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公开(公告)号：US08597490B2
公开(公告)日：2013-12-03
申请号：US12937755
申请日：2008-04-14
Applicant: Rui De Oliveira , Serge Duarte Pinto
Inventor： Rui De Oliveira , Serge Duarte Pinto
CPC classification number: H01J47/02
Abstract: Methods for manufacturing a gas electron multiplier. One method comprises a step of preparing a blank sheet comprised of an insulating sheet with first and second metal layers on its surface, a first metal layer hole forming step in which the first metal layer is patterned by means of photolithography, such as to form holes through the first metal layer, an insulating sheet hole forming step, in which the holes formed in the first metal layer are extended through the insulating layer by etching from the first surface side only, and a second metal layer hole forming step, in which the holes are extended through the second metal layer. Alternatively, the second metal layer hole forming step is performed by electrochemical etching, such that the first metal layer remains unaffected during etching of the second metal layer. In another embodiment, in the second metal layer hole forming step, the first and second metal layers are etched from the outside, thereby reducing the initial thicknesses of the first and second metal layers and the second metal layer is simultaneously etched through the holes in the first metal layer and the insulating sheet, said etching being maintained until the holes extend through the second metal layer, wherein said initial average thickness of the first and second metal layers is between 6.5 μm and 25 μm, preferably between 7.5 μm and 12 μm.
Abstract translation: 制造气体电子倍增器的方法。 一种方法包括制备由其表面上具有第一和第二金属层的绝缘片组成的空白片的步骤，第一金属层孔形成步骤，其中第一金属层通过光刻法构图，以形成孔 通过第一金属层，绝缘片孔形成步骤，其中形成在第一金属层中的孔仅通过从第一表面侧的蚀刻而延伸穿过绝缘层，以及第二金属层孔形成步骤，其中 孔延伸穿过第二金属层。 或者，第二金属层孔形成步骤通过电化学蚀刻进行，使得第一金属层在蚀刻第二金属层期间保持不受影响。 在另一个实施例中，在第二金属层孔形成步骤中，从外部蚀刻第一金属层和第二金属层，从而减小第一和第二金属层的初始厚度，并且通过第二金属层中的孔同时蚀刻第二金属层 第一金属层和绝缘片，所述蚀刻保持直到孔延伸穿过第二金属层，其中第一和第二金属层的初始平均厚度在6.5μm和25μm之间，优选在7.5μm和12μm之间。
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公开(公告)号：US20110089042A1
公开(公告)日：2011-04-21
申请号：US12937755
申请日：2008-04-14
Applicant: Rui De Oliveira , Serge Duarte Pinto
Inventor： Rui De Oliveira , Serge Duarte Pinto
CPC classification number: H01J47/02
Abstract: Methods for manufacturing a gas electron multiplier. One method comprises a step of preparing a blank sheet comprised of an insulating sheet with first and second metal layers on its surface, a first metal layer hole forming step in which the first metal layer is patterned by means of photolithography, such as to form holes through the first metal layer, an insulating sheet hole forming step, in which the holes formed in the first metal layer are extended through the insulating layer by etching from the first surface side only, and a second metal layer hole forming step, in which the holes are extended through the second metal layer. Alternatively, the second metal layer hole forming step is performed by electrochemical etching, such that the first metal layer remains unaffected during etching of the second metal layer. In another embodiment, in the second metal layer hole forming step, the first and second metal layers are etched from the outside, thereby reducing the initial thicknesses of the first and second metal layers and the second metal layer is simultaneously etched through the holes in the first metal layer and the insulating sheet, said etching being maintained until the holes extend through the second metal layer, wherein said initial average thickness of the first and second metal layers is between 6.5 μm and 25 μm, preferably between 7.5 μm and 12 μm.
Abstract translation: 制造气体电子倍增器的方法。 一种方法包括制备由其表面上具有第一和第二金属层的绝缘片组成的空白片的步骤，第一金属层孔形成步骤，其中第一金属层通过光刻法构图，以形成孔 通过第一金属层，绝缘片孔形成步骤，其中形成在第一金属层中的孔仅通过从第一表面侧的蚀刻而延伸穿过绝缘层，以及第二金属层孔形成步骤，其中 孔延伸穿过第二金属层。 或者，第二金属层孔形成步骤通过电化学蚀刻进行，使得第一金属层在蚀刻第二金属层期间保持不受影响。 在另一个实施例中，在第二金属层孔形成步骤中，从外部蚀刻第一金属层和第二金属层，从而减小第一和第二金属层的初始厚度，并且通过第二金属层中的孔同时蚀刻第二金属层 第一金属层和绝缘片，所述蚀刻保持直到孔延伸穿过第二金属层，其中第一和第二金属层的初始平均厚度在6.5μm和25μm之间，优选在7.5μm和12μm之间。
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