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    Absorber layer for thin film photovoltaics and a solar cell made therefrom
    3.
    发明授权
    Absorber layer for thin film photovoltaics and a solar cell made therefrom 失效
    用于薄膜光伏的吸收层和由其制成的太阳能电池

    公开(公告)号：US08779283B2

    公开(公告)日：2014-07-15

    申请号：US12040422

    申请日：2008-02-29

    Applicant: Sheela Kollali Ramasesha ,  Sundeep Kumar ,  Mohandas Nayak ,  Atanu Saha ,  Hemantkumar Narsinham Aiyer

    Inventor： Sheela Kollali Ramasesha ,  Sundeep Kumar ,  Mohandas Nayak ,  Atanu Saha ,  Hemantkumar Narsinham Aiyer

    IPC: H01L31/00

    CPC classification number: H01L31/0322 ,  H01L21/02551 ,  H01L21/02568 ,  H01L21/02614 ,  H01L31/0749 ,  H01L31/18 ,  Y02E10/541 ,  Y02P70/521

    Abstract: A method, in certain embodiments, includes providing a metal alloy, annealing the metal alloy, and contacting the metal alloy with vapors of selenium, or sulfur, or a combination thereof. The metal alloy having a uniform first bulk composition and a first surface composition on annealing provides an annealed metal alloy having a non uniform second bulk composition and a second surface composition which on being contacted vapors of selenium, or sulfur, or a combination thereof, produces a selenized or a sulfurized metal alloy. Further the metal alloy may have a layer formed in situ from a low melting point metal within the alloy via diffusion rather than sequential deposition and co-evaporation.

    Abstract translation: 在某些实施方案中，一种方法包括提供金属合金，退火金属合金，以及使金属合金与硒或硫的蒸气或其组合接触。 具有均匀的第一本体组合物的金属合金和退火时的第一表面组合物提供了具有非均匀的第二本体组合物的退火金属合金和第二表面组合物，所述第二表面组合物在与硒或硫的蒸气或其组合相接触时产生 硒化或硫化金属合金。 此外，金属合金可以具有通过扩散从合金中的低熔点金属原位形成的层，而不是顺序沉积和共蒸发。

    LOW BAND GAP SEMICONDUCTOR OXIDES, PROCESSES FOR MAKING THE SAME, AND DYE SENSITIZED SOLAR CELLS CONTAINING THE SAME
    5.
    发明申请
    LOW BAND GAP SEMICONDUCTOR OXIDES, PROCESSES FOR MAKING THE SAME, AND DYE SENSITIZED SOLAR CELLS CONTAINING THE SAME 审中-公开
    低带隙半导体氧化物，其制造方法以及含有其的透明的太阳能电池

    公开(公告)号：US20090194149A1

    公开(公告)日：2009-08-06

    申请号：US12025209

    申请日：2008-02-04

    Applicant: Nagaveni Karkada ,  Sheela Kollali Ramasesha

    Inventor： Nagaveni Karkada ,  Sheela Kollali Ramasesha

    IPC: H01L31/00 ,  H01L21/00

    CPC classification number: H01L51/002 ,  H01G9/2031 ,  Y02E10/542 ,  Y02E10/549

    Abstract: Low band gap semiconductor oxides include nanocrystalline porous particles doped with an anion selected from the group consisting of carbon, nitrogen, fluorine, and combinations thereof, wherein the doped nanocrystalline porous semiconductor oxide has a lower band gap energy relative to undoped semiconductor oxides. A combustion synthesis process is used to fabricate the low bang gap materials. Also disclosed herein are dye sensitized solar cells containing the doped semiconductor oxides.

    Abstract translation: 低带隙半导体氧化物包括掺杂有选自碳，氮，氟及其组合的阴离子的纳米晶体多孔颗粒，其中掺杂的纳米晶体多孔半导体氧化物相对于未掺杂的半导体氧化物具有较低的带隙能量。 燃烧合成过程用于制造低爆隙材料。 本文还公开了含有掺杂半导体氧化物的染料敏化太阳能电池。

    Composition, coating, coated article, and method
    8.
    发明申请
    Composition, coating, coated article, and method 审中-公开
    组合物，涂层，涂层制品和方法

    公开(公告)号：US20070221132A1

    公开(公告)日：2007-09-27

    申请号：US11604534

    申请日：2006-11-27

    Applicant: Ramachandran Gopi Chandran ,  Balasubramaniam Vaidhyanathan ,  Venkat Subramaniam Venkataramani ,  Victor Lienkong Lou ,  George Theodore Dalakos ,  Sheela Kollali Ramasesha

    Inventor： Ramachandran Gopi Chandran ,  Balasubramaniam Vaidhyanathan ,  Venkat Subramaniam Venkataramani ,  Victor Lienkong Lou ,  George Theodore Dalakos ,  Sheela Kollali Ramasesha

    IPC: H01L21/306 ,  C23C16/00

    CPC classification number: C23C16/4581 ,  C23C18/00

    Abstract: A processing apparatus for use in a corrosive operating environment at a temperature range of 25-1500° C. is provided. The apparatus has an NZP or an NZP-type coating, which comprises a first composition, a second composition, and a metal cation. The first composition and the second composition form a crystalline structure with three-dimensional network of octahedra and tetrahedra linked by one or more shared atoms. The first composition comprises one or more of Zr, V, Ta, Nb, Hf, Ti, Al, Cr, or a metal of the Lanthanide series. The second composition comprises at least one of phosphorus, silicon, boron, vanadium or aluminum. The one or more shared atoms comprise at least one of oxygen, nitrogen, or carbon. The first composition and the second composition are related as shown by the formula (first composition)2 (second composition)x (shared atom)12-x. The metal cation is disposed within an interstitial site defined by the crystalline structure.

    Abstract translation: 提供一种用于在25-1500℃的温度范围内的腐蚀性操作环境中的加工设备。 该装置具有NZP或NZP型涂层，其包含第一组合物，第二组合物和金属阳离子。 第一组合物和第二组合物形成具有由一个或多个共有原子连接的八面体和四面体的三维网络的晶体结构。 第一组合物包含Zr，V，Ta，Nb，Hf，Ti，Al，Cr或镧系金属的一种或多种。 第二组合物包含磷，硅，硼，钒或铝中的至少一种。 一个或多个共有原子包含氧，氮或碳中的至少一个。 第一组合物和第二组合物如式（第一组合物）2所示相关（第二组合物）x（共享原子）12-x < SUB>。 金属阳离子设置在由晶体结构限定的间隙位置内。

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