公开(公告)号：US06515837B1

公开(公告)日：2003-02-04

申请号：US09662643

申请日：2000-09-15

Applicant: Yoshihiro Hamakawa ,  Shiroyasu Odai ,  Katsumi Hoshino

Inventor： Yoshihiro Hamakawa ,  Shiroyasu Odai ,  Katsumi Hoshino

IPC: G11B539

CPC classification number: G11B5/3903 ,  G11B5/3109 ,  G11B5/3133 ,  G11B5/3146

Abstract: There is provided a magnetoresistive head which is capable of suppressing the fluctuation of read output while ensuring a sufficient dielectric breakdown voltage of the shielding portions by constituting the shielding portions with a Co-based material. Namely, the lower shield film is formed of a 2-ply composite film wherein the film (12′) of the lower shield film which is disposed contacting with the lower gap insulation film (13) is constituted by an amorphous soft magnetic film, while the film (12) which is disposed away from the lower gap insulation film is constituted by a crystalline soft magnetic film, thereby making it possible to suppress the fluctuation of read output even if the gap is narrowed without deteriorating the yield relative to the dielectric breakdown.

Abstract translation: 提供了一种磁阻头，其能够通过用Co基材料构成屏蔽部分来确保屏蔽部分的足够的介电击穿电压，从而抑制读取输出的波动。 也就是说，下屏蔽膜由2层复合膜形成，其中下屏蔽膜的与下间隙绝缘膜（13）接触的膜（12'）由非晶软磁膜构成，而 离开下间隔绝缘膜设置的膜（12）由结晶软磁膜构成，从而即使间隙变窄而不会使相对于介质击穿的屈服劣化也可以抑制读取输出的波动 。

公开(公告)号：US06404604B2

公开(公告)日：2002-06-11

申请号：US09819811

申请日：2001-03-29

Applicant: Shiroyasu Odai ,  Matahiro Komuro

Inventor： Shiroyasu Odai ,  Matahiro Komuro

IPC: G11B539

CPC classification number: B82Y25/00 ,  B82Y10/00 ,  G11B5/3133 ,  G11B5/3903 ,  G11B5/40 ,  G11B2005/3996 ,  Y10T29/49048

Abstract: In a magneto-resistive effect type head having provided between a lower shield layer and an upper shield layer an MR sensor with a magneto-resistive effect or a gigantic magneto-resistive effect; electrode layers electrically connected to the MR sensor; and lower and upper insulating layers magnetically and electrically isolating the MR sensor and the electrode layer from the shield layers, when the gap length is reduced and the lower and upper insulating layers are decreased in thickness, the insulating layers are more liable to a dielectric breakdown by static electricity produced in the manufacturing process of the magnetic head. In a magneto-resistive effect head, the portion of the insulating layer in which the MR sensor 30 and the lower or upper shield layer 10 or 60 do not face each other (in other words, the second lower insulating layer 22 or the second upper insulating layer 52) is formed by a lower-resistivity insulating film than the other portion of the insulating layer in which the MR sensor and the layers 10 or 60 face each other (in other words, the first lower insulating layer 21 or the first upper insulating layer 51). If electric charge accumulates in the electrode layer or shield layer by static electricity, a minute current flows through the low-resistivity insulating film, reducing a potential difference between the electrode layer and the shield layer and therefore the insulating layers can be prevented from breaking by static electricity.

Abstract translation: 在具有下屏蔽层和上屏蔽层之间的具有磁阻效应或巨大磁阻效应的MR传感器的磁阻效应型磁头中， 电连接到MR传感器的电极层; 并且下绝缘层和上绝缘层将MR传感器和电极层与屏蔽层电磁隔离，当间隙长度减小并且下绝缘层和上绝缘层的厚度减小时，绝缘层更容易发生介电击穿 通过在磁头的制造过程中产生的静电。 在磁阻效应头中，MR传感器30和下或上屏蔽层10或60不面对的绝缘层的部分（换句话说，第二下绝缘层22或第二上层 绝缘层52）通过比MR传感器和层10或60彼此面对的绝缘层的另一部分（换句话说，第一下绝缘层21或第一上层 绝缘层51）。 如果电荷通过静电积累在电极层或屏蔽层中，则微小电流流过低电阻绝缘膜，减小了电极层与屏蔽层之间的电位差，因此可以防止绝缘层破裂 静电。

公开(公告)号：US06219206B1

公开(公告)日：2001-04-17

申请号：US09383214

申请日：1999-08-26

Applicant: Shiroyasu Odai ,  Matahiro Komuro

Inventor： Shiroyasu Odai ,  Matahiro Komuro

IPC: G11B539

CPC classification number: B82Y25/00 ,  B82Y10/00 ,  G11B5/3133 ,  G11B5/3903 ,  G11B5/40 ,  G11B2005/3996 ,  Y10T29/49048

Abstract: In a magneto-resistive effect type head having provided between a lower shield layer and an upper shield layer an MR sensor with a magneto-resistive effect or a gigantic magneto-resistive effect; electrode layers electrically connected to the MR sensor; and lower and upper insulating layers mangetically and electrically isolating the MR sensor and the electrode layer from the shield layers, when the gap length is reduced and the lower and upper insulating layers are decreased in thickness, the insulating layers are more liable to a dielectric breakdown by static electricity produced in the manufacturing process of the magnetic head. In a magneto-resistive effect head, the portion of the insulating layer in which the MR sensor 30 and the lower or upper shield layer 10 or 60 do not face each other (in other words, the second lower insulating layer 22 or the second upper insulating layer 52) is formed by a lower-resistivity insulating film than the other portion of the insulating layer in which the MR sensor and the layers 10 or 60 face each other (in other words, the first lower insulating layer 21 or the first upper insulating layer 51). If electric charge accumulates in the electrode layer or shield layer by static electricity, a minute current flows through the low-resistivity insulating film, reducing a potential difference between the electrode layer and the shield layer and therefore the insulating layers can be prevented from breaking by static electricity.

Abstract translation: 在具有下屏蔽层和上屏蔽层之间的具有磁阻效应或巨大磁阻效应的MR传感器的磁阻效应型磁头中， 电连接到MR传感器的电极层; 并且下绝缘层和上绝缘层将MR传感器和电极层与屏蔽层电气隔离，当间隙长度减小并且下绝缘层和上绝缘层的厚度减小时，绝缘层更容易受到介电击穿 通过在磁头的制造过程中产生的静电。 在磁阻效应头中，MR传感器30和下或上屏蔽层10或60不面对的绝缘层的部分（换句话说，第二下绝缘层22或第二上层 绝缘层52）通过比MR传感器和层10或60彼此面对的绝缘层的另一部分（换句话说，第一下绝缘层21或第一上层 绝缘层51）。 如果电荷通过静电积累在电极层或屏蔽层中，则微小电流流过低电阻绝缘膜，减小了电极层与屏蔽层之间的电位差，因此可以防止绝缘层破裂 静电。