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公开(公告)号:US10954608B2
公开(公告)日:2021-03-23
申请号:US16185830
申请日:2018-11-09
申请人: Robert T. Bondokov , Jianfeng Chen , Keisuke Yamaoka , Shichao Wang , Shailaja P. Rao , Takashi Suzuki , Leo J. Schowalter
发明人: Robert T. Bondokov , Jianfeng Chen , Keisuke Yamaoka , Shichao Wang , Shailaja P. Rao , Takashi Suzuki , Leo J. Schowalter
摘要: In various embodiments, single-crystal aluminum nitride boules and substrates having high transparency to ultraviolet light and low defect density are formed. The single-crystal aluminum nitride may function as a platform for the fabrication of light-emitting devices such as light-emitting diodes and lasers.
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公开(公告)号:US20190153618A1
公开(公告)日:2019-05-23
申请号:US16185830
申请日:2018-11-09
申请人: Robert T. BONDOKOV , Jianfeng CHEN , Keisuke YAMAOKA , Shichao WANG , Shailaja P. RAO , Takashi SUZUKI , Leo J. SCHOWALTER
发明人: Robert T. BONDOKOV , Jianfeng CHEN , Keisuke YAMAOKA , Shichao WANG , Shailaja P. RAO , Takashi SUZUKI , Leo J. SCHOWALTER
摘要: In various embodiments, single-crystal aluminum nitride boules and substrates having high transparency to ultraviolet light and low defect density are formed. The single-crystal aluminum nitride may function as a platform for the fabrication of light-emitting devices such as light-emitting diodes and lasers.
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公开(公告)号:US11555256B2
公开(公告)日:2023-01-17
申请号:US16444147
申请日:2019-06-18
申请人: Robert T. Bondokov , James R. Grandusky , Jianfeng Chen , Shichao Wang , Toru Kimura , Thomas Miebach , Keisuke Yamaoka , Leo J. Schowalter
发明人: Robert T. Bondokov , James R. Grandusky , Jianfeng Chen , Shichao Wang , Toru Kimura , Thomas Miebach , Keisuke Yamaoka , Leo J. Schowalter
IPC分类号: C30B29/40 , H01L33/32 , C30B23/06 , C30B33/02 , C01B21/072
摘要: In various embodiments, single-crystal aluminum nitride boules and substrates have low Urbach energies and/or absorption coefficients at deep-ultraviolet wavelengths. The single-crystal aluminum nitride may function as a platform for the fabrication of light-emitting devices such as light-emitting diodes and lasers.
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公开(公告)号:US20210254240A1
公开(公告)日:2021-08-19
申请号:US17181138
申请日:2021-02-22
申请人: Robert T. BONDOKOV , Jianfeng CHEN , Keisuke YAMAOKA , Shichao WANG , Shailaja P. RAO , Takashi SUZUKI , Leo J. SCHOWALTER
发明人: Robert T. BONDOKOV , Jianfeng CHEN , Keisuke YAMAOKA , Shichao WANG , Shailaja P. RAO , Takashi SUZUKI , Leo J. SCHOWALTER
摘要: In various embodiments, single-crystal aluminum nitride boules and substrates having high transparency to ultraviolet light and low defect density are formed. The single-crystal aluminum nitride may function as a platform for the fabrication of light-emitting devices such as light-emitting diodes and lasers.
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公开(公告)号:US20210108336A1
公开(公告)日:2021-04-15
申请号:US17082611
申请日:2020-10-28
申请人: Robert T. BONDOKOV , Jianfeng CHEN , Keisuke YAMAOKA , Shichao WANG , Shailaja P. RAO , Takashi SUZUKI , Leo J. SCHOWALTER
发明人: Robert T. BONDOKOV , Jianfeng CHEN , Keisuke YAMAOKA , Shichao WANG , Shailaja P. RAO , Takashi SUZUKI , Leo J. SCHOWALTER
摘要: In various embodiments, controlled heating and/or cooling conditions are utilized during the fabrication of aluminum nitride single crystals and aluminum nitride bulk polycrystalline ceramics. Thermal treatments may also be utilized to control properties of aluminum nitride crystals after fabrication.
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公开(公告)号:US11578425B2
公开(公告)日:2023-02-14
申请号:US17082611
申请日:2020-10-28
申请人: Robert T. Bondokov , Jianfeng Chen , Keisuke Yamaoka , Shichao Wang , Shailaja P. Rao , Takashi Suzuki , Leo J. Schowalter
发明人: Robert T. Bondokov , Jianfeng Chen , Keisuke Yamaoka , Shichao Wang , Shailaja P. Rao , Takashi Suzuki , Leo J. Schowalter
IPC分类号: H01L21/00 , C30B29/40 , C30B23/06 , H01L33/00 , C01B21/072 , C30B23/00 , H01S5/30 , H01S5/343 , H01S5/02 , H01L21/02
摘要: In various embodiments, controlled heating and/or cooling conditions are utilized during the fabrication of aluminum nitride single crystals and aluminum nitride bulk polycrystalline ceramics. Thermal treatments may also be utilized to control properties of aluminum nitride crystals after fabrication.
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公开(公告)号:US20190145020A1
公开(公告)日:2019-05-16
申请号:US16185832
申请日:2018-11-09
申请人: Robert T. BONDOKOV , Jianfeng CHEN , Keisuke YAMAOKA , Shichao WANG , Shailaja P. RAO , Takashi SUZUKI , Leo J. SCHOWALTER
发明人: Robert T. BONDOKOV , Jianfeng CHEN , Keisuke YAMAOKA , Shichao WANG , Shailaja P. RAO , Takashi SUZUKI , Leo J. SCHOWALTER
摘要: In various embodiments, controlled heating and/or cooling conditions are utilized during the fabrication of aluminum nitride single crystals and aluminum nitride bulk polycrystalline ceramics. Thermal treatments may also be utilized to control properties of aluminum nitride crystals after fabrication.
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公开(公告)号:US20220074072A1
公开(公告)日:2022-03-10
申请号:US17496867
申请日:2021-10-08
申请人: Robert T. BONDOKOV , James R. GRANDUSKY , Jianfeng CHEN , Shichao WANG , Toru KIMURA , Thomas MIEBACH , Keisuke YAMAOKA , Leo J. SCHOWALTER
发明人: Robert T. BONDOKOV , James R. GRANDUSKY , Jianfeng CHEN , Shichao WANG , Toru KIMURA , Thomas MIEBACH , Keisuke YAMAOKA , Leo J. SCHOWALTER
摘要: In various embodiments, single-crystal aluminum nitride boules and substrates are formed from the vapor phase with controlled levels of impurities such as carbon. Single-crystal aluminum nitride may be heat treated via quasi-isothermal annealing and controlled cooling to improve its ultraviolet absorption coefficient and/or Urbach energy.
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公开(公告)号:US11168411B2
公开(公告)日:2021-11-09
申请号:US16444148
申请日:2019-06-18
申请人: Robert T. Bondokov , James R. Grandusky , Jianfeng Chen , Shichao Wang , Toru Kimura , Thomas Miebach , Keisuke Yamaoka , Leo J. Schowalter
发明人: Robert T. Bondokov , James R. Grandusky , Jianfeng Chen , Shichao Wang , Toru Kimura , Thomas Miebach , Keisuke Yamaoka , Leo J. Schowalter
IPC分类号: C30B33/02 , C30B29/40 , H01L33/32 , C30B23/06 , C01B21/072
摘要: In various embodiments, single-crystal aluminum nitride boules and substrates are formed from the vapor phase with controlled levels of impurities such as carbon. Single-crystal aluminum nitride may be heat treated via quasi-isothermal annealing and controlled cooling to improve its ultraviolet absorption coefficient and/or Urbach energy.
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公开(公告)号:US10851474B2
公开(公告)日:2020-12-01
申请号:US16714939
申请日:2019-12-16
申请人: Robert T. Bondokov , Jianfeng Chen , Keisuke Yamaoka , Shichao Wang , Shailaja P. Rao , Takashi Suzuki , Leo J. Schowalter
发明人: Robert T. Bondokov , Jianfeng Chen , Keisuke Yamaoka , Shichao Wang , Shailaja P. Rao , Takashi Suzuki , Leo J. Schowalter
IPC分类号: H01L21/00 , C30B29/40 , C30B23/06 , H01L33/00 , C30B23/00 , H01S5/30 , H01S5/343 , H01S5/02 , H01L21/02
摘要: In various embodiments, controlled heating and/or cooling conditions are utilized during the fabrication of aluminum nitride single crystals and aluminum nitride bulk polycrystalline ceramics. Thermal treatments may also be utilized to control properties of aluminum nitride crystals after fabrication.
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