了一个镜头模块。 根据本发明的透镜模块可以包括透镜单元，其包括一个或多个透镜，每个透镜具有透镜功能部分和形成透镜功能部分的圆周的凸缘部分; 以及压电体，其设置在所述凸缘部上，以屏蔽通过所述透镜单元入射的不必要的光，并根据其施加电压进行自动聚焦。
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