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1.发明申请NON-CONTACT METHOD TO MONITOR AND QUANTIFY EFFECTIVE WORK FUNCTION OF METALS 审中-公开非接触式方法监测和量化金属的有效工作功能公开(公告)号：US20160252565A1
公开(公告)日：2016-09-01
申请号：US15055062
申请日：2016-02-26
申请人： Sung-Li Wang , Lin-Jung WU , Shyh-Shin Ferng , Yi-Hung Lin , Sheng-Shin Lin , Semilab SDI LLC
发明人： Dmitriy Marinskiy , Thye Chong Loy , Jacek Lagowski , Sung-Li Wang , Lin-Jung Wu , Shyh-Shin Ferng , Yi-Hung Lin , Sheng-Shin Lin
摘要： An example semiconductor wafer includes a semiconductor layer, a dielectric layer disposed on the semiconductor layer, and a layer of the metal disposed on the dielectric layer. An example method of determining an effective work function of a metal on the semiconductor wafer includes determining a surface barrier voltage of the semiconductor wafer, and determining a metal effective work function of the semiconductor wafer based, at least in part, on the surface barrier voltage.
摘要翻译： 示例性半导体晶片包括半导体层，设置在半导体层上的电介质层和设置在电介质层上的金属层。 确定半导体晶片上的金属的有效功函数的示例性方法包括确定半导体晶片的表面势垒电压，以及至少部分地基于表面势垒电压确定半导体晶片的金属有效功函数 。
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公开(公告)号：US10763179B2
公开(公告)日：2020-09-01
申请号：US15055062
申请日：2016-02-26
申请人： SEMILAB Semiconductor Physics Laboratory Co., Ltd. , Sung-Li Wang , Lin-Jung Wu , Shyh-Shin Ferng , Yi-Hung Lin , Sheng-Shin Lin
发明人： Dmitriy Marinskiy , Thye Chong Loy , Jacek Lagowski , Sung-Li Wang , Lin-Jung Wu , Shyh-Shin Ferng , Yi-Hung Lin , Sheng-Shin Lin
摘要： An example semiconductor wafer includes a semiconductor layer, a dielectric layer disposed on the semiconductor layer, and a layer of the metal disposed on the dielectric layer. An example method of determining an effective work function of a metal on the semiconductor wafer includes determining a surface barrier voltage of the semiconductor wafer, and determining a metal effective work function of the semiconductor wafer based, at least in part, on the surface barrier voltage.
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3.发明申请METHOD FOR MANUFACTURING GALLIUM NITRIDE BASED TRANSPARENT CONDUCTIVE OXIDIZED FILM OHMIC ELECTRODES 有权用于制造基于氮化镓的透明导电氧化膜电极的方法公开(公告)号：US20060014368A1
公开(公告)日：2006-01-19
申请号：US10892180
申请日：2004-07-16
申请人： Lung-Han Peng , Han-Ming Wu , Sung-Li Wang , Chia-Wei Chang , Chin-Yi Lin
发明人： Lung-Han Peng , Han-Ming Wu , Sung-Li Wang , Chia-Wei Chang , Chin-Yi Lin
IPC分类号： H01L21/28
摘要： A method for manufacturing gallium nitride based transparent conductive oxidized film ohmic electrodes includes forming a transparent conductive film on a GaN layer, forming a transparent conductive hetero-junction of opposing electrical characteristics on a transparent conductive film on the surface of the GaN layer through an ion diffusion process, and laying a metallic thick film on the surface of the transparent conductive hetero-junction for wiring process in the later fabrication operation. Thus through the electron and hole tunneling effect in the ion diffusion process the Fermi level of the hetero-junction may be improved to form an ohmic contact electrode.
摘要翻译： 一种制造氮化镓基透明导电氧化膜欧姆电极的方法包括在GaN层上形成透明导电膜，通过离子在GaN层的表面上的透明导电膜上形成具有相反电特性的透明导电异质结 扩散工艺，并在后续制造操作中在布线工艺的透明导电异质结表面上铺设金属厚膜。 因此，通过离子扩散过程中的电子和空穴隧穿效应，可以改善异质结的费米能级以形成欧姆接触电极。
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4.发明授权Phase-change material, memory unit and method for electrically storing/reading data 有权相变材料，存储单元和用于电存储/读取数据的方法公开(公告)号：US07884345B2
公开(公告)日：2011-02-08
申请号：US12182644
申请日：2008-07-30
申请人： Lung-Han Peng , Sung-Li Wang , Meng-Kuei Hsieh , Chien-Yu Chen
发明人： Lung-Han Peng , Sung-Li Wang , Meng-Kuei Hsieh , Chien-Yu Chen
IPC分类号： H01L29/04
CPC分类号： C23C14/0676 , H01L45/06 , H01L45/1233 , H01L45/126 , H01L45/145 , H01L45/1625 , Y10S438/90
摘要： A phase-change material and a memory unit using the phase-change material are provided. The phase-change material is in a single crystalline state and includes a compound of a metal oxide or nitroxide, wherein the metal is at least one selected from a group consisting of indium, gallium and germanium. The memory unit includes a substrate; at least a first contact electrode formed on the substrate; a dielectric layer disposed on the substrate and formed with an opening for a layer of the phase-change material to be formed therein; and at least a second contact electrode disposed on the dielectric layer. As the phase-change material is in a single crystalline state and of a great discrepancy between high and low resistance states, the memory unit using the phase-changed material can achieve a phase-change characteristic rapidly by pulse voltage and avert any incomplete reset while with a low critical power.
摘要翻译： 提供了相变材料和使用该相变材料的存储单元。 相变材料为单晶状态，包括金属氧化物或氮氧化物的化合物，其中金属为选自铟，镓和锗的至少一种。 存储单元包括基板; 至少形成在所述基板上的第一接触电极; 介电层，其设置在所述基板上，并且形成有用于要形成在其中的所述相变材料层的开口; 以及设置在电介质层上的至少第二接触电极。 由于相变材料处于单晶状态，在高电阻状态和低电阻状态之间存在很大的差异，所以使用相变材料的存储器单元可以通过脉冲电压快速获得相变特性，并避免任何不完全复位 具有低临界功率。
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5.发明申请PHASE-CHANGE MATERIAL, MEMORY UNIT AND METHOD FOR ELECTRICALLY STORING/READING DATA 有权相变材料，存储单元和电存储/读取数据的方法公开(公告)号：US20090185412A1
公开(公告)日：2009-07-23
申请号：US12182644
申请日：2008-07-30
申请人： Lung-Han Peng , Sung-Li Wang , Meng-Kuei Hsieh , Chien-Yu Chen
发明人： Lung-Han Peng , Sung-Li Wang , Meng-Kuei Hsieh , Chien-Yu Chen
CPC分类号： C23C14/0676 , H01L45/06 , H01L45/1233 , H01L45/126 , H01L45/145 , H01L45/1625 , Y10S438/90
摘要： A phase-change material and a memory unit using the phase-change material are provided. The phase-change material is in a single crystalline state and includes a compound of a metal oxide or nitroxide, wherein the metal is at least one selected from a group consisting of indium, gallium and germanium. The memory unit includes a substrate; at least a first contact electrode formed on the substrate; a dielectric layer disposed on the substrate and formed with an opening for a layer of the phase-change material to be formed therein; and at least a second contact electrode disposed on the dielectric layer. As the phase-change material is in a single crystalline state and of a great discrepancy between high and low resistance states, the memory unit using the phase-changed material can achieve a phase-change characteristic rapidly by pulse voltage and avert any incomplete reset while with a low critical power.
摘要翻译： 提供了相变材料和使用该相变材料的存储单元。 相变材料为单晶状态，包括金属氧化物或氮氧化物的化合物，其中金属为选自铟，镓和锗的至少一种。 存储单元包括基板; 至少形成在所述基板上的第一接触电极; 介电层，其设置在所述基板上，并且形成有用于要形成在其中的所述相变材料层的开口; 以及设置在电介质层上的至少第二接触电极。 由于相变材料处于单晶状态，在高电阻状态和低电阻状态之间存在很大的差异，所以使用相变材料的存储器单元可以通过脉冲电压快速获得相变特性，并避免任何不完全复位 具有低临界功率。
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6.发明授权公开(公告)号：US07022597B2
公开(公告)日：2006-04-04
申请号：US10892180
申请日：2004-07-16
申请人： Lung-Han Peng , Han-Ming Wu , Sung-Li Wang , Chia-Wei Chang , Chin-Yi Lin
发明人： Lung-Han Peng , Han-Ming Wu , Sung-Li Wang , Chia-Wei Chang , Chin-Yi Lin
IPC分类号： H01L21/44
摘要： A method for manufacturing gallium nitride based transparent conductive oxidized film ohmic electrodes includes forming a transparent conductive film on a GaN layer, forming a transparent conductive hetero-junction of opposing electrical characteristics on a transparent conductive film on the surface of the GaN layer through an ion diffusion process, and laying a metallic thick film on the surface of the transparent conductive hetero-junction for wiring process in the later fabrication operation. Thus through the electron and hole tunneling effect in the ion diffusion process the Fermi level of the hetero-junction may be improved to form an ohmic contact electrode.
摘要翻译： 一种制造氮化镓基透明导电氧化膜欧姆电极的方法包括在GaN层上形成透明导电膜，通过离子在GaN层的表面上的透明导电膜上形成具有相反电特性的透明导电异质结 扩散工艺，并在后续制造操作中在布线工艺的透明导电异质结表面上铺设金属厚膜。 因此，通过离子扩散过程中的电子和空穴隧穿效应，可以改善异质结的费米能级以形成欧姆接触电极。
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