公开(公告)号：US10763179B2

公开(公告)日：2020-09-01

申请号：US15055062

申请日：2016-02-26

Applicant: SEMILAB Semiconductor Physics Laboratory Co., Ltd. ,  Sung-Li Wang ,  Lin-Jung Wu ,  Shyh-Shin Ferng ,  Yi-Hung Lin ,  Sheng-Shin Lin

Inventor： Dmitriy Marinskiy ,  Thye Chong Loy ,  Jacek Lagowski ,  Sung-Li Wang ,  Lin-Jung Wu ,  Shyh-Shin Ferng ,  Yi-Hung Lin ,  Sheng-Shin Lin

IPC: G01R31/02 ,  G01R31/26 ,  H01L21/66 ,  G01R31/265 ,  G01R31/28 ,  G01N17/00

Abstract: An example semiconductor wafer includes a semiconductor layer, a dielectric layer disposed on the semiconductor layer, and a layer of the metal disposed on the dielectric layer. An example method of determining an effective work function of a metal on the semiconductor wafer includes determining a surface barrier voltage of the semiconductor wafer, and determining a metal effective work function of the semiconductor wafer based, at least in part, on the surface barrier voltage.

公开(公告)号：US20160252565A1

公开(公告)日：2016-09-01

申请号：US15055062

申请日：2016-02-26

Applicant: Sung-Li Wang ,  Lin-Jung WU ,  Shyh-Shin Ferng ,  Yi-Hung Lin ,  Sheng-Shin Lin ,  Semilab SDI LLC

Inventor： Dmitriy Marinskiy ,  Thye Chong Loy ,  Jacek Lagowski ,  Sung-Li Wang ,  Lin-Jung Wu ,  Shyh-Shin Ferng ,  Yi-Hung Lin ,  Sheng-Shin Lin

IPC: G01R31/26 ,  H01L21/66

Abstract: An example semiconductor wafer includes a semiconductor layer, a dielectric layer disposed on the semiconductor layer, and a layer of the metal disposed on the dielectric layer. An example method of determining an effective work function of a metal on the semiconductor wafer includes determining a surface barrier voltage of the semiconductor wafer, and determining a metal effective work function of the semiconductor wafer based, at least in part, on the surface barrier voltage.

Abstract translation: 示例性半导体晶片包括半导体层，设置在半导体层上的电介质层和设置在电介质层上的金属层。 确定半导体晶片上的金属的有效功函数的示例性方法包括确定半导体晶片的表面势垒电压，以及至少部分地基于表面势垒电压确定半导体晶片的金属有效功函数 。