公开(公告)号：US11100971B2

公开(公告)日：2021-08-24

申请号：US16823410

申请日：2020-03-19

申请人： Shanghai Institute of Technical Physics of the Chinese Academy of Sciences

发明人： Jianlu Wang ,  Guangjian Wu ,  Xudong Wang ,  Hong Shen ,  Tie Lin ,  Xiangjian Meng ,  Junhao Chu

IPC分类号： G11C11/22 ,  H01L27/1159 ,  H01L21/28 ,  H01L29/51

摘要： A ferroelectric domain regulated optical readout mode memory and a preparing method thereof. The memory has such a structure that a two-dimensional semiconductor and a ferroelectric film layer are sequentially arranged on a conductive substrate. The method for preparing the memory includes the steps of preparing the two-dimensional semiconductor on the conductive substrate, preparing a ferroelectric film, then writing a periodic positive-reverse domain structure into the ferroelectric film on the two-dimensional semiconductor by using a piezoresponse force microscopy technology, and regulating a photoluminescent intensity of the two-dimensional semiconductor WS2 by using a ferroelectric domain. A fluorescent picture taken by a fluorescent camera shows light and dark areas corresponding to polarization directions, the light and dark areas represent an on state (‘1’) and an off state (‘0’) of the memory respectively, and accordingly the purpose of storage is achieved.

公开(公告)号：US20200312398A1

公开(公告)日：2020-10-01

申请号：US16823410

申请日：2020-03-19

申请人： Shanghai Institute of Technical Physics of the Chinese Academy of Sciences

发明人： Jianlu Wang ,  Guangjian Wu ,  Xudong Wang ,  Hong Shen ,  Tie Lin ,  Xiangjian Meng ,  Junhao Chu

IPC分类号： G11C11/22 ,  H01L21/28 ,  H01L29/51 ,  H01L27/1159

摘要： A ferroelectric domain regulated optical readout mode memory and a preparing method thereof. The memory has such a structure that a two-dimensional semiconductor and a ferroelectric film layer are sequentially arranged on a conductive substrate. The method for preparing the memory includes the steps of preparing the two-dimensional semiconductor on the conductive substrate, preparing a ferroelectric film, then writing a periodic positive-reverse domain structure into the ferroelectric film on the two-dimensional semiconductor by using a piezoresponse force microscopy technology, and regulating a photoluminescent intensity of the two-dimensional semiconductor WS2 by using a ferroelectric domain. A fluorescent picture taken by a fluorescent camera shows light and dark areas corresponding to polarization directions, the light and dark areas represent an on state (‘1’) and an off state (‘0’) of the memory respectively, and accordingly the purpose of storage is achieved.