公开(公告)号：US5091332A

公开(公告)日：1992-02-25

申请号：US615445

申请日：1990-11-19

申请人： Mark T. Bohr ,  Lawrence N. Brigham, Jr. ,  Shahab Hossaini

发明人： Mark T. Bohr ,  Lawrence N. Brigham, Jr. ,  Shahab Hossaini

IPC分类号： H01L21/761 ,  H01L21/266 ,  H01L21/316 ,  H01L21/76 ,  H01L21/762 ,  H01L21/8238 ,  H01L27/08 ,  H01L27/092

CPC分类号： H01L21/76218 ,  H01L21/266 ,  H01L21/76202 ,  H01L21/823892 ,  H01L27/0928

摘要： Front end processing for a CMOS substrate resulting in the formation of n-wells, p-wells, channel stops and field oxide regions. Both the n-type and p-type dopant are implanted through silicon nitride members with one type dopant being first blocked by a first layer of photoresist and the second dopant by a second layer of photoresist. The field oxide regions are grown after the first dopant is implanted. Relatively low level ion implantation is used and additional threshold adjusting implants are not needed.

摘要翻译： 导致CMOS衬底的前端处理导致形成n阱，p阱，通道停止和场氧化物区域。 n型和p型掺杂剂都通过氮化硅构件注入，其中一种类型的掺杂剂首先被第一光致抗蚀剂层阻挡，而第二掺杂剂被第二层光致抗蚀剂阻挡。 在植入第一掺杂剂之后，生长场氧化物区域。 使用相对较低水平的离子注入，并且不需要额外的阈值调整植入物。