公开(公告)号：US11100971B2

公开(公告)日：2021-08-24

申请号：US16823410

申请日：2020-03-19

申请人： Shanghai Institute of Technical Physics of the Chinese Academy of Sciences

发明人： Jianlu Wang ,  Guangjian Wu ,  Xudong Wang ,  Hong Shen ,  Tie Lin ,  Xiangjian Meng ,  Junhao Chu

IPC分类号： G11C11/22 ,  H01L27/1159 ,  H01L21/28 ,  H01L29/51

摘要： A ferroelectric domain regulated optical readout mode memory and a preparing method thereof. The memory has such a structure that a two-dimensional semiconductor and a ferroelectric film layer are sequentially arranged on a conductive substrate. The method for preparing the memory includes the steps of preparing the two-dimensional semiconductor on the conductive substrate, preparing a ferroelectric film, then writing a periodic positive-reverse domain structure into the ferroelectric film on the two-dimensional semiconductor by using a piezoresponse force microscopy technology, and regulating a photoluminescent intensity of the two-dimensional semiconductor WS2 by using a ferroelectric domain. A fluorescent picture taken by a fluorescent camera shows light and dark areas corresponding to polarization directions, the light and dark areas represent an on state (‘1’) and an off state (‘0’) of the memory respectively, and accordingly the purpose of storage is achieved.

公开(公告)号：US20200312398A1

公开(公告)日：2020-10-01

申请号：US16823410

申请日：2020-03-19

申请人： Shanghai Institute of Technical Physics of the Chinese Academy of Sciences

发明人： Jianlu Wang ,  Guangjian Wu ,  Xudong Wang ,  Hong Shen ,  Tie Lin ,  Xiangjian Meng ,  Junhao Chu

IPC分类号： G11C11/22 ,  H01L21/28 ,  H01L29/51 ,  H01L27/1159

摘要： A ferroelectric domain regulated optical readout mode memory and a preparing method thereof. The memory has such a structure that a two-dimensional semiconductor and a ferroelectric film layer are sequentially arranged on a conductive substrate. The method for preparing the memory includes the steps of preparing the two-dimensional semiconductor on the conductive substrate, preparing a ferroelectric film, then writing a periodic positive-reverse domain structure into the ferroelectric film on the two-dimensional semiconductor by using a piezoresponse force microscopy technology, and regulating a photoluminescent intensity of the two-dimensional semiconductor WS2 by using a ferroelectric domain. A fluorescent picture taken by a fluorescent camera shows light and dark areas corresponding to polarization directions, the light and dark areas represent an on state (‘1’) and an off state (‘0’) of the memory respectively, and accordingly the purpose of storage is achieved.

公开(公告)号：US20230420594A1

公开(公告)日：2023-12-28

申请号：US17808662

申请日：2022-06-24

申请人： Shanghai Institute of Technical Physics of the Chinese Academy of Sciences

发明人： Weida HU ,  Zhen WANG ,  Yunfeng CHEN ,  Jinshui MIAO ,  Peng WANG ,  Fang ZHONG ,  Ting HE ,  Runzhang XIE ,  Fang WANG ,  Xiaoshuang CHEN ,  Wei LU

IPC分类号： H01L31/101 ,  H01L31/18 ,  H01L31/0272 ,  C23C16/30

CPC分类号： H01L31/1013 ,  C23C16/305 ,  H01L31/0272 ,  H01L31/18

摘要： The present disclosure provides a momentum-matching and band-alignment van der Waals (vdW) infrared photodetector and a fabrication method thereof. The photodetector includes a substrate, a dielectric layer, a Bi2O2Se layer, a black phosphorus (BP) layer, a metal source and a metal drain. The fabrication method includes: transferring, in a wet manner, the Bi2O2Se layer grown on the mica substrate onto the substrate having the dielectric layer, transferring the mechanically exfoliated BP layer through a micro-region fixed-point transfer device onto the Bi2O2Se layer, and separately fabricating the metal source and the metal drain on the Bi2O2Se layer and the BP layer by processes such as electron beam exposure and electron beam evaporation, thereby forming the momentum-matching and band-alignment vdW infrared photodetector having a vertical structure.

公开(公告)号：US20230049997A1

公开(公告)日：2023-02-16

申请号：US17812298

申请日：2022-07-13

申请人： Shanghai Institute of Technical Physics of the Chinese Academy of Sciences

发明人： Zhenhua JIANG ,  Yinong WU ,  Zheng HUANG ,  Wencui WU ,  Danfeng SHANG ,  Chuan CHEN ,  Xiaoping QU

IPC分类号： F16F15/023 ,  F25B9/14

摘要： A large-cooling-capacity integrated Stirling pneumatic refrigerator supported by large-stroke column springs, consisting of an active vibration absorber, a motor, a coaxial type compression-expansion piston, a compression piston column spring, an expansion piston column spring, a hot-end radiator, a cylinder wall, a housing, and a cold finger, wherein the coaxial compression-expansion piston is composed of a compression piston and an expansion piston, the expansion piston is nested in the compression piston, and the compression piston and the expansion piston share one hot-end radiator; the compression piston is driven by a motor, and the expansion piston is driven by gas force and no motor drive is required. The compression piston and the expansion piston are both supported by column springs, the column spring provides an axial restoring force for the coaxial type compression-expansion piston. The active vibration absorber is installed at the tail part of the housing.