摘要:
The Mott transistor capable of operating at a room temperature can be realized by using a self-organized nanoparticle array for the channel portion. The nanoparticle used in the present invention comprises metal and organic molecules, and the size thereof is extremely small, that is, about a few nm. Therefore, the charging energy is sufficiently larger than the thermal energy kBT=26 meV, and the transistor can operate at a room temperature. Also, since the nanoparticles with a diameter of a few nm are arranged in a self-organized manner and the Mott transition can be caused by the change of a number of electrons of the surface density of about 1012 cm−2, the transistor can operate by the gate voltage of about several V.
摘要翻译:能够在室温下操作的莫特晶体管可以通过使用用于沟道部分的自组织纳米颗粒阵列来实现。 本发明中使用的纳米颗粒包含金属和有机分子,其尺寸非常小,即约几nm。 因此,充电能量足够大于热能k B = 26meV,并且晶体管可以在室温下工作。 此外,由于直径为几nm的纳米颗粒以自组织的方式排列,并且Mott转变可以由表面密度约为10〜12的电子数量的变化引起, cm 2,晶体管可以通过约几V的栅极电压工作。
摘要:
A desired number of cables are drawn, along with the falling charge, into a blast furnace from its top and the forward ends of the cables are melted upon reaching the melting zone in the furnace. The length of each of the cables to its melted end is measured in accordance with the result of a voltage pulse response measurement utilizing the distributed constant circuit characteristics of the cable, and the height level of the melting zone inside the furnace is measured from the cable length by correcting it for the amount of deflection of the cable within the furnace. By measuring the cable length at each of a plurality of radial locations of the furnace, it is possible to estimate the three-dimensional shape of the upper boundary of the melting zone with a high degree of accuracy.