公开(公告)号：US08648879B2

公开(公告)日：2014-02-11

申请号：US13396862

申请日：2012-02-15

申请人： Jae Wan Park ,  Seung Gyun Kim ,  Gi Seok Kwon

发明人： Jae Wan Park ,  Seung Gyun Kim ,  Gi Seok Kwon

IPC分类号： G09G5/00 ,  G06K9/00

CPC分类号： G06T19/006 ,  G06F3/0304 ,  G06F3/0346 ,  G06F3/038

摘要： Provided are an apparatus and method for tracking augmented reality content using a mobile sensor. The method includes recognizing an augmented reality marker from an input image and calculating a position and posture of the recognized augmented reality marker, calculating a position and posture of augmented reality content corresponding to the augmented reality marker using the calculated position and posture of the augmented reality marker, synthesizing the augmented reality content with the input image using the calculated position and posture of the augmented reality content, and displaying the synthesized image, updating the position and posture of the augmented reality content using a 6-axis sensor when the augmented reality marker is not recognized in the input image; and synthesizing the augmented reality content with the input image using the updated position and posture of the augmented reality content, and displaying the synthesized image.

摘要翻译： 提供了一种使用移动传感器跟踪增强现实内容的装置和方法。 该方法包括从输入图像识别增强现实标记并计算识别的增强现实标记的位置和姿势，使用所计算的增强现实的位置和姿势来计算与增强现实标记相对应的增强现实内容的位置和姿势 标记，使用计算出的增强现实内容的位置和姿势，使用输入图像合成增强现实内容，并且当增强现实标记（6）显示合成图像时，使用6轴传感器更新增强现实内容的位置和姿势 在输入图像中无法识别; 以及使用所增强的现实内容的更新的位置和姿势，与所述输入图像合成所述增强现实内容，以及显示所述合成图像。

公开(公告)号：US20120249528A1

公开(公告)日：2012-10-04

申请号：US13396862

申请日：2012-02-15

申请人： Jae Wan PARK ,  Seung Gyun KIM ,  Gi Seok KWON

发明人： Jae Wan PARK ,  Seung Gyun KIM ,  Gi Seok KWON

IPC分类号： G09G5/00 ,  G06T15/00

CPC分类号： G06T19/006 ,  G06F3/0304 ,  G06F3/0346 ,  G06F3/038

摘要： Provided are an apparatus and method for tracking augmented reality content using a mobile sensor. The method includes recognizing an augmented reality marker from an input image and calculating a position and posture of the recognized augmented reality marker, calculating a position and posture of augmented reality content corresponding to the augmented reality marker using the calculated position and posture of the augmented reality marker, synthesizing the augmented reality content with the input image using the calculated position and posture of the augmented reality content, and displaying the synthesized image, updating the position and posture of the augmented reality content using a 6-axis sensor when the augmented reality marker is not recognized in the input image; and synthesizing the augmented reality content with the input image using the updated position and posture of the augmented reality content, and displaying the synthesized image.

摘要翻译： 提供了一种使用移动传感器跟踪增强现实内容的装置和方法。 该方法包括从输入图像识别增强现实标记并计算识别的增强现实标记的位置和姿势，使用所计算的增强现实的位置和姿势来计算与增强现实标记相对应的增强现实内容的位置和姿势 标记，使用计算出的增强现实内容的位置和姿势，使用输入图像合成增强现实内容，并且当增强现实标记（6）显示合成图像时，使用6轴传感器更新增强现实内容的位置和姿势 在输入图像中无法识别; 以及使用所增强的现实内容的更新的位置和姿势，与所述输入图像合成所述增强现实内容，以及显示所述合成图像。

公开(公告)号：US20060138530A1

公开(公告)日：2006-06-29

申请号：US11357287

申请日：2006-02-16

申请人： Sung-Taeg Kang ,  Seung-Gyun Kim ,  Jung-Wook Han ,  Hyun-Khe Yoo

发明人： Sung-Taeg Kang ,  Seung-Gyun Kim ,  Jung-Wook Han ,  Hyun-Khe Yoo

IPC分类号： H01L29/792

CPC分类号： H01L21/28185 ,  G11C16/0466 ,  H01L21/28194 ,  H01L21/28202 ,  H01L21/28211 ,  H01L21/28282 ,  H01L29/4234 ,  H01L29/513 ,  H01L29/518 ,  H01L29/66833 ,  H01L29/792

摘要： A non-volatile memory cell able to be written in a first direction and read in a second direction is described. The memory cell includes one or two charge trapping regions located near either the source or the drain, or both the source and the drain. During a programming operation, electrons can be injected into the charge trapping region by hot electron injection. During an erasing operation, holes can be injected into the charge trapping region. Embodiments of the invention include a charge trapping region that is overlapped by the control gate only to an extent where the electrons that were injected during a programming operation can be erased later by injecting holes in the charge trapping region.

摘要翻译： 描述能够沿第一方向写入并沿第二方向读取的非易失性存储单元。 存储单元包括位于源极或漏极附近的一个或两个电荷捕获区域，或源极和漏极两者。 在编程操作期间，可以通过热电子注入将电子注入电荷俘获区域。 在擦除操作期间，可以将空穴注入电荷捕获区域。 本发明的实施例包括与控制栅极重叠的电荷捕获区域，只有在编程操作期间注入的电子可以通过在电荷俘获区域中注入空穴而被擦除的程度。

公开(公告)号：US07042045B2

公开(公告)日：2006-05-09

申请号：US10164943

申请日：2002-06-04

申请人： Sung-Taeg Kang ,  Seung-Gyun Kim ,  Jung-Wook Han ,  Hyun-Khe Yoo

发明人： Sung-Taeg Kang ,  Seung-Gyun Kim ,  Jung-Wook Han ,  Hyun-Khe Yoo

IPC分类号： H01L29/788

CPC分类号： H01L21/28185 ,  G11C16/0466 ,  H01L21/28194 ,  H01L21/28202 ,  H01L21/28211 ,  H01L21/28282 ,  H01L29/4234 ,  H01L29/513 ,  H01L29/518 ,  H01L29/66833 ,  H01L29/792

摘要： A non-volatile memory cell able to be written in a first direction and read in a second direction is described. The memory cell includes one or two charge trapping regions located near either the source or the drain, or both the source and the drain. During a programming operation, electrons can be injected into the charge trapping region by hot electron injection. During an erasing operation, holes can be injected into the charge trapping region. Embodiments of the invention include a charge trapping region that is overlapped by the control gate only to an extent where the electrons that were injected during a programming operation can be erased later by injecting holes in the charge trapping region.

摘要翻译： 描述能够沿第一方向写入并沿第二方向读取的非易失性存储单元。 存储单元包括位于源极或漏极附近的一个或两个电荷捕获区域，或源极和漏极两者。 在编程操作期间，可以通过热电子注入将电子注入电荷俘获区域。 在擦除操作期间，可以将空穴注入电荷捕获区域。 本发明的实施例包括与控制栅极重叠的电荷捕获区域，只有在编程操作期间注入的电子可以通过在电荷俘获区域中注入空穴而被擦除的程度。

公开(公告)号：US20080020527A1

公开(公告)日：2008-01-24

申请号：US11833132

申请日：2007-08-02

申请人： Sung-Taeg Kang ,  Seung-Gyun Kim ,  Jung-Wook Han ,  Hyun-Khe Yoo

发明人： Sung-Taeg Kang ,  Seung-Gyun Kim ,  Jung-Wook Han ,  Hyun-Khe Yoo

IPC分类号： H01L21/336

CPC分类号： H01L21/28185 ,  G11C16/0466 ,  H01L21/28194 ,  H01L21/28202 ,  H01L21/28211 ,  H01L29/40117 ,  H01L29/4234 ,  H01L29/513 ,  H01L29/518 ,  H01L29/66833 ,  H01L29/792

摘要： A non-volatile memory cell able to be written in a first direction and read in a second direction is described. The memory cell includes one or two charge trapping regions located near either the source or the drain, or both the source and the drain. During a programming operation, electrons can be injected into the charge trapping region by hot electron injection. During an erasing operation, holes can be injected into the charge trapping region. Embodiments of the invention include a charge trapping region that is overlapped by the control gate only to an extent where the electrons that were injected during a programming operation can be erased later by injecting holes in the charge trapping region.

摘要翻译： 描述能够沿第一方向写入并沿第二方向读取的非易失性存储单元。 存储单元包括位于源极或漏极附近的一个或两个电荷捕获区域，或源极和漏极两者。 在编程操作期间，可以通过热电子注入将电子注入电荷俘获区域。 在擦除操作期间，可以将空穴注入电荷捕获区域。 本发明的实施例包括与控制栅极重叠的电荷捕获区域，只有在编程操作期间注入的电子可以通过在电荷俘获区域中注入空穴而被擦除的程度。

公开(公告)号：US07265410B2

公开(公告)日：2007-09-04

申请号：US11357287

申请日：2006-02-16

申请人： Sung-Taeg Kang ,  Seung-Gyun Kim ,  Jung-Wook Han ,  Hyun-Khe Yoo

发明人： Sung-Taeg Kang ,  Seung-Gyun Kim ,  Jung-Wook Han ,  Hyun-Khe Yoo

IPC分类号： H01L29/788

CPC分类号： H01L21/28185 ,  G11C16/0466 ,  H01L21/28194 ,  H01L21/28202 ,  H01L21/28211 ,  H01L21/28282 ,  H01L29/4234 ,  H01L29/513 ,  H01L29/518 ,  H01L29/66833 ,  H01L29/792

摘要： A non-volatile memory cell able to be written in a first direction and read in a second direction is described. The memory cell includes one or two charge trapping regions located near either the source or the drain, or both the source and the drain. During a programming operation, electrons can be injected into the charge trapping region by hot electron injection. During an erasing operation, holes can be injected into the charge trapping region. Embodiments of the invention include a charge trapping region that is overlapped by the control gate only to an extent where the electrons that were injected during a programming operation can be erased later by injecting holes in the charge trapping region.

摘要翻译： 描述能够沿第一方向写入并沿第二方向读取的非易失性存储单元。 存储单元包括位于源极或漏极附近的一个或两个电荷捕获区域，或源极和漏极两者。 在编程操作期间，可以通过热电子注入将电子注入电荷俘获区域。 在擦除操作期间，可以将空穴注入电荷捕获区域。 本发明的实施例包括与控制栅极重叠的电荷捕获区域，只有在编程操作期间注入的电子可以通过在电荷俘获区域中注入空穴而被擦除的程度。