公开(公告)号：US06391748B1

公开(公告)日：2002-05-21

申请号：US09677762

申请日：2000-10-03

申请人： Henryk Temkin ,  Sergey A. Nikishin

发明人： Henryk Temkin ,  Sergey A. Nikishin

IPC分类号： H01L2120

CPC分类号： C30B23/02 ,  C30B29/403 ,  C30B29/406 ,  H01L21/02381 ,  H01L21/02458 ,  H01L21/02488 ,  H01L21/02513 ,  H01L21/0254 ,  H01L21/02631 ,  H01L21/02658 ,  H01L33/007

摘要： Aluminum nitride, AlN, layers are grown on silicon substrates using molecular beam epitaxial (MBE) growth. The AlN layer is initially grown by subjecting the silicon substrate to background ammonia followed by repetitively alternating the flux of 1) Al without ammonia and 2) ammonia without Al. After the surface of the silicon structure is sufficiently covered with AlN, the wafer is further subjected to a flux of ammonia and aluminum applied simultaneously to continue the epitaxial growth process. The process minimizes the formation of amorphous silicon nitride, SiNx, compounds on the surface of the substrate which form due to background nitrogen levels in the molecular beam epitaxial growth apparatus. A surface free of amorphous silicon nitride is necessary for formation of high quality AlN. The AlN layer may be further used as a buffer layer for AlGaN/GaN growth. After the AlN layer is grown on the silicon structure, the silicon structure may be subjected to a flux of Ga and nitrogen to form a layer of GaN.

摘要翻译： 使用分子束外延（MBE）生长在氮化硅衬底上生长氮化铝，AlN层。 最初通过使硅衬底经历背景氨，然后重复地交替没有氨的1）Al的焊剂和2）不含Al的氨来生长AlN层。 在硅结构的表面被AlN充分覆盖之后，晶片进一步经受同时施加的氨和铝的通量，以继续外延生长过程。 该方法由于分子束外延生长装置中背景氮含量而形成的非晶氮化硅SiN x，由此形成的衬底表面上的化合物最小化。 无定形氮化硅的表面对于形成高质量的AlN是必需的。 AlN层可以进一步用作AlGaN / GaN生长的缓冲层。 在AlN层在硅结构上生长之后，硅结构可以经受Ga和氮的通量以形成GaN层。